AOTF10B60D [AOS]
AOTF10B60D;
| 型号： | AOTF10B60D |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | AOTF10B60D |
| 文件： | 总9页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTF10B60D
600V, 10A Alpha IGBT TM with Diode
General Description
Product Summary
The Alpha IGBTTM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
VCE
600V
10A
IC (TC=100°C)
VCE(sat) (TC=25°C)
1.53V
Top View
TO-220F
C
G
E
E
C
G
AOTF10B60D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
V CE
AOTF10B60D
Units
Collector-Emitter Voltage
Gate-Emitter Voltage
600
±20
20$
10$
40
V
V
V GE
TC=25°C
Continuous Collector
Current
I C
A
TC=100°C
Pulsed Collector Current, Limited by TJmax
I CM
I LM
A
A
Turn off SOA, VCE ≤ 600V, Limited by TJmax
40
20
10
40
TC=25°C
Continuous Diode
Forward Current
I F
A
A
TC=100°C
Diode Pulsed Current, Limited by TJmax
I FM
Short circuit withstanding time VGE = 15V, VCE
t SC
10
µs
≤ 400V, Delay between short circuits ≥ 1.0s,
TC=150°C
TC=25°C
42
16.7
P D
W
°C
TC=100°C
Power Dissipation
Junction and Storage Temperature Range
T J , T STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T L
300
°C
Thermal Characteristics
Parameter
Symbol
AOTF10B60D
Units
°C/W
°C/W
°C/W
R θ
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
65
3
JA
R θ
JC
R θ
4
JC
$:TO220F IC Follow TO220
Rev0: July 2012
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Page 1 of 9
AOTF10B60D
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV CES
V CE(sat)
IC=1mA, VGE=0V, TJ=25°C
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
600
-
1.53
1.75
1.81
1.52
1.48
1.44
5.8
-
-
V
V
TJ=25°C
-
-
-
-
-
-
-
-
-
-
-
-
1.8
VGE=15V, IC=10A
TJ=125°C
TJ=150°C
TJ=25°C
-
-
1.85
V F
VGE=0V, IC=10A
VCE=VGE, IC=1mA
VCE=600V, VGE=0V
Diode Forward Voltage
V
V
TJ=125°C
TJ=150°C
-
-
V GE(th)
I CES
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
-
TJ=25°C
10
200
1000
±100
-
TJ=125°C
TJ=150°C
-
µA
-
I GES
g FS
VCE=0V, VGE=±20V
VCE=20V, IC=10A
Gate-Emitter leakage current
Forward Transconductance
-
nA
S
4.8
DYNAMIC PARAMETERS
C ies
C oes
C res
Q g
Input Capacitance
-
-
-
-
-
-
824
68
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
VGE=0V, VCE=25V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2.7
17.4
6.2
6.3
VGE=15V, VCE=480V, IC=10A
Q ge
Q gc
Gate to Emitter Charge
Gate to Collector Charge
Short circuit collector current, Max.
1000 short circuits, Delay between
short circuits ≥ 1.0s
I C(SC)
VGE=15V, VCE=400V, RG=30Ω
-
-
43
-
-
A
VGE=0V, VCE=0V, f=1MHz
R g
Gate resistance
3.2
Ω
SWITCHING PARAMETERS, (Load Iductive, TJ=25°C)
t D(on)
t r
t D(off)
t f
Turn-On DelayTime
-
-
-
-
-
-
-
-
-
-
10
15
-
-
-
-
-
-
-
-
-
-
ns
ns
Turn-On Rise Time
TJ=25°C
VGE=15V, VCE=400V, IC=10A,
RG=30Ω,
Turn-Off Delay Time
72
ns
Turn-Off Fall Time
8.8
0.26
0.07
0.33
105
0.25
5
ns
Parasitic Ιnductance=100nH
E on
E off
E total
t rr
Turn-On Energy
mJ
mJ
mJ
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
ns
TJ=25°C
Q rr
I rm
µC
IF=10A,dI/dt=200A/µs,VCE=400V
A
SWITCHING PARAMETERS, (Load Iductive, TJ=150°C)
t D(on)
t r
t D(off)
t f
Turn-On DelayTime
-
-
-
-
-
-
-
-
-
-
10.4
15.6
91
-
-
-
-
-
-
-
-
-
-
ns
ns
Turn-On Rise Time
TJ=150°C
VGE=15V, VCE=400V, IC=10A,
RG=30Ω,
Turn-Off Delay Time
ns
Turn-Off Fall Time
10.4
0.35
0.16
0.51
194
0.55
6.3
ns
E on
E off
E total
t rr
Turn-On Energy
mJ
mJ
mJ
Parasitic Inductance=100nH
Turn-Off Energy
Total Switching Energy
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Peak Reverse Recovery Current
ns
TJ=150°C
Q rr
I rm
µC
IF=10A,dI/dt=200A/µs,VCE=400V
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: July 2012
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Page 2 of 9
AOTF10B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
20V
20V
17V
60
17V
50
15V
13V
15V
40
13V
30
20
11V
11V
9V
VGE= 7V
9V
6
10
0
VGE=7V
0
1
2
3
4
5
7
0
1
2
3
4
5
6
7
VCE(V)
VCE(V)
Fig 1: Output Characteristic
(Tj=25°C )
Fig 2: Output Characteristic
(Tj=150°C )
50
40
30
20
10
0
50
40
30
20
10
0
VCE=20V
-40°C
-40°C
150°C
25°C
150°C
25°C
4
7
10
13
16
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
VGE(V)
Fig 3: Transfer Characteristic
Fig 4: Diode Characteristic
4
3
2
1
0
45
40
35
30
25
20
15
10
5
45
40
35
30
25
20
15
10
5
IC=20A
IC=10A
IC=5A
0
0
0
25
50
75
100
125
150
5
8
11
VGE (V)
Fig 6: VGE vs. Short Circuit Time
(VCE=400V,TC=25°C
14
17
20
Temperature (°C)
Fig 5: Collector-Emitter Saturation Voltage vs.
