AON6704 [AOS]
Power Field-Effect Transistor, 85A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8;
| 型号： | AON6704 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Power Field-Effect Transistor, 85A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON6704
30V N-Channel MOSFET
TM
SRFET
General Description
Product Summary
SRFETTM AON6704 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
VDS
30V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
85A
< 2.5mΩ
< 3.4mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
D
Top View
Top View
Bottom View
SRFETTM
1
8
Soft Recovery MOSFET:
Integrated Schottky Diode
2
3
7
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
85
V
V
VGS
TC=25°C
Continuous Drain
Current G
ID
TC=100°C
66
A
Pulsed Drain Current C
IDM
250
24
TA=25°C
TA=70°C
Continuous Drain
Current
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
A
19
IAS, IAR
50
A
EAS, EAR
125
83
mJ
TC=25°C
PD
W
Power Dissipation B
TC=100°C
33
TA=25°C
2.5
PDSM
W
°C
Power Dissipation A
1.6
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
15
Max
20
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t
≤ 10s
RθJA
Steady-State
Steady-State
42
50
RθJC
1.1
1.5
Rev 3 : March 2011
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Page 1 of 7
AON6704
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=10mA, VGS=0V
VDS=30V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
0.5
mA
100
IDSS
Zero Gate Voltage Drain Current
TJ=125°C
TJ=125°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2.4
nA
V
VGS(th)
ID(ON)
1.4
1.9
250
A
2
2.5
3.9
3.4
mΩ
RDS(ON)
Static Drain-Source On-Resistance
3.2
2.7
120
0.4
VGS=4.5V, ID=20A
mΩ
S
VDS=5V, ID=20A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.7
85
V
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3000 3800 4600
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
420
250
0.3
600
420
0.6
780
590
0.9
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
22
32
10
13
10
6
39
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=15V, ID=20A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
tD(off)
tf
38
8
trr
IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs
10
19
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
14
24
17
30
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: March 2011
www.aosmd.com
Page 2 of 7
AON6704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
100
80
60
40
20
0
10V
VDS=5V
4.5V
3V
3V
125°C
25°C
VGS=2.5V
4
1
1.5
2
2.5
VGS(Volts)
3
3.5
4
0
1
2
3
5
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
5
2.2
2
4
3
2
1
0
VGS=4.5V
ID=20A
VGS=4.5V
VGS=10V
1.8
1.6
1.4
1.2
1
VGS=10V
ID=20A
0.8
0
5
10
15
ID (A)
20
25
30
0
25
50
75
100 125 150 175 200
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
6
4
2
0
1.0E+02
1.0E+01
ID=20A
125°C
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: March 2011
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Page 3 of 7
AON6704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6000
10
VDS=15V
ID=20A
5000
4000
3000
2000
1000
0
Ciss
8
6
4
2
Coss
Crss
0
0
5
10
15
DS (Volts)
20
25
30
0
20
40
g (nC)
60
80
V
Q
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
200
160
120
80
1000.0
100.0
10.0
1.0
RDS(ON)
limited
TJ(Max)=150°C
10µs
TC=25°C
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.1
40
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
0.1
0.01
PD
Single Pulse
0.0001
Ton
T
0.00001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: March 2011
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Page 4 of 7
AON6704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
TA=25°C
80
60
40
20
0
TA=100°C
100
10
1
TA=150°C
TA=125°C
1
10
100
1000
0
25
50
75
100
125
150
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
T
CASE (°C)
Figure 13: Power De-rating (Note F)
10000
1000
100
10
100
80
60
40
20
0
TA=25°C
1
0.00001
0.001
0.1
10
1000
0
25
50
75
TCASE (°C)
100
125
15
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Figure 14: Current De-rating (Note F)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
0.1
PD
0.01
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 3: March 2011
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Page 5 of 7
AON6704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
20A 10A
5A
VDS=30V
IS=1A
VDS=15V
0
50
100
150
200
0
50
100
Temperature (°C)
150
200
Temperature (°C)
Figure 18: Diode Forward voltage vs. Junction
Temperature
Figure 17: Diode Reverse Leakage Current vs.
Junction Temperature
14
12
10
8
3
40
35
30
25
20
15
10
12
10
8
di/dt=800A/µs
trr
125ºC
25ºC
di/dt=800A/µs
2.5
2
125ºC
1.5
1
125ºC
25ºC
Qrr
6
6
125ºC
25ºC
4
S
4
0.5
0
Irm
2
25ºC
0
2
0
5
10
15
20
25
30
0
5
10
15
IS (A)
20
25
30
IS (A)
Figure 19: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
Figure 18: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
30
25
20
15
10
5
20
21
18
15
12
9
4
Is=20A
125ºC
Is=20A
trr
25ºC
3.5
3
15
10
5
25ºC
2.5
2
125ºC
Qrr
1.5
1
25ºC
S
6
125ºC
Irm
3
0.5
25ºC
125º
0
0
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Figure 21: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev 3: March 2011
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Page 6 of 7
AON6704
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 3: March 2011
www.aosmd.com
Page 7 of 7
相关型号：
AON6718
Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, GREEN, DFN-8
AOS
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