STPS16L45C [ETC]
LOW DROP POWER SCHOTTKY RECTIFIER ; 电力低压降肖特基整流器
| 型号： | STPS16L45C |
| 厂家： | 
ETC |
| 描述： | LOW DROP POWER SCHOTTKY RECTIFIER
|
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
STPS16L45CT/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
2 x 8 A
45 V
A1
A2
Tj (max)
VF (max)
150 °C
0.45 V
K
FEATURES AND BENEFITS
■
■
■
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION
INSULATED PACKAGE: TO-220FPAB
Insulated voltage: 2000V DC
Capacitance: 12 pF
A2
A2
K
K
A1
■
AVALANCHE CAPABILITY SPECIFIED
A1
DESCRIPTION
TO-220AB
STPS16L45CT
TO-220FPAB
STPS16L45CFP
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequency DC to DC converters.
Packaged in TO-220AB and TO-220FPAB, these
devices are intended for use in low voltage, high
frequency converters, free-wheeling and polarity
protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
45
Unit
V
IF(RMS)
IF(AV)
30
A
RMS forward current
8
Average forward current
Per diode
Per device
Per diode
Per device
Tc = 140°C
A
TO-220AB
δ = 0.5
16
8
Tc = 125°C
A
TO-220FPAB
δ = 0.5
16
IFSM
IRRM
IRSM
PARM
Tstg
180
A
A
Surge non repetitive forward current
Repetitive peak reverse current
tp = 10 ms sinusoidal
tp=2 µs square F=1kHz
tp = 100 µs square
1
2
A
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
4000
W
tp = 1µs Tj = 25°C
- 65 to + 150
150
°C
°C
V/µs
Tj
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dV/dt
10000
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j − a)
July 2003 - Ed : 3C
1/5
STPS16L45CT/CFP
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Per diode
Total
Coupling
Per diode
Total
2.2
1.3
0.3
4.5
3.5
2.5
°C/W
Junction to case
TO-220AB
TO-220FPAB
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
IR *
0.2
mA
Reverse leakage
current
Tj = 25°C
Tj = 125°C
VR = VRRM
65
130
0.5
mA
V
VF *
Forward voltage drop Tj = 25°C
Tj = 125°C
IF = 8 A
IF = 8 A
IF = 16 A
IF = 16 A
0.39
0.55
0.45
0.63
0.64
Tj = 25°C
Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
2
P = 0.26 x IF(AV) + 0.024 IF (RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average current versus ambient
temperature (δ = 0.5) (per diode).
PF(av)(W)
IF(av)(A)
9
6.0
Rth(j-a)=Rth(j-c)
δ = 0.2
δ = 0.1
δ = 0.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
δ = 0.05
7
TO-220AB
Rth(j-a)=15°C/W
6
TO-220FPAB
δ = 1
5
4
3
T
T
2
1
0
Tamb(°C)
tp
=tp/T
δ
IF(av) (A)
tp
=tp/T
δ
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P
(t )
p
(1µs)
ARM
P
ARM
(t )
p
(25°C)
ARM
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
T (°C)
j
t (µs)
p
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
2/5
STPS16L45CT/CFP
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220AB).
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220FPAB).
IM(A)
IM(A)
120
100
90
80
70
100
80
Tc=25°C
60
Tc=25°C
60
50
Tc=75°C
40
30
20
Tc=50°C
40
Tc=125°C
IM
Tc=100°C
IM
20
t
t
t(s)
δ=0.5
10
0
t(s)
δ=0.5
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AB).
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
δ = 0.5
0.6
0.6
0.4
δ = 0.2
0.4
δ = 0.2
T
T
δ = 0.1
δ = 0.1
0.2
0.2
Single pulse
tp
=tp/T
tp
tp(s)
δ
=tp/T
Single pulse
tp(s)
δ
0.0
1E-4
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
C(pF)
IR(mA)
2E+2
1E+2
2000
F=1MHz
Tj=25°C
Tj=150°C
1000
500
Tj=125°C
1E+1
Tj=75°C
1E+0
1E-1
200
Tj=25°C
VR(V)
VR(V)
1E-2
100
0
5
10
15
20
25
30
35
40
45
1
2
5
10
20
50
3/5
STPS16L45CT/CFP
Fig. 9: Forward voltage drop versus forward
current (maximum values) (per diode).
IFM(A)
100.0
Typical values
Tj=150°C
10.0
Tj=125°C
Tj=25°C
1.0
Tj=75°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
PACKAGE MECHANICAL DATA
TO-220FPAB
REF.
DIMENSIONS
Millimeters Inches
Min.
Min.
4.4
Max.
4.6
Max.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.205
0.106
0.409
A
A
B
0.173
0.098
0.098
0.018
0.030
0.045
0.045
0.195
0.094
0.393
B
H
2.5
2.7
D
2.5
2.75
0.70
1
E
0.45
0.75
1.15
1.15
4.95
2.4
Dia
F
F1
F2
G
1.70
1.70
5.20
2.7
L6
L5
L2
L7
L3
G1
H
10
10.4
D
L2
L3
L4
L5
L6
L7
Dia.
16 Typ.
0.63 Typ.
F1
F2
28.6
9.8
30.6
10.6
3.6
1.126
0.386
0.114
0.626
0.354
0.118
1.205
0.417
0.142
0.646
0.366
0.126
L4
2.9
F
E
15.9
9.00
3.00
16.4
9.30
3.20
G1
G
4/5
STPS16L45CT/CFP
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
Millimeters Inches
Min. Max.
4.40 4.60
REF.
Min.
Max.
A
H2
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
Dia
C
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
L5
L7
L6
L2
F2
D
F1
L9
L4
16.4 typ.
0.645 typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G1
E
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
Ordering type
Marking
Package
TO-220AB
Weight
Base qty
Delivery mode
STPS16L45CT STPS16L45CT
2g
2g
50
50
Tube
Tube
STPS16L45CFP STPS16L45CFP TO-220FPAB
■
■
■
■
Epoxy meets UL94,V0
Cooling method : C
Recommended torque value : 0.55 m.N
Maximum torque value : 0.70 m.N
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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