Junction Temperature
)
Rev0: July 2012
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Page 3 of 9
AOTF10B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VCE=480V
IC=10A
Cies
Coes
6
Cres
3
0
1
0
4
8
12
16
20
0
5
10
15
20
VCE(V)
25
30
35
40
Qg(nC)
Fig 7: Gate-Charge Characteristics
Fig 8: Capacitance Characteristic
100
10
1
10
100
1,000
VCE (V)
Fig 10: Reverse Bias SOA
(Tj=150°C,V GE=15V)
50
40
30
20
10
0
25
50
75
TCASE(°C)
100
125
150
Fig 11: Power Disspation as a Function of Case
Rev0: July 2012
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Page 4 of 9
AOTF10B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
100
10
10,000
1,000
100
10
Td(off)
Tf
Td(off)
Tf
Td(on)
Tr
Td(on)
Tr
1
1
0
5
10
15
20
25
0
50
100
150
200
250
300
350
Rg (Ω)
IC (A)
Figure 13: Switching Time vs. Rg
(Tj=150°C,V GE=15V,VCE=400V,IC=10A)
Figure 12: Switching Time vs. IC
(Tj=150°C,V GE=15V,VCE=400V,Rg=30Ω)
1000
100
10
10
Td(off)
Tf
Td(on)
Tr
8
6
4
2
0
1
0
30
60
TJ (°C)
Figure 15: VGE(TH) vs. Tj
90
120
150
0
50
100
TJ (°C)
150
200
Figure 14: Switching Time vs.Tj
( VGE=15V,VCE=400V,IC=10A,Rg=30Ω)
Rev0: July 2012
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Page 5 of 9
AOTF10B60D
≤
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.5
1.2
0.9
0.6
0.3
0
1.5
1.2
0.9
0.6
0.3
0.0
Eoff
Eoff
Eon
Eon
Etotal
Etotal
0
5
10
IC (A)
Figure 16: Switching Loss vs. IC
15
20
25
0
50
100
150
Rg (Ω)
200
250
300
Figure 17: Switching Loss vs. Rg
(Tj=150°C,V GE=15V,VCE=400V,IC=10A)
(Tj=150°C,V GE=15V,VCE=400V,Rg=30Ω)
0.8
0.6
0.4
0.2
0
0.8
Eoff
Eoff
Eon
Eon
0.6
0.4
0.2
0.0
Etotal
Etotal
0
25
50
75
TJ (°C)
Figure 18: Switching Loss vs. Tj
(VGE=15V,VCE=400V,IC=10A,Rg=30Ω)
100
125
150
175
200
250
300
350
VCE (V)
400
450
500
Figure 19: Switching Loss vs. VCE
(Tj=150°C,V GE=15V,IC=10A,Rg=30Ω)
Rev0: July 2012
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Page 6 of 9
AOTF10B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
2.2
1.7
1.2
0.7
0.2
15A
10A
5A
VCE=600V
IF=1A
VCE=400V
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Temperature (°C )
Temperature (°C )
Fig 21: Diode Forward voltage vs. Junction
Temperature
Fig 20: Diode Reverse Leakage Current vs.
Junction Temperature
1000
900
800
700
600
500
400
300
200
100
0
100
90
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
12
10
8
150°C
150°C
Trr
Qrr
6
25°C
150°C
4
S
25°C
2
25°C
Irm
25°C
150°C
0
0
0
5
10
15
IS (A)
20
25
0
5
10
15
20
25
IF(A)
Fig 22: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Fig 23: Diode Reverse Recovery Time and Softness
Factor vs. Conduction Current
(VGE=15V,VCE=400V, di/dt=200A/µs)
(VGE=15V,VCE=400V, di/dt=200A/µs)
200
160
120
80
20
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
150°C
16
12
150°C
25°C
Qrr
S
8
4
0
Trr
25°C
150°C
25°C
150°C
40
Irm
25°C
0
100 200 300 400 500 600 700 800 900
100 200 300 400 500 600 700 800 900
di/dt (A/µS)
di/dt (A/µS)
Fig 24: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Fig 25: Diode Reverse Recovery Time and Softness
Factor vs. di/dt
(VGE=15V,VCE=400V,IF=10A)
(VGE=15V,VCE=400V,IF=10A)
Rev0: July 2012
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Page 7 of 9
AOTF10B60D
□
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
R
θJC=3°C/W
1
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.0001
1E-06
1E-05
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for IGBT
10
1
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
θJC=4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
0.1
PD
Single Pulse
0.01
0.001
Ton
T
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 27: Normalized Maximum Transient Thermal Impedance for Diode
Rev0: July 2012
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Page 8 of 9
AOTF10B60D
Rev0: July 2012
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Page 9 of 9
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