EC734N60AR [E-CMOS]
N-Channel Power MOSFET;
| 型号： | EC734N60AR |
| 厂家： | 
E-CMOS Corporation |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总6页 (文件大小：466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EC734N60
N-Channel Power MOSFET
Features
◆ 600V, 4A, RDS(ON)(Max.) = 2.4Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Charger
Standby Power.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Limit
Symbol
Parameter
Unit
TO-251
TO-252
TO-220F
VDS
VGS
Drain – Source Voltage a
Gate-Source Voltage
Drain Current-Continuous, TC =25 ℃
Drain Current-Continuous, TC =100 ℃
Drain Current-Pulsed b
Maximum Power Dissipation @ TJ =25 ℃
Single Pulsed Avalanche Energy e
600
±30
4
2.5
16
V
V
A
A
A
W
mJ
℃
ID
IDM
PD
EAS
33
77
217
TJ, TSTG Operating and Store Temperature Range
-55 to 150
Thermal Characteristics
Symbol
Parameter
Value
Unit
Rθ JC
Thermal Resistance, Junction-Case Max.
3.58
120
1.61
110
℃ /W
Rθ JA
Thermal Resistance, Junction-Ambient Max.
℃ /W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4G22N-Rev.F001
EC734N60
N-Channel Power MOSFET
Electrical Characteristics( TJ = 25°C unless otherwise noted)
■ Off Characteristics
Typ.
Symbol
Test Condition
Unit
Parameter
Min.
Max.
-
-
600
Drain-Source Breakdown Voltage
V
VGS = 0V, ID = 250μ A
BVDSS
-
-
-
-
-
-
IDSS
Zero Gate Voltage Drain Current
1
μ A
nA
nA
VDS = 600V, VGS = 0V
VDS = 0V, VGS = 30V
Forward Gate Body Leakage
Current
100
-100
IGSSF
IGSSR
Reverse Gate Body Leakage
Current
VDS = 0V, VGS = -30V
■ On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250μA
VGS = 10V, ID = 2A
VDS = 15V, ID = 2A
2
-
2.62
4
V
Ω
S
RDS(on) Static Drain-Source On-Resistance d
1.91 2.4
gFS
Forward Transconductance d
-
2.3
10
■ Dynamic Characteristics
-
-
-
-
-
-
pF
pF
pF
464
87
Input Capacitance
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
16
■ Switching Characteristics
-
-
-
21.1
ns
ns
ns
td(on)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
VDD = 300V, ID = 4A,
7.5
tr
RG = 10Ω, VGS = 10V
-
-
td(off)
-
-
29.1
ns
nC
nC
6.3
8.4
3.2
2.8
tf
-
-
-
-
Qg
VDS = 300V, ID = 4A,
VGS = 10V
-
-
Qgs
Qgd
nC
E-CMOS Corp. (www.ecmos.com.tw)
Page 2 of 6
4G22N-Rev.F001
EC734N60
N-Channel Power MOSFET
■ Drain-Source Diode Characteristics
Drain-Source Diode Forward
Continuous Current
-
-
-
4
A
VGS = 0V
IS
-
-
Maximum Pulsed Current
16
A
V
ISM
VGS = 0V
Drain-Source Diode
Forward Voltage
0.81 1.4
VGS = 0V, IS = 4A
VSD
Notes :
a. TJ = +25 C to +150 C.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD= 4.0A di/dt≦ 100 A/μs, VDD≦ BVDSS, TJ ≦ +150 C.
d. Pulse width≦ 300 μs; duty cycle≦ 2%.
e. L=30mH, VDD =145V, IAS =2.52A, RG =25Ω Starting TJ =25 ℃.
V
DS, Drain-Source Voltage (V) for
V
DS, Drain-Source Voltage (V) for EC734N60AR
EC732N60A3R/EC734N60A4R
Figure 1-2 Maximum Safe Operating Area
Figure 1-1 Maximum Safe Operating Area
Figure 3. Gate Threshold Variation
with Temperature
Figure 2. Normalized On-Resistance
Variation with Temperature
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
4G22N-Rev.F001
EC734N60
N-Channel Power MOSFET
Figure 5. Gate Charge Characteristics
Figure 4. Capacitance Characteristics
Figure 6. On-State Characteristics
Figure 7. Body Diode Forward Voltage
Variation with Source Current
Figure 8. Transfer Characteristics
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 6
4G22N-Rev.F001
EC734N60
N-Channel Power MOSFET
Square Pulse Duration (sec) for EC734N60AR
Figure 9-2. Normalized Effective Transient Thermal Impedance With Pulse Duration
Square Pulse Duration (sec) for EC734N60A3R/EC734N60A4R
Figure 9-3. Normalized Effective Transient Thermal Impedance With Pulse Duration
Figure 10 . Maximum Drain Current Vs.
Case Temperature
E-CMOS Corp. (www.ecmos.com.tw)
Page 5 of 6
4G22N-Rev.F001
EC734N60
N-Channel Power MOSFET
ORDERING INFORMATION
Part Number
Package
Marking
Marking Information
EC734N60AR
TO-220F-3L
1. LLLLL：Lot No.
2. YY：Year code
3. WW：Week code
734N60
LLLLL
YYWW
EC734N60A3R
EC734N60A4R
TO-251-3L
TO-252-3L
E-CMOS Corp. (www.ecmos.com.tw)
Page 6 of 6
4G22N-Rev.F001
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