UC1610N [ETC]
BRIDGE/RING DIODE ARRAY|SO ; BRIDGE / RING二极管阵列| SO\n
| 型号： | UC1610N |
| 厂家： | 
ETC |
| 描述： | BRIDGE/RING DIODE ARRAY|SO
|
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ꢀ ꢁꢂ ꢃꢂ ꢄ
ꢀ ꢁꢅ ꢃꢂ ꢄ
SLUS339A – JUNE 1993 – REVISED MAY 2001
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FEATURES
DESCRIPTION
D
D
D
D
D
D
Monolithic Eight-Diode Array
Exceptional Efficiency
Low Forward Voltage
Fast Recovery Time
High Peak Current
Small Size
This eight-diode array is designed for
high-current, low duty-cycle applications typical of
flyback voltage clamping for inductive loads. The
dual bridge connection makes this device
particularly applicable to bipolar driven stepper
motors.
The use of Schottky diode technology features
high efficiency through lowered forward voltage
drop and decreased reverse recovery time.
This single monolithic chip is fabricated in both
hermetic CERDIP and copper-leaded plastic
packages. The UC1610 in ceramic is designed for
–55°C to 125°C environments but with reduced
peak current capability. The UC2610 in plastic and
ceramic is designed for –25°C to 125°C
environments also with reduced peak current
capability; while the UC3610 in plastic has higher
current rating over a 0°C to 70°C temperature
range.
AVAILABLE OPTIONS
Packaged Devices
DIL (J)
T
= T
J
A
SOIC Wide (DW)
UC1610DW
DIL (N)
–55°C to 125°C
–25°C to 125°C
0°C to 70°C
UC1610J
UC2610J
UC3610J
UC1610N
UC2610N
UC3610N
UC2610DW
UC3610DW
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Copyright 2001, Texas Instruments Incorporated
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ꢝ ꢡ ꢞ ꢝꢖ ꢗꢫ ꢙꢘ ꢜ ꢤꢤ ꢢꢜ ꢚ ꢜ ꢛ ꢡ ꢝ ꢡ ꢚ ꢞ ꢦ
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1
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ꢀ ꢁꢂꢃ ꢂꢄ
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SLUS339A – JUNE 1993 – REVISED MAY 2001
N OR J PACKAGE
TOP VIEW
DW PACKAGE
TOP VIEW
†
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V
Peak forward current
UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC2610 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A
UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A
Power dissipation at T = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
A
Storage temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
stg
Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
†
‡
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Consult packaging section of databook for thermal limitations and considerations of package.
electrical characteristics, all specifications apply to each individual diode, T = 25°C, T = T ,
J
A
J
(except as noted)
PARAMETER
TEST CONDITIONS
MIN
0.35
0.8
TYP
0.5
MAX UNITS
I
I
= 100 mA
= 1 A
0.7
1.3
0.1
1.0
V
V
F
Forward voltage drop
Leakage current
1.0
0.01
0.1
15
F
V
V
= 40 V
= 40 V,
mA
mA
ns
ns
pF
R
T
J
= 100°C
R
Reverse recovery
Forward recovery
Junction capacitance
0.5 A forward to 0.5 A reverse
1 A forward to 1.1 V recovery
30
V
= 5 V
70
R
NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes.
2
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ꢀ ꢁꢂ ꢃꢂ ꢄ
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SLUS339A – JUNE 1993 – REVISED MAY 2001
APPLICATION INFORMATION
REVERSE CURRENT
FORWARD CURRENT
vs
vs
VOLTAGE
VOLTAGE
5.0
1000
500
3.0
2.0
300
200
1.0
0.5
T
= 125 °C
100
50
J
0.3
0.2
T
= –55 °C
°C
0.1
J
30
20
0.05
0.03
0.02
T
= 25
J
10
5
0.01
T
= 25
°C
J
T
= 75 °C
J
0.005
3
2
T
= 125
°C
0.003
0.002
J
0.001
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
10
20
30
40
50
Forward Voltage – V
Reverse Voltage – V
Figure 1
Figure 2
FORWARD RECOVERY CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
°C
T = 25
I
= 0.5 A
A
F
°C
T = 25
A
1.1 V
Diode Voltage
T
FR
(6 ns)
0 A
0 A
I = 1 A
F
I = 0.5 A
Diode Current
R
T
RR
(4.6 ns)
0 A
Time, 2 ns/DIV
Time, 2 ns/DIV
Figure 3
Figure 4
3
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Copyright 2001, Texas Instruments Incorporated
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