AON6590A [AOS]
Power Field-Effect Transistor,;
| 型号： | AON6590A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：598K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6590A
40V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
40V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100A
• Low Gate Charge
• Optimized for fast-switching applications
• RoHS and Halogen-Free Compliant
< 0.99mΩ
< 1.5mΩ
Applications
100% UIS Tested
100% Rg Tested
• Synchronous Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial
D
DFN5x6
Top View
Top View
Bottom View
1
8
2
3
4
7
6
5
G
PIN1
S
PIN1
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AON6590A
DFN 5x6
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
40
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
100
100
400
67
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
ID
TC=100°C
A
IDM
TA=25°C
TA=70°C
Continuous Drain
Current
IDSM
A
54
Avalanche Current C
Avalanche energy
VDS Spike
IAS
65
A
mJ
V
C
L=0.3mH
10µs
EAS
634
48
VSPIKE
TC=25°C
TC=100°C
TA=25°C
TA=70°C
208
83
PD
W
Power Dissipation B
7.3
PDSM
W
Power Dissipation A
4.7
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
14
Max
17
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
40
50
RθJC
0.45
0.6
Rev.1.0: August 2019
www.aosmd.com
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