MTA028P01V8-0-T6-G [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTA028P01V8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：343K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 1/10
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTA028P01V8
BVDSS
-14V
-20.8A
ID@ TC=25C, VGS=-4.5V
ID@ TA=25C, VGS=-4.5V
RDSON @VGS=-4.5V, ID=-10A
RDSON @VGS=-2.5V, ID=-7A
RDSON @VGS=-1.8V, ID=-5A
-6.5A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
22mΩ(typ.)
28mΩ(typ.)
38 mΩ(typ.)
Equivalent Circuit
Outline
DFN3×3
MTA028P01V8
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
Package
Shipping
DFN3×3
MTA028P01V8-0-T6-G
3000 pcs / Tape & Reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 2/10
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
VDS
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-14
±8
VGS
-20.8
-13.2
-6.5
Continuous Drain Current @ TC=25C, VGS=-4.5V
Continuous Drain Current @ TC=100C, VGS=-4.5V
Continuous Drain Current @ TA=25C, VGS=-4.5V
Continuous Drain Current @ TA=70C, VGS=-4.5V
Pulsed Drain Current
ID
A
-5.2
IDM
IAS
-83 *1
-24
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=-12A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
EAS
EAR
72 *4
2.5 *2
25
mJ
TC=100℃
Total Power Dissipation
TA=25℃
10
PD
W
2.5 *3
1.6 *3
-55~+150
TA=70℃
Operating Junction and Storage Temperature Range
Tj, Tstg
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
Symbol
RθJC
RθJA
Value
Unit
C/W
5
50 *3
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125C/W when mounted on minimum copper pad.
4. 100% tested by conditions of L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
-14
-0.4
-
-
-
-
-
-
-1.0
±100
-1
-10
32
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-10V, VGS=0V
VDS=-10V, VGS=0V, Tj=55C
VGS=-4.5V, ID=-10A
VGS=-2.5V, ID=-7A
V
-
-
-
-
-
nA
μA
IDSS
22
28
44
RDS(ON) *1
m
-
-
38
31
86
-
VGS=-1.8V, ID=-5A
VDS=-5V, ID=-3A
GFS
S
*1
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 3/10
CYStech Electronics Corp.
Electrical Characteristics(Cont.) (Tj=25C, unless otherwise specified)
Symbol
Dynamic
Min.
Typ.
Max.
Unit
Test Conditions
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
1276
251
233
16
2.1
5.2
-
-
-
32
-
-
-
-
-
-
pF
VDS=-10V, VGS=0V, f=1MHz
VDS=-10V, ID=-10A, VGS=-4.5V
VDS=-10V, ID=-10A, VGS=-4.5V,
Qg
Qgs
Qgd
*1, 2
*1, 2
*1, 2
nC
15
td(ON) *1, 2
26.2
63.2
44.2
10
tr
*1, 2
ns
Ω
RG=6
td(OFF) *1, 2
tf
*1, 2
Rg
-
f=1MHz
Source-Drain Diode
IS
-
-
-
-
-
-
-
-20.8
-83
-1.2
-
*1
A
ISM *3
VSD *1
trr
-0.8
25.8
6.4
V
ns
nC
IF=-5A, VGS=0V
IF=-5A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 4/10
CYStech Electronics Corp.
Recommended Soldering Footprint
unit : mm
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 5/10
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
80
8V
3.5V
3V
7V
6V
60
5V
4.5V
4V
2.5V
2V
40
20
0
0.8
0.6
0.4
ID=-250μA,
-VGS=1.5V
VGS=0V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
ꢀꢁ, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
100
1.2
1
VGS=0V
ꢀꢁ=ꢎ5°C
VGS=-1.8V
0.8
0.6
0.4
0.2
ꢀꢁ=ꢏ5ꢐ°C
VGS=-2.5V
VGS=-4.5V
10
0
4
8
12
16
20
0.01
0.1
1
10
-ID, Drain Current(A)
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=-4.5V, ID=-10A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
1.8
180
160
140
120
100
80
1.6
1.4
1.2
1
ID=-10A
60
0.8
0.6
0.4
40
RDS(ON)@ꢀꢁ=ꢎ5°C : ꢎꢎ ꢇΩ ꢄyꢈꢒ
ID=-7A
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
ꢀꢁ, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 6/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
Ciss
ID=-1mA
0.8
0.6
0.4
Coss
ID=-250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
ꢀꢁ, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
8
7
6
5
4
3
2
1
0
100
VDS=-15V
10
1
VDS=-10V
0.1
VDS=-5V
Pulsed
0.01
TA=ꢎ5°C
ID=-10A
0.001
0
4
8
12 16 20 24 28 32 36
Qg, Total Gate Charge(nC)
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
8
7
6
5
4
3
2
1
0
100
10
100μs
1ms
10ms
100ms
1
1s
DC
0.1
0.01
TA=ꢎ5°C, ꢀꢁ=ꢏ5ꢐ°C, ꢓGS=-4.5V
RθJA=5ꢐ°Cꢔꢕ, ꢑꢅꢃgꢖe Pꢂꢖꢍe
TA=ꢎ5°C, ꢓGS=-4.5V, RθJA=5ꢐ°
25
50
75
100
125
150
175
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
Tj, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 7/10
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
300
250
200
150
100
50
80
70
60
50
40
30
20
10
0
TJ(MAX)=ꢏ5ꢐ°C
TA=ꢎ5°C
VDS=5V
RθJA=5ꢐ°Cꢔꢕ
0
0.0001 0.001 0.01
0.1
1
10
100 1000
0
1
1
2
3
4
5
-VGS, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 8/10
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 9/10
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
Soldering Time
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
Ramp down rate
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Time 25 C to peak temperature
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTA028P01V8
CYStek Product Specification
Spec. No. : C101V8
Issued Date : 2018.08.16
Revised Date : 2018.08.17
Page No. : 10/10
CYStech Electronics Corp.
DFN3×3 Dimension
Marking:
D
D
D D
A028
P01
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
DIM
Inches
Millimeters
Inches
Min.
DIM
Min.
0.605
Max.
0.850
Min.
0.026
Max.
0.033
Min.
0.200
0.550
0.300
0.180
0.000
0.000
0.315
9°
Max.
0.400
0.750
0.500
0.480
0.100
0.100
0.515
13°
Max.
0.016
0.030
0.020
0.019
0.004
0.004
0.020
13°
A
A1
A2
D
b
e
L
L1
L2
L3
H
0.008
0.022
0.012
0.007
0.000
0.000
0.012
9°
0.152 REF
0.006 REF
0.000
2.900
2.300
2.900
3.150
1.535
0.050
3.100
2.600
3.100
3.450
1.935
0.000
0.114
0.091
0.114
0.124
0.060
0.002
0.122
0.102
0.122
0.136
0.076
D1
E
E1
E2
θ
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA028P01V8
CYStek Product Specification
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