STPS1H100U [STMICROELECTRONICS]
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器
| 型号： | STPS1H100U |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE POWER SCHOTTKY RECTIFIER |
| 文件： | 总6页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS1H100A/U
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
1 A
100 V
175 °C
0.62 V
Tj (max)
VF (max)
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
SMA
(JEDEC DO-214AC) (JEDEC DO-214AA)
STPS1H100A STPS1H100U
SMB
AVALANCHE RATED
DESCRIPTION
Schottky rectifier designed for high frequency
miniature Switched Mode Power Supplies such as
adaptators and on board DC/DC converters.
Packaged in SMA or SMB.
ABSOLUTE RATINGS
Symbol
(limiting values)
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
A
A
A
A
A
IF(RMS) RMS forward current
10
δ
IF(AV)
IFSM
IRRM
IRSM
Tstg
Average forward current
TL = 160°C = 0.5
1
Surge non repetitive forward current tp = 10 ms sinusoidal
50
µ
Repetitive peak reverse current
tp = 2 square F = 1kHz
1
1
µ
Non repetitive peak reverse current tp = 100 s square
Storage temperature range
°
- 65 to + 175
175
C
Tj
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
°C
µ
V/ s
dV/dt
10000
dPtot
dTj
1
<
* :
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
July 1999 - Ed: 3A
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STPS1H100A/U
THERMAL RESISTANCES
Symbol
Parameter
Value
30
Unit
°
Rth (j-l)
Junction to lead
SMA
SMB
C/W
25
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests Conditions
Min. Typ. Max.
Unit
°
µ
A
IR *
Reverse leakage current
Tj = 25 C
VR = VRRM
1
Tj = 125°C
0.2
0.5
0.77
0.62
0.86
0.7
mA
V
°
VF **
Forward voltage drop
Tj = 25 C
IF = 1 A
IF = 1 A
IF = 2 A
IF = 2 A
Tj = 125°C
0.58
0.65
°
Tj = 25 C
Tj = 125°C
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.54 IF(AV) + 0.08 IF (RMS)
Fig. 1:
average forward current.
Fig. 2:
Average forward current versus ambient
Average forward power dissipation versus
δ
temperature ( =0.5).
IF(av)(A)
PF(av)(W)
1.2
0.8
δ = 0.1
δ = 0.2
Rth(j-a)=Rth(j-l)
δ = 0.5
δ = 0.05
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
Rth(j-a)=120°C/W
0.8
0.6
0.4
0.2
0.0
δ = 1
Rth(j-a)=100°C/W
T
T
tp
=tp/T
IF(av) (A)
δ
tp
=tp/T
δ
Tamb(°C)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
20
40
60
80 100 120 140 160 180
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STPS1H100A/U
Fig. 3:
Fig. 4:
Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMA).
Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMB).
IM(A)
IM(A)
8
7
6
10
9
8
7
6
Ta=25°C
5
Ta=25°C
5
4
Ta=75°C
Ta=75°C
4
3
2
1
3
Ta=110°C
2
IM
Ta=110°C
IM
t
1
0
t
δ
=0.5
t(s)
t(s)
δ
=0.5
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5:
Fig. 6:
Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA).
Relative variation of thermal impedance
junction to ambient versus pulse duration (SMB).
Zth(j-a)/Rth(j-a)
Zth(j-a)/Rth(j-a)
1.00
1.00
δ = 0.5
δ=0.5
δ = 0.2
δ=0.2
δ = 0.1
δ=0.1
0.10
0.10
Single pulse
T
T
Single pulse
tp
=tp/T
tp
tp(s)
1E+0
=tp/T
δ
tp(s)
δ
0.01
1E-3
0.01
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-2
1E-1
1E+1
1E+2 5E+2
Fig. 7:
Fig. 8:
Junction capacitance versus reverse
voltage applied (typical values).
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
C(pF)
2E+2
1E+2
100
Tj=125°C
F=1MHz
Tj=25°C
1E+1
1E+0
1E-1
50
20
Tj=25°C
1E-2
VR(V)
VR(V)
1E-3
10
0
10 20 30 40 50 60 70 80 90 100
1
10
100
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STPS1H100A/U
Fig. 9:
Fig. 10:
Thermal resistance junction to ambient
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
versus copper surface under each lead (Epoxy
µ
µ
printed circuit board FR4, copper thickness: 35 m)
printed circuit board FR4, copper thickness: 35 m)
(SMB).
(SMA).
Rth(j-a) (°C/W)
Rth(j-a) (°C/W)
140
130
120
110
100
90
80
70
60
50
120
110
100
90
80
70
60
50
40
40
30
20
S(Cu) (cm²)
30
20
S(Cu) (cm²)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 11:
Forward voltage drop versus forward
current (maximum values).
IFM(A)
2E+1
1E+1
Tj=125°C
Tj=25°C
1E+0
1E-1
1E-2
VFM(V)
0.6 0.8
0.0
0.2
0.4
1.0
1.2
1.4
1.6
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STPS1H100A/U
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
Millimeters Inches
Min. Min.
E1
REF.
Max.
2.70
0.20
1.65
0.41
5.60
4.60
2.95
1.60
Max.
0.106
0.008
0.065
0.016
0.220
0.181
0.116
0.063
D
A1
A2
b
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
E
c
E
A1
E1
D
A2
C
L
b
L
FOOT PRINT
(in millimeters)
1.65
1.45
2.40
1.45
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STPS1H100A/U
PACKAGE MECHANICAL DATA
SMB
DIMENSIONS
Millimeters Inches
E1
REF.
Min.
Max.
Min.
Max.
D
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
E
c
E
A1
E1
D
A2
C
L
b
L
FOOT PRINT
(in millimeters)
2.3
1.52
2.75
1.52
Ordering type
STPS1H100A
STPS1H100U
Marking
S11
Package
Weight
0.068g
0.107g
Base qty
5000
Delivery mode
Tape & reel
SMA
SMB
G11
2500
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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