STPS1H100MF [STMICROELECTRONICS]
High voltage power Schottky rectifier; 高压功率肖特基整流器
| 型号： | STPS1H100MF |
| 厂家： | 
ST |
| 描述： | High voltage power Schottky rectifier |
| 文件： | 总7页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS1H100MF
High voltage power Schottky rectifier
Features
A
■ Negligible switching losses
■ High junction temperature capability
■ Low leakage current
K
■ Good trade-off between leakage current and
forward voltage drop
STmite flat
(DO222-AA)
■ Avalanche capability specified
Table 1.
Device summary
IF(AV)
Description
1 A
Schottky rectifier designed for high frequency
miniature switch mode power supplies such as
adaptors and on-board DC/DC convertors. This
device is packaged in STmite flat.
VRRM
100 V
175 °C
0.62 V
Tj (max)
VF (max)
May 2008
Rev 1
1/7
www.st.com
Characteristics
STPS1H100MF
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
A
IF(RMS) Forward current rms
2
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
Average forward current
Tc = 160 °C δ = 0.5
1
A
Surge non repetitive forward current tp = 10 ms sinusoidal
50
A
Repetitive peak reverse current
tp = 2 µs, F = I kHz square
1
1
A
Non-repetitive peak reverse current tp = 100 µs square
A
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature(1)
tp = 1 µs Tj = 25 °C
1500
W
°C
°C
V/µs
-65 to + 175
175
Tj
dV/dt
Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C)
10000
dPtot
---------------
1
-------------------------
1.
<
condition to avoid thermal runaway for a diode on its own heatsink
dTj
Rth(j – a)
Table 3.
Symbol
Thermal resistance
Parameter
Value
20
Unit
°C/W
Rth(j-c)
Junction to case
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
Min.
Typ
Max.
Unit
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
4
µA
mA
(1)
IR
Reverse leakage current
VR = VRRM
0.2
0.5
0.77
0.62
0.86
0.7
IF = 1 A
0.58
0.65
(2)
VF
Forward voltage drop
V
IF = 2 A
1. Pulse test: = 5 ms, δ < 2%
2. Pulse test: = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.08 IF (RMS)
2/7
STPS1H100MF
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
Average forward current versus
ambient temperature (δ = 0.5)
P
(W)
F(AV)
I
(A)
F(AV)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
δ=1
δ=0.5
Rth(j-a)=Rth(j-c)
δ=0.2
δ=0.1
δ=0.05
Rth(j-a)=250°C/W
T
T
=tp/T
tp
T (°C)
amb
δ
I
(A)
tp
F(AV)
=tp/T
δ
0
25
50
75
100
125
150
175
0.0
0.1
0.2
0.3
0.4
0.5
0.6 0.7
0.8
0.9
1.0
1.1
1.2
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
P
(t )
p
(1µs)
ARM
P
ARM
(T )
j
ARM
(25°C)
P
ARM
P
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0.01
T (°C)
j
t (µs)
p
0
0.001
25
50
75
100
125
150
0.01
0.1
1
10
100
1000
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Forward voltage drop versus
forward current
I
M
(A)
I (A)
FM
22
20
18
16
14
12
10
8
20.0
18.0
16.0
14.0
12.0
10.0
8.0
Tj=125 °C
(Maximum values)
Tc=25 °C
Tc=75 °C
Tj=125 °C
(Typical values)
6.0
Tc=125 °C
6
Tj=25 °C
(Maximum values)
4.0
I
M
4
2.0
t
2
V
(V)
FM
δ
=0.5
t(s)
0.0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
3/7
Characteristics
STPS1H100MF
Figure 7.
Relative variation of thermal
Figure 8.
Thermal resistance, junction to
impedance, junction to ambient,
versus pulse duration (epoxy
printed circuit board, copper
thickness = 35 µm, recommended
pad layout)
ambient, versus copper surface
under each lead (epoxy
printed board FR4,
copper thickness = 35 µm)
R
(°C/W)
Z
/R
th(j-a)
th(j-a) th(j-a)
250
225
200
175
150
125
100
75
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
Single pulse
25
2
t (s)
p
S
(cm )
CU
0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Figure 9.
Reverse leakage current versus
voltage applied (typical values)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values)
I (µA)
R
100 C(pF)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
F=1 MHz
V
OSC=30 mVRMS
Tj=25 °C
Tj=150 °C
Tj=125 °C
Tj=100 °C
Tj=75 °C
Tj=50 °C
Tj=25 °C
V (V)
R
V (V)
R
10
1
10
100
0
20
40
60
80
100
4/7
STPS1H100MF
Package information
2
Package information
●
Epoxy meets UL94, V0
®
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 5.
STmite flat dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Typ. Max. Min. Typ. Max.
A
b
0.80 0.85 0.95 0.031 0.033 0.037
0.40 0.55 0.65 0.016 0.022 0.026
L1
L
L2
E1
b2 0.70 0.85 1.00 0.027 0.033 0.039
D
b
b2
c
D
E
0.10 0.15 0.25 0.004 0.006 0.009
1.75 1.90 2.05 0.069 0.075 0.081
3.60 3.80 3.90 0.142 0.150 0.154
L3
E
c
A
E1 2.80 2.95 3.10 0.110 0.116 0.122
0.50 0.55 0.80 0.020 0.022 0.031
L
L1 2.10 2.40 2.60 0.083 0.094 0.102
L2 0.45 0.60 0.75 0.018 0.024 0.030
L3 0.20 0.35 0.50 0.008 0.014 0.020
Figure 11. STmite flat recommended footprint (all dimensions in mm)
0.85 0.63
2.00
0.65
0.65
0.95
1.95
4.13
5/7
Ordering information
STPS1H100MF
3
Ordering information
Table 6.
Ordering information
Order code
Marking
Package
STmite flat
Weight
Base qty
Delivery mode
STPS1H100MF
M11
16 mg
12000
Tape and reel
4
Revision history
Table 7.
Date
15-May-2008
Document revision history
Revision
Changes
1
First issue.
6/7
STPS1H100MF
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