FDW254P_08 [FAIRCHILD]
P-Channel 1.8V Specified PowerTrench MOSFET; P沟道1.8V指定的PowerTrench MOSFET
| 型号： | FDW254P_08 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 文件： | 总5页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2008
FDW254P
P-Channel 1.8V Specified PowerTrench® MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
• –9.2 A, –20 V.
RDS(ON) = 12 mΩ @ VGS = –4.5 V
RDS(ON) = 15 mΩ @ VGS = –2.5 V
RDS(ON) = 21.5 mΩ @ VGS = –1.8 V
• Rds ratings for use with 1.8 V logic
• Low gate charge
Applications
• Load switch
• High performance trench technology for extremely
low RDS(ON)
• Motor drive
• DC/DC conversion
• Power management
• Low profile TSSOP-8 package
D
S
S
5
6
7
8
4
3
2
1
D
G
S
S
D
TSSOP-8
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
V
–20
8
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
(Note 1)
–9.2
–50
PD
Power Dissipation
(Note 1a)
(Note 1b)
1.3
W
0.6
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
–55 to +150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
96
RθJA
°C/W
208
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
254P
FDW254P
13’’
12mm
2500 units
FDW254P Rev D1 (W)
©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–11
ID = –250 µA, Referenced to 25°C
mV/°C
IDSS
VDS = –16 V, VGS = 0 V
–1
µA
nA
nA
IGSSF
IGSSR
VGS = –8 V,
VGS = 8 V
VDS = 0 V
VDS = 0 V
–100
100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
–0.4
–50
–0.6
2
–1.5
V
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
mV/°C
mΩ
VGS = –4.5 V,
ID = –9.2 A
ID = –7.9 A
ID = –6.5 A
9
12
15
21.5
18
V
V
V
GS = –2.5 V,
GS = –1.8 V,
11
14
12
GS=–4.5 V, ID =–9.2 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V,
VDS = –5 V
ID = –9.2 A
A
S
Forward Transconductance
54
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
5878
994
pF
pF
pF
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
559
Switching Characteristics (Note 2)
td(on)
Tr
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
15
27
27
ns
ns
V
DD = –10 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6 Ω
Td(off)
tf
210
100
60
336
160
96
ns
ns
Qg
nC
nC
nC
V
V
DS = –10 V,
GS = –4.5 V
ID = –9.2 A,
Qgs
Qgd
7
13
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–1.2
–1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = –1.2 A (Note 2)
–0.5
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW254P Rev. D1 (W)
Typical Characteristics
50
2
1.8
1.6
1.4
1.2
1
VGS = -4.5V
VGS = -1.5V
-2.0V
-3.0V
40
-1.5V
-2.5V
30
-2.0V
20
10
0
-2.5V
-3.0V
30
-3.5V
-4.5V
0.8
0
0.5
1
1.5
2
0
10
20
40
50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
1.5
1.4
1.3
1.2
1.1
1
ID = -4.6A
ID = -9.2A
VGS = -4.5V
0.03
0.025
0.02
TA = 125oC
0.015
0.01
0.9
0.8
0.7
TA = 25oC
0.005
0
1
2
3
4
5
-50
-25
0
25
50
75
100
125
150
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
40
30
20
10
0
TA = -55oC
VGS = 0V
25oC
125oC
VDS = -5V
10
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
0.5
1
1.5
2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW254P Rev. D1 (W)
Typical Characteristics
5
10000
8000
6000
4000
2000
0
VDS = -6V
f = 1 MHz
VGS = 0 V
ID = -9.2A
-8V
4
3
2
1
0
-10V
CISS
COSS
CRSS
0
10
20
30
40
50
60
70
0
5
10
15
20
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
FDW254P Rev D1 (W)
SINGLE PULSE
RθJA = 208°C/W
A = 25°C
©2008 Fairchild Semiconductor Corporation
µ
100
10ms
100ms
s
RDS(ON) LIMIT
10
T
1s
10s
1
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 208oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + Rθ
JA
0.2
RθJA = 208 °C/W
0.1
0.1
0.05
0.02
P(pk)
t1
0.01
0.01
t2
T
J - TA = P * RθJA(t)
SINGLE PULSE
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW254P Rev. D1 (W)
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Saving our world, 1mW at a time™
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
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Not In Production
Rev. I35
FDW254P Rev. D1 (W)
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