FDW254PZ_08 [FAIRCHILD]
P-Channel 1.8V Specified PowerTrench MOSFET; P沟道1.8V指定的PowerTrench MOSFET型号: | FDW254PZ_08 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | P-Channel 1.8V Specified PowerTrench MOSFET |
文件: | 总5页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
July 2008
FDW254PZ
P-Channel 1.8V Specified PowerTrenchÒ MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
·
–9.2 A, –20 V.
RDS(ON)
RDS(ON)
=
=
12 mW @ VGS = –4.5 V
15 mW @ VGS = –2.5 V
RDS(ON) = 21.5 mW @ VGS = –1.8 V
·
Rds ratings for use with 1.8 V logic
Applications
·
·
ESD protection diode
Low gate charge
·
·
·
·
Load switch
Motor drive
·
High performance trench technology for extremely
low RDS(ON)
DC/DC conversion
Power management
·
Low profile TSSOP-8 package
5
6
7
8
4
3
2
1
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–20
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
±8
(Note 1)
–9.2
–50
PD
Power Dissipation
(Note 1a)
(Note 1b)
1.4
1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
RqJA
°C/W
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
254PZ
FDW254PZ
13’’
12mm
2500 units
FDW254PZ Rev C1 (W)
Ó2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
–0.4
–50
V
VGS = 0 V,
ID = –250 mA
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
–11
ID = –250 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
VDS = 0 V
–1
mA
mA
IGSS
Gate–Body Leakage
VGS = ±8 V,
±10
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.6
2
–1.5
V
VDS = VGS
,
ID = –250 mA
DVGS(th)
DTJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8 V,
ID = –9.2 A
ID = –7.9 A
ID = –6.5 A
mW
9
12
15
21.5
18
11
14
12
VGS=–4.5 V, ID =–9.2 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –9.2 A
A
S
Forward Transconductance
54
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
5880
990
560
4.9
pF
pF
pF
W
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
ID = –1 A,
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
15
27
27
ns
ns
VDD = –10 V,
VGS = –4.5 V, RGEN = 6 W
210
100
60
336
160
96
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = –10 V,
VGS = –4.5 V
ID = –9.2 A,
7
13
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.2
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.2 A (Note 2)
–0.5
trr
Reverse Recovery Time
35
21
ns
IF = –9.2 A,
diF/dt = 100 A/µs
Qrr
Reverse Recovery Charge
nC
Notes:
1.
RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
a)
b)
R
R
qJA is 96°C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
qJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < ms, Duty cycle < 2.0%.
FDW254PZ Rev. C1 (W)
Typical Characteristics
60
2.8
2.6
2.4
2.2
2
VGS = -4.5V
-2.5V
50
VGS = - 1.8V
-3.5V
-3.0V
40
30
20
10
0
-2.0V
-2.0V
1.8
1.6
1.4
1.2
1
-1.8V
-2.5V
-3.0V
-3.5V
40
-4.5V
50
0.8
0
0.5
1
1.5
2
2.5
150
2.5
0
10
20
30
60
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
0.035
ID = -9.2A
VGS = - 4.5V
ID = -4.6A
1.4
1.3
1.2
1.1
1
0.03
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.9
0.8
0.7
0.005
-50
-25
0
25
50
75
100
125
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
60
50
40
30
20
10
0
VDS = -5V
TA = -55oC
25oC
125oC
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0.5
1
1.5
2
0
0.2
0.4
0.6
0.8
1
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW254PZ Rev. C1 (W)
Typical Characteristics
5
8000
7000
6000
5000
4000
3000
2000
1000
0
ID = -9.2A
f = 1 MHz
VGS = 0 V
VDS = -5V
-10V
4
3
2
1
0
CISS
-15V
COSS
CRSS
0
10
20
30
40
50
60
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
100ms
SINGLE PULSE
RqJA = 114°C/W
TA = 25°C
1ms
10ms
100ms
1s
RDS(ON) LIMIT
40
30
20
10
0
10s
DC
1
VGS = -4.5V
SINGLE PULSE
RqJA = 114oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) * RqJA
0.2
R
qJA = 114oC/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW254PZ Rev. C1(W)
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not intended to be an exhaustive list of all such trademarks.
®
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®
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®
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®
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®
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™
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Datasheet contains the design specifications for product development. Specifications
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Rev. I35
相关型号:
FDW254P_NL
Power Field-Effect Transistor, 9.2A I(D), 20V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
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