AOU403L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AOU403L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOU403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU403 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU403 is Pb-free (meets ROHS & Sony
259 specifications). AOU403L is a Green Product
ordering option. AOU403 and AOU403L are
electrically identical.
VDS (V) = -60V
ID = -12A (VGS = -10V)
RDS(ON) < 115mΩ (VGS = -10V)
RDS(ON) < 150mΩ (VGS = -4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
±20
-12
V
A
TC=25°C
TC=100°C
ID
-10
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
-30
-12
A
23
mJ
TC=25°C
Power Dissipation B
TC=100°C
50
PD
W
25
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
RθJA
Typ
Max
Units
Steady-State
Steady-State
105
2.5
125
3
°C/W
°C/W
RθJC
Alpha & Omega Semiconductor, Ltd.
AOU403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
VDS=-48V, VGS=0V
-0.003
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.5
-30
-2.1
VGS=-10V, VDS=-5V
A
V
GS=-10V, ID=-12A
91
150
115
150
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-8A
114
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-12A
IS=-1A,VGS=0V
12.8
-0.76
S
V
A
-1
Maximum Body-Diode Continuous Current
-12
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
987
114
46
1185
10
pF
pF
pF
Ω
V
GS=0V, VDS=-30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
7
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
15.8
7.4
3
20
9
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=-10V, VDS=-30V, ID=-12A
3.5
9
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
25
11
27.5
30
ns
VGS=-10V, VDS=-30V, RL=2.5Ω,
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
35
ns
Qrr
nC
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev 2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
10
8
-10V
-6V
-5V
VDS=-5V
-7V
6
-4.5V
125°C
VGS=-4V
4
25°C
-3.5V
-3V
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
220
200
180
160
140
120
100
80
2
VGS=-10V
ID=-12A
1.8
1.6
1.4
1.2
1
VGS=-4.5V
VGS=-4.5V
ID=-8A
VGS=-10V
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
25
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
300
250
200
150
100
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-12A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOU403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
Ciss
VDS=-30V
ID=-12A
8
6
4
Coss
Crss
2
0
0
5
10
15
-VDS (Volts)
20
25
30
0
4
8
12
16
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
200
160
120
80
TJ(Max)=175°C, TA=25°C
10µs
TJ(Max)=175°C
TA=25°C
RDS(ON)
limited
100µs
10ms
DC
1ms
40
0
0.1
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
J,PK=TC+PDM.ZθJC.RθJC
T
RθJC=3°C/W
1
0.1
PD
Ton
T
Single Pulse
0.0001
0.01
0.00001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
Alpha & Omega Semiconductor, Ltd.
AOU403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
12
10
8
60
50
40
30
20
10
0
L ⋅ ID
tA =
BV −VDD
TA=25°C
6
0
25
50
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
125
150
175
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0.001
14
12
10
8
6
4
2
0
0
25
50
75
CASE (°C)
Figure 14: Current De-rating (Note B)
100
125
150
175
T
Alpha & Omega Semiconductor, Ltd.
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