MTA025P01N6-0-T1-G [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTA025P01N6-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
BVDSS
-14V
MTA025P01N6
ID@VGS=-4.5V, TC=25°C
ID@VGS=-4.5V, TA=25°C
-7.1A
-6.0A
22.5mΩ
30.3mΩ
49.0mΩ
VGS=-4.5V, ID=-4.5A
RDSON(TYP)
VGS=-2.5V, ID=-2.2A
VGS=-1.8V, ID=-2.2A
Features
• Simple drive requirement
• Low on-resistance
Equivalent Circuit
MTA025P01N6
• Small package outline
• Pb-free lead plating and halogen-free package
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Limits
-14
±8
Unit
V
VGS
-7.1
TC=25 °C, VGS=-4.5V
-5.7
-6.0
TC=70 °C, VGS=-4.5V
TA=25 °C, VGS=-4.5V (Note 1)
TA=70 °C, VGS=-4.5V (Note 1)
ID
IDM
PD
Continuous Drain Current
Pulsed Drain Current (Note 2, 3)
Total Power Dissipation
A
-4.8
-40
3.1
TC=25 °C
TC=70 °C
TA=25 °C
TA=70 °C
2.0
W
2.0
(Note 1)
(Note 1)
1.25
-55~+150
Tj, Tstg
Operating Junction Temperature and Storage Temperature Range
°C
Thermal Data
Parameter
Symbol
Rth,j-c
RθJA
Value
40
62.5
Unit
°C/W
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 2/9
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
ΔBVDSS/ΔTj
VGS(th)
-14
-
-0.4
-
-
-
-
-
-
-
-
-3
-
-
-
-
-
-1
±100
-100
-10
31.0
41.5
66.0
-
V
VGS=0V, ID=-250μA
mV/℃ Reference to 25℃, ID=-250μA
V
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
IGSS
nA
μA
VDS=-12V, VGS=0V, Tj=25℃
VDS=-12V, VGS=0V, Tj=55℃
ID=-4.5A, VGS=-4.5V
ID=-2.2A, VGS=-2.5V
ID=-2.2A, VGS=-1.8V
VDS=-5V, ID=-5A
IDSS
-
22.5
30.3
49.0
13
*RDS(ON)
*GFS
mΩ
S
Dynamic
Ciss
Coss
Crss
td(ON)
tr
-
-
-
-
-
-
-
-
-
-
1074
226
191
14.8
21.8
105.6
59.2
13.8
2.1
-
-
-
-
-
-
-
-
-
-
pF
ns
nC
A
VDS=-10V, VGS=0V, f=1MHz
VDS=-10V, ID=-1A, VGS=-4.5V, RG=6Ω
VDS=-10V, ID=-4A, VGS=-4.5V
td(OFF)
tf
Qg
Qgs
Qgd
4.2
Source-Drain Diode
*IS
*ISM
*VSD
*Trr
Qrr
-
-
-
-
-
-
-
-4
-16
-1
-
-0.77
80
68
V
ns
nC
IS=-1A,VGS=0V
IS=-4A,VGS=0V,dI/dt=100A/μs
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
SOT-26
Shipping
MTA025P01N6-0-T1-G
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 3/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
40
35
30
25
20
15
10
5
10V,9V,8V,7V,6V,5V,4
3V
2.5V
0.8
0.6
0.4
2
V
μ
ID=-250 A,
VGS=0V
-VGS=1.5V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
VGS=-2.5V VGS=-1.8V
VGS=-1.5V
VGS=-4.5V
Tj=150°C
VGS=-10V
0
2
4
6
8
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
100
80
2
1.8
1.6
1.4
1.2
1
VGS=-2.5V, ID=-2.2A
RDSON@Tj=25°C : 30.3mΩ typ.
ID=-4.5A
60
0.8
0.6
0.4
VGS=-4.5V, ID=-4.5A
RDSON @Tj=25°C: 22.5mΩ typ.
40
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
ID=-1mA
Ciss
1000
0.8
0.6
0.4
C
oss
I =-250 A
μ
D
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
10
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=-5V
Gate Charge Characteristics
10
100
8
6
4
2
0
10
1
VDS=-10V
0.1
0.01
VDS=-10V
ID=-4.5A
Pulsed
Ta=25°C
0
6
12
18
24
30
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs Junction Temperature
100
10
7
6
5
4
3
2
1
0
100 s
μ
1ms
RDS(ON)
Limited
10ms
100ms
1
1s
TA=25°C, Tj=150°C
JA
DC
0.1
0.01
R
Single Pulse
=62.5°C/W, VGS=-4.5V
θ
VGS=-4.5V, R JA=62.5°C/W
θ
0.01
0.1
1
10
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
-VDS, Drain-Source Voltage(V)
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
40
1000
900
800
700
600
500
400
300
200
100
0
VDS=-5V
35
TJ(MAX)=150°C
TA=25°C
30
25
20
15
10
5
RθJA=62.5°C/W
0
0.0001 0.001 0.01
0.1 1
Pulse Width(s)
10
100 1000
0
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
Power Derating Curve
Power Derating Curve
4
3.6
3.2
2.8
2.4
2
2.2
2
Mounted on FR-4 board
1.8
1.6
1.4
1.2
1
²
with 1 in pad area
1.6
1.2
0.8
0.4
0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
TA, Ambient Temperature(℃)
TC, Case Temperature(℃)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
1
2
2.Duty Factor, D=t /t
JM
A
DM
JA
3.T -T =P *Rθ (t)
0.1
0.1
0.01
=62.5
4.RθJA
°C/W
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
t , Square Wave Pulse Duration(s)
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 6/9
CYStech Electronics Corp.
Recommended Soldering Footprint
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA025P01N6
CYStek Product Specification
Spec. No. : C089N6
Issued Date : 2015.11.23
Revised Date : 2016.03.18
Page No. : 9/9
CYStech Electronics Corp.
SOT-26 Dimension
Marking:
Device Name
Date Code
A25P
□□□□
●
●
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Drain
Pin 2. Drain
Pin 3. Gate
(D)
(D)
(G)
Pin 4. Source (S)
Pin 5. Drain
Pin 6. Drain
(D)
(D)
Millimeters
DIM
Inches
Max.
Millimeters
Min. Max.
Inches
DIM
Min.
Max.
Min.
Min.
0.059
0.104
Max.
0.067
0.116
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.250
0.100
1.150
0.500
0.200
3.020
0.041
0.000
0.041
0.012
0.004
0.111
0.049
0.004
0.045
0.020
0.008
0.119
E
E1
e
e1
L
1.500
2.650
1.700
2.950
0.950 (BSC)
0.037 (BSC)
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
c
D
θ
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA025P01N6
CYStek Product Specification
相关型号：
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