AOTE21115C [AOS]
Small Signal Field-Effect Transistor,;
| 型号： | AOTE21115C |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOTE21115C
20V P-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MOSFET technology
• Low RDS(ON)
• Low Gate Charge
-20V
-5.1A
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
RDS(ON) (at VGS=-2.5V)
RDS(ON) (at VGS=-1.8V)
< 40mΩ
< 55mΩ
< 72mΩ
• RoHS and Halogen-Free Compliant
Typical ESD protection
HBM Class 2
Applications
• This device is ideal for Load Switch
D2
D1
TSSOP8
TSSOP-8
Top View
Top View
Bottom View
1
2
3
4
8
7
6
5
D1
S1
S1
G1
D2
S2
S2
G2
G2
G1
S2
S1
Orderable Part Number
Package Type
Form
Tape & Reel
Minimum Order Quantity
AOTE21115C
TSSOP-8
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-20
±8
V
V
VGS
TA=25°C
TA=70°C
-5.1
Continuous Drain
Current
ID
A
-3.9
Pulsed Drain Current C
IDM
PD
-20
TA=25°C
TA=70°C
1.5
W
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
64
Max
83
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RqJA
Maximum Junction-to-Ambient A D Steady-State
115
70
140
85
Maximum Junction-to-Lead
Steady-State
RqJL
Rev.2.0: December 2019
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Page 1 of 5
AOTE21115C
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250mA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-20
V
VDS=-20V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
μA
TJ=55°C
VDS=0V, VGS=±8V
VDS=VGS, ID=-250mA
VGS=-4.5V, ID=-5.1A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
±10
-0.95
40
μA
VGS(th)
-0.15
-0.55
33
V
mΩ
TJ=125°C
43
52
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4.4A
VGS=-1.8V, ID=-3.8A
VDS=-5V, ID=-5.1A
IS=-1A, VGS=0V
42
55
mΩ
mΩ
S
54
72
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
20
-0.7
-1
-2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
930
90
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
80
f=1MHz
15
30
17
SWITCHING PARAMETERS
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V,
ID=-5.1A
2.5
12
11
82
35
VGS=-4.5V, VDS=-10V,
RL=1.96W, RGEN=3W
tD(off)
tf
trr
IF=-5.1A, di/dt=500A/ms
IF=-5.1A, di/dt=500A/ms
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
25
37
ns
Qrr
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: December 2019
www.aosmd.com
Page 2 of 5
AOTE21115C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
25
-3V
-4.5V
VDS=-5V
20
15
10
5
-2.5V
30
20
10
0
125°C
-2V
-1.5V
25°C
VGS=-1V
0
0
1
2
3
4
5
0
1
2
3
4
5
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
-VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
70
60
50
40
30
20
1.6
1.4
1.2
1
VGS=-4.5V
ID=-5.1A
VGS=-1.8V
VGS=-2.5V
VGS=-1.8V
ID=-3.8A
VGS=-2.5V
ID=-4.4A
VGS=-4.5V
0.8
0
25
50
75
100
125
150
175
0
2
4
6
8
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E)
(Note E)
140
120
100
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=-5.1A
125°C
125°C
60
25°C
40
25°C
20
0
1
1.5
2
2.5
3
3.5
4
4.5
0.0
0.2
0.4
0.6
0.8
1.0
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.2.0: December 2019
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Page 3 of 5
AOTE21115C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1500
1200
900
600
300
0
VDS=-10V
ID=-5.1A
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TJ(Max)=150°C
TA=25°C
10ms
RDS(ON)
limited
100ms
1ms
10ms
100ms
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
1
0.01
0.1
1
10
100
1E-05
0.001
0.1
10
1000
-VDS (Volts)
VGS> or equal to -1.8V
Figure 9: Maximum Forward Biased
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Safe Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJA=140°C/W
0.1
PDM
0.01
0.001
Single Pulse
0.01
Ton
T
1E-05
0.0001
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: December 2019
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Page 4 of 5
AOTE21115C
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev.2.0: December 2019
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Page 5 of 5
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