FDPF18N50 [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET
| 型号： | FDPF18N50 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：1033K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2006
TM
UniFET
FDP18N50 / FDPF18N50
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
Low gate charge ( typical 45 nC)
Low Crss ( typical 25 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
TO-220F
FDPF Series
S
TO-220
FDP Series
G D
S
G
D S
Absolute Maximum Ratings
Symbol
Parameter
FDP18N50 FDPF18N50
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
18
10.8
18 *
10.8 *
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
72
72 *
A
V
VGSS
EAS
IAR
Gate-Source voltage
±30
945
18
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
23
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
235
58
W
- Derate above 25°C
1.88
0.47
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP18N50 FDPF18N50
Unit
°C/W
°C/W
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.53
0.5
2.15
--
RθCS
RθJA
62.5
62.5
©2006 Fairchild Semiconductor Corporation
FDP18N50 / FDPF18N50 Rev. A
1
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Package Marking and Ordering Information
Device Marking
FDP18N50
Device
FDP18N50
FDPF18N50
Package
TO-220
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF18N50
TO-220F
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
D = 250µA, Referenced to 25°C
500
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
DS = 400V, TC = 125°C
--
--
--
--
1
10
µA
µA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
3.0
--
--
0.220
25
5.0
0.265
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 9A
(Note 4)
gFS
Forward Transconductance
VDS = 40V, ID = 9A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2200
330
25
2860
430
40
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 18A
--
--
--
--
--
--
--
55
165
95
120
340
200
190
60
ns
ns
RG = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
90
ns
Qg
VDS = 400V, ID = 18A
GS = 10V
45
nC
nC
nC
V
Qgs
Qgd
12.5
19
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
18
72
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 18A
--
V
VGS = 0V, IS = 18A
500
5.4
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.2mH, I = 18A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 18A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP18N50 / FDPF18N50 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
102
101
100
VGS
102
101
100
10-1
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
150oC
25oC
-55oC
* Notes :
1. 250µs Pulse Test
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
o
2. TC = 25 C
10-1
100
101
2
4
6
8
10 12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
100
0.6
0.5
VGS = 10V
0.4
0.3
VGS = 20V
150oC
25oC
0.2
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
o
* Note : TJ = 25 C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
12
C
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
rss = Cgd
10
8
4000
3000
2000
1000
0
VDS = 100V
VDS = 250V
Coss
VDS = 400V
C
iss
6
4
* Note :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Note : ID = 18A
0
-1
10
100
101
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
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FDP18N50 / FDPF18N50 Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
2. ID = 250µA
0.5
2. ID = 9 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9-1. Maximum Safe Operating Area
- FDP18N50
Figure 9-2. Maximum Safe Operating Area
- FDPF18N50
102
102
10 µs
10 µs
100 µs
1 ms
10 ms
100 ms
100 µs
1 ms
101
101
100
10-1
10-2
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
DC
100
DC
* Notes :
1. TC = 25 o
-1
10
* Notes :
1. TC = 25 o
C
C
2. TJ = 150 o
C
2. TJ = 150 o
C
3. Single Pulse
3. Single Pulse
-2
10
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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FDP18N50 / FDPF18N50 Rev. A
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP18N50
1 0 0
D = 0.5
0.2
1 0 -1
PDM
0.1
t1
t2
0.05
*
N o te s
1 . θ JC (t)
2 . D u ty F a cto r, D = t1/t2
3 . T JM T C P D M θ JC (t)
:
0.02
0.01
o
Z
= 0 .5 3 C /W M a x.
1 0 -2
-
=
* Z
single p ulse
1 0 -3
1 0 -5
1 0 -4
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11-2. Transient Thermal Response Curve - FDPF18N50
1 0 0
D = 0.5
0.2
0.1
PDM
0.05
1 0 -1
t1
t2
0.02
0.01
*
N o te s
1 . Z θ JC (t)
2 . D u ty F a cto r, D = t1/t2
3 . T JM T C P D M Z θ JC (t)
:
o
=
2 .1 5 C /W M a x.
1 0 -2
-
=
*
sing le pulse
1 0 -3
1 0 -5
1 0 -4
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
5
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FDP18N50 / FDPF18N50 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FDP18N50 / FDPF18N50 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP18N50 / FDPF18N50 Rev. A
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
ø3.60 0.10
–0.05
1.27 0.10
1.52 0.10
0.80 0.10
+0.10
–0.05
0.50
2.40 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
10.00 0.20
8
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FDP18N50 / FDPF18N50 Rev. A
Mechanical Dimensions
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
#1
0.35 0.10
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
2.54TYP
[2.54 0.20]
[2.54 0.20]
9.40 0.20
9
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FDP18N50 / FDPF18N50 Rev. A
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
10
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FDP18N50 / FDPF18N50 Rev. A
相关型号：
FDPF18N50T
Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN
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