FZ800R17KF6CB2 [EUPEC]

IGBT-Modules; IGBT模块


型号：	FZ800R17KF6CB2
厂家：	EUPEC GMBH
描述：	IGBT-Modules IGBT模块双极性晶体管
文件：	总9页 (文件大小：118K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode

1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

V_CES

1700

T_C= 80 °C

I_C,nom.

I_C

800

Kollektor-Dauergleichstrom

DC-collector current

T_C= 25 °C

1300

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t_P= 1 ms, T_C= 80°C

T_C=25°C, Transistor

I_CRM

P_tot

V_GES

I_F

1600

6,6

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

+/- 20V

800

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

t_P= 1 ms

I_FRM

1600

170

Grenzlastintegral der Diode

I²t - value, Diode

I²t

kA²s

V_R= 0V, t_p= 10ms, T_Vj= 125°C

RMS, f = 50 Hz, t = 1 min.

Isolations-Prüfspannung

insulation test voltage

V_ISOL

Charakteristische Werte / Characteristic values

min.

typ. max.

Transistor / Transistor

I_C= 800A, V_GE= 15V, T_vj= 25°C

V_{CE sat}

2,6

3,1

3,6

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I_C= 800A, V_GE= 15V, T_vj= 125°C

Gate-Schwellenspannung

gate threshold voltage

I_C= 60mA, V_CE= V_GE, T_vj= 25°C

V_GE(th)

4,5

5,5

9,6

6,5

Gateladung

gate charge

V_GE= -15V ... +15V

Q_G

µC

Eingangskapazität

input capacitance

f = 1MHz,T_vj= 25°C,V_CE= 25V, V_GE= 0V

C_ies

Rückwirkungskapazität

reverse transfer capacitance

C_res

I_CES

2,7

V_CE= 1700V, V_GE= 0V, T_vj= 25°C

V_CE= 1700V, V_GE= 0V, T_vj= 125°C

0,02

1,5

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current

V_CE= 0V, V_GE= 20V, T_vj= 25°C

I_GES

400

prepared by: Alfons Wiesenthal

date of publication: 04.08.2000

revision: 2 (Series)

approved by: Chr. Lübke; 11.08.2000

1(8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Charakteristische Werte / Characteristic values

min.

typ. max.

Transistor / Transistor

I_C= 800A, V_CE= 900V

Einschaltverzögerungszeit (ind. Last)

turn on delay time (inductive load)

t_d,on

_GE= ±15V, R_G= 1,8Ω, T_vj= 25°C

0,3

µs

V_GE= ±15V, R_G= 1,8Ω, T_vj= 125°C

I_C= 800A, V_CE= 900V

Anstiegszeit (induktive Last)

rise time (inductive load)

t_r

V_GE= ±15V, R_G= 1,8Ω, T_vj= 25°C

0,14

µs

_GE= ±15V, R_G= 1,8Ω, T_vj= 125°C

I_C= 800A, V_CE= 900V

_GE= ±15V, R_G= 1,8Ω, T_vj= 25°C

_GE= ±15V, R_G= 1,8Ω, T_vj= 125°C

I_C= 800A, V_CE= 900V

_GE= ±15V, R_G= 1,8Ω, T_vj= 25°C

_GE= ±15V, R_G= 1,8Ω, T_vj= 125°C

I_C= 800A, V_CE= 900V, V_GE= 15V

_G= 1,8Ω, T_vj= 125°C, L_S= 50nH

Abschaltverzögerungszeit (ind. Last)

turn off delay time (inductive load)

t_d,off

1,1

µs

Fallzeit (induktive Last)

fall time (inductive load)

t_f

0,11

0,12

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

E_on

E_off

300

325

mWs

I_C= 800A, V_CE= 900V, V_GE= 15V

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

R_G= 1,8Ω, T_vj= 125°C, L_S= 50nH

_P≤ 10µsec, V_GE≤ 15V

Kurzschlußverhalten

SC Data

I_SC

T_Vj≤125°C, V_CC=1000V, V_CEmax=V_CES-L_sCE·dI/dt

3200

Modulinduktivität

stray inductance module

L_sCE

Modulleitungswiderstand, Anschlüsse - Chip

module lead resistance, terminals - chip

R_CC´+EE´

pro Zweig / per arm

0,08

mΩ

Charakteristische Werte / Characteristic values

min.

typ. max.

Diode / Diode

I_F= 800A, V_GE= 0V, T_vj= 25°C

Durchlaßspannung

V_F

I_RM

Q_r

2,1

2,5

forward voltage

I_F= 800A, V_GE= 0V, T_vj= 125°C

I_F= 800A, - di_F/dt = 6600A/µsec

V_R= 900V, VGE = -10V, T_vj= 25°C

Rückstromspitze

peak reverse recovery current

800

920

V_R= 900V, VGE = -10V, T_vj= 125°C

I_F= 800A, - di_F/dt =6600A/µsec

V_R= 900V, VGE = -10V, T_vj= 25°C

V_R= 900V, VGE = -10V, T_vj= 125°C

I_F= 800A, - di_F/dt = 6600A/µsec

V_R= 900V, VGE = -10V, T_vj= 25°C

V_R= 900V, VGE = -10V, T_vj= 125°C

Sperrverzögerungsladung

recovered charge

170

300

µAs

Abschaltenergie pro Puls

reverse recovery energy

E_rec

mWs

160

2(8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Thermische Eigenschaften / Thermal properties

min.

typ. max.

