FDPF17N60NT [FAIRCHILD]
N-Channel MOSFET 600V, 17A, 0.34Ω; N沟道MOSFET 600V ， 17A ， 0.34Ω
| 型号： | FDPF17N60NT |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET 600V, 17A, 0.34Ω |
| 文件： | 总9页 (文件大小：727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2009
UniFETTM
FDP17N60N / FDPF17N60NT
N-Channel MOSFET
600V, 17A, 0.34Ω
Features
Description
•
•
•
•
•
•
RDS(on) = 0.29Ω ( Typ.)@ VGS = 10V, ID = 8.5A
Low Gate Charge ( Typ. 48nC)
Low Crss ( Typ. 23pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
•
RoHS Compliant
D
G
TO-220
FDP Series
TO-220F
FDPF Series
G D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP17N60N FDPF17N60NT Units
Drain to Source Voltage
Gate to Source Voltage
600
±30
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
17
10.2
68
17*
10.2*
68*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
838
17
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
24.5
10
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
245
2.0
62.5
0.5
PD
Power Dissipation
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Units
FDP17N60N FDPF17N60NT
RθJC
RθCS
RθJA
0.51
-
2.0
-
Thermal Resistance, Case to Heat Sink Typ.
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2009 Fairchild Semiconductor Corporation
FDP17N60N/FDPF17N60NT Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDP17N60N
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP17N60N
FDPF17N60NT
-
-
-
-
50
50
FDPF17N60NT
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V, TC = 25oC
600
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, Referenced to 25oC
-
-
0.8
V/oC
V
DS = 600V, VGS = 0V
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µA
VDS = 480V, VGS = 0V,TC = 150oC
-
-
10
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250µA
3.0
-
5.0
0.34
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
VGS = 10V, ID = 8.5A
-
-
0.29
21
VDS = 20V, ID = 8.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
2285
310
23
3040
410
35
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
48
65
V
V
DS = 480V ID = 17A
GS = 10V
13
-
Qgd
Gate to Drain “Miller” Charge
-
20
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
48
79
106
168
266
134
ns
ns
ns
ns
VDD = 300V, ID = 17A
GS = 10V, RGEN = 25Ω
V
128
62
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
74
68
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 17A
-
V
575
7.2
ns
µC
VGS = 0V, ISD = 17A
dIF/dt = 100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.8mH, I = 17A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 17A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP17N60N/FDPF17N60NT Rev. A
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
200
VGS = 15.0 V
*Notes:
100
10.0 V
1. 250µs Pulse Test
8.0 V
2. TC = 25oC
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
150oC
-55oC
25oC
10
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
0.1
0.1
4
5
6
7
8
9
1
10
20
VGS, Gate-Source Voltage[V]
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
0.6
0.5
0.4
0.3
0.2
200
100
150oC
25oC
VGS = 10V
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250µs Pulse Test
1
0.2
0
10
20
30
40
50
0.4
0.8
1.2
1.4
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
10000
Figure 6. Gate Charge Characteristics
10
VDS = 120V
VDS = 300V
Ciss
8
6
4
2
0
VDS = 480V
1000
100
10
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 17A
40
0.1
1
10
30
0
10
20
30
50
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
FDP17N60N/FDPF17N60NT Rev. A
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
1.18
1.15
3.0
2.5
2.0
1.5
1.0
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.90
0.5
2. ID = 250µA
2. ID = 8.5A
0.85
0.0
-75 -50
-75 -50
0
50
100
150
0
50
100 150
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
-FDPF17N60NT
Figure 10. Maximum Drain Current
vs. Case Temperature
200
100
20
15
10
5
10µs
100µs
1ms
10ms
10
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
0.1
0.01
3. Single Pulse
0
25
1
10
100
1000
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
-FDPF17N60NT
10
1
0.5
0.2
0.1
0.05
0.02
PDM
*Notes:
0.1
t1
0.01
t2
1. ZθJC(t) = 2.0oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
0.003
10-5
10-4
10-3
10-2
10-1
1
10
102
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP17N60N/FDPF17N60NT Rev. A
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
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FDP17N60N/FDPF17N60NT Rev. A
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
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p
www.fairchildsemi.com
FDP17N60N/FDPF17N60NT Rev. A
6
Mechanical Dimensions
TO-220
FDP17N60N/FDPF17N60NT Rev. A
7
www.fairchildsemi.com
Package Dimensions
TO-220F Potted
* Front/Back Side Isolation Voltage : 4000V
Dimensions in Millimeters
www.fairchildsemi.com
FDP17N60N/FDPF17N60NT Rev. A
8
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Definition
Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I40
FDP17N60N/FDPF17N60NT Rev. A
9
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