MTA035P02Q8-0-T3-G [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTA035P02Q8-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：487K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTA035P02Q8
BVDSS
-20V
-7.9A
ID @ TA=25°C, VGS=-4.5V
RDS(ON)@VGS=-4.5V, ID=-7.6A
RDS(ON)@VGS=-2.5V, ID=-6A
27.5 mΩ(typ)
34.0 mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching characteristic
• Pb-free & halogen-free package
Symbol
Outline
MTA035P02Q8
SOP-8
D
D
D
D
G
S
S
S
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
Shipping
SOP-8
MTA035P02Q8-0-T3-G
2500 pcs / Tape & Reel
(RoHS compliant & Halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
±8
-11
-7
-7.9
-6.3
-40 *1
-30
Continuous Drain Current @ VGS=-4.5V, TC=25°C
Continuous Drain Current @ VGS=-4.5V, TC=100°C
Continuous Drain Current @ VGS=-4.5V, TA=25°C
Continuous Drain Current @ VGS=-4.5V, TA=70°C
Pulsed Drain Current
ID
A
IDM
IAS
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=-12A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
EAS
EAR
72 *3
0.5 *2
2.5
mJ
TA=25 °C
Total Power Dissipation
PD
W
1.6
TA=70 °C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
.
Note : *1 Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.1mH, IAS=-8A, VGS=-10V, VDD=-15V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Symbol
RθJC
RθJA
°
Value
25
50
Unit
°C/W
2
Note : 50°C / W when mounted on a 1 in pad of 2 oz copper, t≤10s; 125 C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
-20
-0.5
-
-
-1.2
-
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-10V, ID=-3A
V
-
11.3
-
-
-
-
-
-
-
-
-
S
nA
±
100
1
±
IGSS
VGS= 8V, VDS=0V
VDS =-16V, VGS =0V
VDS =-16V, VGS =0V, Tj=55°C
VGS =-4.5V, ID=-7.6A
IDSS
μA
10
38
48
27.5
34.0
Ω
m
*RDS(ON)
VGS =-2.5V, ID=-6A
Dynamic
Qg
Qgs
Qgd
-
-
-
-
-
-
20
2.8
5
1913
160
125
26
-
-
-
-
*1, 2
*1, 2
*1, 2
nC
VDS=-10V, ID=-5A, VGS=-4.5V
VDS=-10V, VGS=0V, f=1MHz
Ciss
Coss
Crss
pF
-
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Dynamic
td(ON) *1, 2
-
-
-
-
14.4
25
180.4
97.2
29
50
360
195
VDS=-10V, ID=-1A, VGS=-4.5V,
tr
*1, 2
ns
td(OFF) *1, 2
RG=10Ω
tf
*1, 2
Source-Drain Diode Ratings and Characteristics
IS
-
-
-
-
-
-
-
-4
-16
-1.2
-
*1
A
ISM *3
VSD *1
trr
-0.79
10.5
4.5
V
ns
nC
IS=-2A, VGS=0V
IF=-6.8A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
40
35
30
1.4
1.2
1
2.5V
ID=-250μA,
VGS=0V
10V, 9V, 8V, 7V, 6V,5V,4V,3V
25
20
15
10
5
-VGS=2V
0.8
0.6
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
-VGS=2.5V
Tj=150°C
-VGS=4.5V
10
0.01
0
4
8
12
16
20
0.1
1
10
100
D
DR
-I , Reverse Drain Current (A)
-I , Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
1.6
1.4
1.2
1
45
40
35
30
25
20
15
10
5
VGS=-4.5V, ID=-7.6A
RDS(ON)@Tj=25°C : 27.5mΩ typ.
ID=-7.6A
ID=-6A
0.8
0.6
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.6
1.4
1.2
1
Ciss
ID=-1mA
1000
C
oss
0.8
0.6
0.4
0.2
100
10
ID=-250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175
0
4
8
12
16
20
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
8
7
6
5
4
3
2
1
0
VDS=-10V
ID=-5A
1
VDS=-10V
0.1
0.01
Pulsed
Ta=25°C
0
5
10
15
20
25
30
35
40
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
10
9
8
7
6
5
4
3
2
1
0
100μs
10
1
1ms
10ms
100ms
DC
0.1
0.01
TA=25°C, Tj=150°C, VGS=-4.5V,
θ
R
JA=50°C/W, Single Pulse
θJA
TA=25°C, VGS=-4.5V, R =50°C/W
0.01
0.1
1
10
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
-VDS, Drain-Source Voltage(V)
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
40
500
450
400
350
300
250
200
150
100
50
-VDS=5V
35
TJ(MAX)=150°C
TA=25°C
θJA
30
25
20
15
10
5
R
=50°C/W
0
0
0.0001 0.001
0.01
0.1
1
10
100
0
1
2
3
4
5
Pulse Width(s)
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
0.1
0.1
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.05
=50
4.RθJA
°C/W
0.02
0.01
0.01
Single Pulse
0.01
0.001
0.0001
0.001
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
Time 25 °C to peak temperature
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTA035P02Q8
CYStek Product Specification
Spec. No. : C566Q8
Issued Date : 2018.03.07
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOP-8 Dimension
Marking:
A035
Device Name
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
DIM
Inches
Min.
Millimeters
Min. Max.
1.270 (BSC)
Inches
Min. Max.
0.050 (BSC)
DIM
Min.
1.35
0.10
0.38
0.19
4.80
3.80
Max.
Max.
0.069
0.010
0.020
0.010
0.197
0.157
A
A(1)
B
1.75
0.25
0.51
0.25
5.00
4.00
0.053
0.004
0.015
0.007
0.189
0.150
e
H
L
α
h
5.80
0.50
0
6.20
0.93
8°
0.228
0.020
0
0.244
0.037
8°
C
D
E
0.25
0.50
0.010
0.020
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA035P02Q8
CYStek Product Specification
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