MTA025P02Q8 [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTA025P02Q8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：326K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
BVDSS
-20V
-10A
MTA025P02Q8
ID@ VGS=-4.5V, TA=25°C
RDSON @VGS=-4.5V, ID=-7.6A
RDSON @VGS=-2.5V, ID=-6A
14.2mΩ(typ.)
18.0mΩ(typ.)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
Outline
SOP-8
MTA025P02Q8
D
D
D
D
G
S
S
S
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
MTA025P02Q8-0-T3-G
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
VDS
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-20
VGS
±8
-10
Continuous Drain Current @ TA=25C, VGS=-4.5V
Continuous Drain Current @ TA=70C, VGS=-4.5V
Pulsed Drain Current
ID
-8
A
IDM
IAS
-50 *1
-30
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=-10A, VDD=-15V
Repetitive Avalanche Energy @ L=0.05mH
EAS
EAR
50 *4
2.5 *2
3.1 *3
mJ
TA=25℃
Total Power Dissipation
TA=70℃
PD
W
2
*3
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
Symbol
Rth,j-c
Rth,j-a
Value
20
40 *3
Unit
C/W
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125C/W when mounted on minimum copper pad.
4. 100% tested by conditions of L=0.1mH, IAS=-8A, VGS=-10V, VDD=-15V
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
-20
-0.4
-
-
-
-
-
-
-1.2
±100
-1
-10
20
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
V
-
-
-
-
-
nA
μA
VDS=-16V, VGS=0V
VDS=-16V, VGS=0V, Tj=125C
VGS=-4.5V, ID=-7.6A
VGS=-2.5V, ID=-6A
14.2
18.0
RDS(ON) *1
m
30
GFS
-
26.5
-
S
VDS=-5V, ID=-10A
*1
Dynamic
Ciss
Coss
Crss
-
-
-
2453
219
165
-
-
-
pF
VDS=-10V, VGS=0V, f=1MHz
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
td(ON) *1, 2
-
-
-
-
-
-
-
-
12.6
11
113.4
145.8
24.9
3.5
25
22
170
220
35
-
VDD=-10V, ID=-7.6A,
tr
*1, 2
ns
Ω
VGS=-4.5V, RG=6
td(OFF) *1, 2
tf
*1, 2
Qg
*1, 2
Qgs
*1, 2
nC
VDS=-10V, ID=-7.6A, VGS=-4.5V
f=1MHz
5.4
18
Qgd
-
-
*1, 2
Rg
Source-Drain Diode
IS
-
-
-
-
-
-
-
-4
-16
-1.2
-
*1
A
ISM *3
VSD *1
trr
-0.75
53.8
34.8
V
ns
nC
IS=-2A, VGS=0V
IF=-2A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
50
8V, 7V, 6V, 5V, 4V, 3.5V, 3V, 2.5V
40
30
20
10
0
2V
0.8
0.6
0.4
-VGS=1.5V
ID=-250μA,
VGS=0V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
ꢀꢁ, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
ꢀꢁ=ꢎꢏ°C
1
0.8
0.6
0.4
0.2
VGS=-2.5V
-3V
-4.5V
-5V
-10V
ꢀꢁ=ꢐꢏꢑ°C
10
0
2
4
8
12
16
20
0.01
0.1
1
10
-ID, Drain Current(A)
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
70
60
50
40
30
20
10
0
VGS=-4.5V, ID=-7.6A
1.8
1.6
1.4
1.2
1
ID=-7.6A
RDS(ON)@ꢀꢁ=ꢎꢏ°C : ꢐꢓꢔꢎ ꢇΩ ꢄyꢈꢔ
0.8
0.6
0.4
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
ꢀꢁ, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=-1mA
1000
0.8
0.6
0.4
Coss
ID=-250μA
Crss
2
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
4
6
8
10 12 14 16 18 20
-VDS, Drain-Source Voltage(V)
ꢀꢁ, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
8
6
4
2
0
100
VDS=-10V
10
1
VDS=-15V
VDS=-5V
Pulsed
0.1
0.01
TA=ꢎꢏ°C
ID=-7.6A
0
5
10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
12
100
10
100μs
10
8
1ms
10ms
100ms
1s
6
1
4
DC
0.1
0.01
TA=ꢎꢏ°C, ꢀꢁ=ꢐꢏꢑ°C, ꢕGS=-10V
RθJA=ꢓꢑ°Cꢖꢗ, ꢒꢅꢃgꢘe Pꢂꢘꢍe
2
TA=ꢎꢏ°C, ꢕGS=-10V, RθJA=ꢓꢑ°Cꢖꢗ
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
-ID, Drain-Source Voltage(V)
Tj, Jꢂꢃcꢄꢅꢆꢃ ꢀeꢇꢈeꢉaꢄꢂꢉeꢊ°Cꢋ
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
5
VDS=-5V
TJ(MAX)=ꢐꢏꢑ°C
TA=ꢎꢏ°C
RθJA=ꢓꢑ°Cꢖꢗ
0
0
0.0001 0.001 0.01
0.1
1
10
100 1000
0
1
2
3
4
5
Pulse Width(s)
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
1.E-02
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
Soldering Time
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
Ramp down rate
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA025P02Q8
CYStek Product Specification
Spec. No. : C573Q8
Issued Date : 2018.09.12
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOP-8 Dimension
Marking:
A025
Device Name
Date Code
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
DIM
Inches
Min.
Millimeters
Min. Max.
1.270 (BSC)
Inches
Min. Max.
0.050 (BSC)
DIM
Min.
1.35
0.10
0.38
0.19
4.80
3.80
Max.
Max.
0.069
0.010
0.020
0.010
0.197
0.157
A
A(1)
B
1.75
0.25
0.51
0.25
5.00
4.00
0.053
0.004
0.015
0.007
0.189
0.150
e
H
L
α
h
5.80
0.50
0
6.20
0.93
8°
0.228
0.020
0
0.244
0.037
8°
C
D
E
0.25
0.50
0.010
0.020
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA025P02Q8
CYStek Product Specification
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