STPS1L20 [ETC]

LOW DROP POWER SCHOTTKY RECTIFIER ; 电力低压降肖特基整流器


型号：	STPS1L20
厂家：	ETC
描述：	LOW DROP POWER SCHOTTKY RECTIFIER 电力低压降肖特基整流器
文件：	总5页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS1L20M

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

1 A

20 V

Tj (max)

V_F(max)

150°C

0.37 V

FEATURES AND BENEFITS

■

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW FORWARD VOLTAGE DROP FOR

HIGHER

BATTERY LIFE

LOW THERMAL RESISTANCE

AVALANCHE CAPABILITY SPECIFIED

EFFICIENCY

EXTENDED

■

ST Mite

(DO-216AA)

DESCRIPTION

Single Schottky rectifier suited for switch mode

power supplies and high frequency DC to DC

converters.

Packaged in ST Mite, this device is intended for

use in low voltage, high frequency inverters, free

wheeling and polarity protection applications. Due

to the small size of the package this device fits

battery powered equipment (cellular, notebook,

PDA’s, printers) as well chargers and PCMCIA

cards.

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

V_RRMRepetitive peak reverse voltage

I_F(RMS)RMS forward current

I_F(AV)

I_FSM

P_ARMRepetitive peak avalanche power

Average forward current

Tc = 140°C δ = 0.5

Surge non repetitive forward current 10 ms sinusoidal

tp = 1µs Tj = 25°C

1400

T_stg

Storage temperature range

Maximum operating junction temperature*

- 65 to + 150

150

°C

V/µs

dV/dt Critical rate of rise of reverse voltage (rated Vr, Tj = 25°C)

10000

dPtot

dTj

* :

thermal runaway condition for a diode on its own heatsink

Rth(j − a)

July 2003 - Ed : 2A

1/5

STPS1L20M

THERMAL RESISTANCE

Symbol

Parameter

Value

Unit

°C/W

R_{th (j-c)}

Junction to case

R_{th (j-a)}

Junction to ambient

250

* Monted with minimum recommended pad size, PC board FR4.

STATIC ELECTRICAL CHARACTERISTICS

Value

Typ.

0.015

0.9

Symbol

Parameter

Tests conditions

Unit

Min.

Max.

I_R*

Reverse leakage current Tj = 25°C

V_R= V_RRM

V_R= 10 V

V_R= 5 V

I_F= 1A

0.075

4.5

Tj = 85°C

Tj = 25°C

Tj = 85°C

Tj = 25°C

Tj = 85°C

0.005

0.45

0.003

0.3

0.035

2.5

0.025

1.6

V_F*

Forward voltage drop

Tj = 25°C

Tj = 85°C

Tj = 25°C

Tj= 85°C

0.38

0.32

0.46

0.42

0.43

0.37

0.53

0.49

I_F= 3 A

Pulse test : * tp ≤ 380 µs, δ ≤ 2%

To evaluate the conduction losses use the following equation :

P = 0.34 x I_F(AV)+ 0.07 I_{F (RMS)}

2/5

STPS1L20M

Fig. 2: Average forward current versus ambient

temperature (δ = 0.5)

Fig. 1: Conduction losses versus average current.

IF(AV)(A)

PF(AV)(W)

0.50

1.1

R_th(j-a)=R_th(j-a)

δ = 0.2

δ = 0.5

δ = 0.1

1.0

0.9

0.8

0.7

0.6

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

δ = 0.05

δ = 1

R_th(j-a)=270°C/W

0.5

0.4

0.3

0.2

0.1

Tamb(°C)

IF(AV)(A)

=tp/T

0.0

100

125

150

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

Fig. 3: Normalized avalanche power derating ver-

sus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

IM(A)

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

δ = 0.5

T_C=25°C

0.5

0.4

T_C=75°C

0.3

δ = 0.2

T_C=125°C

0.2

δ = 0.1

0.1

t(s)

Single pulse

tP(s)

1.E-01

=tp/T

δ=0.5

0.0

1.E-04

1.E-03

1.E-02

1.E-03

1.E-02

1.E-01

1.E+00

3/5

STPS1L20M

Fig. 8: Reverse leakage current versus junction

temperature (typical values).

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

IR(mA)

1.E+02

IR(mA)

1.E+02

T_j=150°C

V_R=20V

T_j=125°C

1.E+01

1.E+00

1.E-01

1.E-02

1.E+01

T_j=100°C

1.E+00

T_j=75°C

1.E-01

T_j=50°C

1.E-02

T_j=25°C

Tj(°C)

VR(V)

1.E-03

100

125

150

Fig. 10: Forward voltage drop versus forward cur-

rent.

Fig. 9: Junction capacitance versus reverse volt-

age applied (typical values).

IFM(A)

2.0

C(pF)

1000

F=1MHz

1.8

V_osc=30mV

T_j=25°C

T_j=85°C

(Maximum values)

1.6

1.4

1.2

T_j=85°C

(Typical values)

100

1.0

0.8

0.6

0.4

T_j=25°C

(Maximum values)

0.2

VR(V)

VFM(V)

0.0

100

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

Fig. 11: Thermal resistance junction to ambient

versus copper surface under tab (epoxy printed

board FR4, Cu = 35µm, typical values).

R^th(j-a)(°C/W)

250

200

150

100

S(mm²)

100

120

140

160

180

200

4/5

STPS1L20M

PACKAGE MECHANICAL DATA

ST Mite

DIMENSIONS

Millimeters Inches

REF.

Min. Typ. Max. Min. Typ. Max.

0.85 1.00 1.15 0.033 0.039 0.045

0.10

0.004

0.025

0.039

0.010

0.40

0.70

0.10

0.65 0.016

1.00 0.027

0.25 0.004

1.75 1.90 2.05 0.069 0.075 0.081

3.60 3.75 3.90 0.142 0.148 0.154

0.50 0.63 0.80 0.047 0.025 0.031

1.20 1.35 1.50 0.047 0.053 0.059

0° to 6°

0.50 ref (Typ.)

0.07

0.019 ref (Typ.)

0.003

R1 0.07

Note:

The anode is connected to the longer tab

The cathode is connected to the shorter tab (heatsink)

FOOTPRINT (dimensions in mm)

2.67

0.762

2.54

1.27

0.635

Type

Marking

Package

ST Mite

Weight

Base qty

12000

Delivery mode

STPS1L20M

1L2

15.5 mg

Tape & reel

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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5/5

STPS1L20 [ETC]

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