R_thJC

Transistor / transistor, DC

Diode/Diode, DC

0,019

0,034

K/W

Innerer Wärmewiderstand

thermal resistance, junction to case

pro Modul / per module

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

R_thCK

0,008

K/W

°C

λ_Paste= 1 W/m*K

λ_grease= 1 W/m*K

Höchstzulässige Sperrschichttemperatur

maximum junction temperature

T_vj

150

125

Betriebstemperatur

operation temperature

T_op

-40

°C

Lagertemperatur

storage temperature

T_stg

°C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation

AlN

Kriechstrecke

creepage distance

Luftstrecke

clearance

CTI

275

comperative tracking index

Anzugsdrehmoment f. mech. Befestigung

mounting torque

terminals M4

terminals M8

Anzugsdrehmoment f. elektr. Anschlüsse

terminal connection torque

8 - 10

Gewicht

weight

1050

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Ausgangskennlinie (typisch)

Output characteristic (typical)

I_C= f (V_CE)

V_GE= 15V

1800

1600

1400

1200

1000

800

600

400

200

Tvj = 25°C

Tvj = 125°C

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

5,0

V_CE[V]

Ausgangskennlinienfeld (typisch)

Output characteristic (typical)

I_C= f (V_CE)

T_vj= 125°C

1800

1600

1400

1200

1000

800

600

400

200

vGE = 20V

vGE = 15V

vGE = 12V

vGE = 10V

vGE = 9V

vGE = 8V

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

4,0

4,5

5,0

V_CE[V]

4(8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Übertragungscharakteristik (typisch)

Transfer characteristic (typical)

I_C= f (V_GE)

V_CE= 20V

1800

1600

1400

1200

1000

800

600

400

200

Tj = 25°C

Tj = 125°C

V_GE[V]

Durchlaßkennlinie der Inversdiode (typisch)

I_F= f (V_F)

Forward characteristic of inverse diode (typical)

1800

1600

1400

1200

1000

800

600

400

200

Tvj=25°C

Tvj=125°C

0,0

0,5

1,0

1,5

2,0

2,5

3,0

V_F[V]

5(8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Schaltverluste (typisch)

Switching losses (typical)

E_on= f (I_C) , E_off= f (I_C) , E_rec= f (I_C)

R_gon= R_goff=1,8 Ω, V_CE= 900V, T_j= 125°C, V_GE= ± 15V

1200

Eoff

EON

Erec

1000

800

600

400

200

400

600

800

1000

1200

1400

1600

1800

I_C[A]

Schaltverluste (typisch)

Switching losses (typical)

1000

E_on= f (R_G) , E_off= f (R_G) , E_rec= f (R_G)

I_C= 800A , V_CE= 900V , T_j= 125°C, V_GE= ± 15V

900

800

700

600

500

400

300

200

100

Eoff

EON

Erec

R_G[Ω]

6(8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Transienter Wärmewiderstand

Transient thermal impedance

Z_thJC= f (t)

0,1

0,01

Zth:Diode

Zth:IGBT

0,001

0,01

0,1

100

t [sec]

r_i[K/kW]

: IGBT

: Diode

1,82

0,003

3,35

0,003

8,99

0,05

3,8

4,39

0,95

6,21

0,75

τ_i[sec]

r_i[K/kW]

τ_i[sec]

0,1

18,22

0,045

6,22

0,45

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) R_g= 1,8 Ohm, T_vj= 125°C

1800

1600

1400

1200

IC,Modul

IC,Chip

1000

800

600

400

200

400

600

800

1000

1200

1400

1600

1800

V_CE[V]

7 (8)

FZ800R17KF6CB2

Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 800 R 17 KF6C B2

Äußere Abmessungen / external dimensions

8(8)

FZ800R17KF6CB2

Terms & Conditions of Usage

Attention

The present product data is exclusively subscribed to technically experienced

staff. This Data Sheet is describing the specification of the products for which a

warranty is granted exclusively pursuant the terms and conditions of the supply

agreement. There will be no guarantee of any kind for the product and its

specifications. Changes to the Data Sheet are reserved.

You and your technical departments will have to evaluate the suitability of the

product for the intended application and the completeness of the product data

with respect to such application. Should you require product information in

excess of the data given in the Data Sheet, please contact your local Sales Office

via “www.eupec.com / sales & contact”.

Warning

Due to technical requirements the products may contain dangerous substances.

For information on the types in question please contact your local Sales Office via

“www.eupec.com / sales & contact”.

FZ800R17KF6CB2 [EUPEC]

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