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FGH40T70SHD [FAIRCHILD]

700 V, 40 A Field Stop Trench IGBT;
FGH40T70SHD
型号： FGH40T70SHD
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

700 V, 40 A Field Stop Trench IGBT

双极性晶体管
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March 2016  
FGH40T70SHD  
700 V, 40 A Field Stop Trench IGBT  
Features  
General Description  
•
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ =175oC  
Positive Temperaure Co-efficient for Easy Parallel Operating  
High Current Capability  
Using novel field stop IGBT technology, Fairchild’s new series of  
field stop 3rd generation IGBTs offer the optimum performance  
for solar inverter, UPS, welder, telecom, ESS and PFC applica-  
tions where low conduction and switching losses are essential.  
Low Saturation Voltage: VCE(sat) =1.7 V(Typ.) @ IC = 40 A  
100% of the Parts Tested for ILM(1)  
High Input Impedance  
Applications  
•
Solar Inverter, UPS, Welder, Telecom, ESS, PFC  
Fast Switching  
Tighten Parameter Distribution  
RoHS Compliant  
C
E
C
G
G
COLLECTOR  
(FLANGE)  
E
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Description  
FGH40T70SHD_F155  
Unit  
V
VCES  
Collector to Emitter Voltage  
700  
± 20  
± 30  
Gate to Emitter Voltage  
V
VGES  
Transient Gate to EmitterVoltage  
Collector Current  
V
@ TC = 25oC  
@ TC = 100oC  
@ TC = 25oC  
80  
40  
A
IC  
Collector Current  
A
ILM (1)  
ICM (2)  
Pulsed Collector Current  
Pulsed Collector Current  
Diode Forward Current  
120  
A
120  
A
@ TC = 25oC  
@ TC = 100oC  
40  
A
IF  
Diode Forward Current  
20  
A
IFM (2)  
PD  
Pulsed Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
120  
A
@ TC = 25oC  
@ TC = 100oC  
268  
W
W
oC  
oC  
134  
TJ  
-55 to +175  
-55 to +175  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1. V = 400 V, V = 15 V, I =120 A, R = 30 Ω, Inductive Load  
CC  
GE  
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature  
©2016 Fairchild Semiconductor Corporation  
FGH40T70SHD Rev. 1.0  
1
www.fairchildsemi.com  
Thermal Characteristics  
Symbol  
Parameter  
FGH40T70SHD_F155  
Unit  
oC/W  
oC/W  
oC/W  
RθJC(IGBT)  
RθJC(Diode)  
RθJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
0.56  
1.71  
40  
Package Marking and Ordering Information  
Part Number  
Top Mark  
Package Packing Method Reel Size Tape Width Quantity  
FGH40T70SHD_F155 FGH40T70SHD  
TO-247 G03  
Tube  
N/A  
N/A  
30  
Electrical Characteristics of the IGBT  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Off Characteristics  
BVCES  
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA  
Temperature Coefficient of Breakdown  
700  
-
-
-
-
V
ΔBVCES  
ΔTJ  
/
V/oC  
I
C = 1 mA, Reference to 25oC  
0.6  
Voltage  
ICES  
IGES  
Collector Cut-Off Current  
G-E Leakage Current  
VCE = VCES, VGE = 0 V  
VGE = VGES, VCE = 0 V  
-
-
-
-
250  
μA  
±400  
nA  
On Characteristics  
VGE(th)  
G-E Threshold Voltage  
IC = 40 mA, VCE = VGE  
4.0  
-
5.5  
1.7  
7.5  
V
V
I
C = 40 A, VGE = 15 V  
2.15  
VCE(sat)  
Collector to Emitter Saturation Voltage  
IC = 40 A, VGE = 15 V,  
TC = 175oC  
-
2.37  
-
V
Dynamic Characteristics  
Cies  
Coes  
Cres  
Input Capacitance  
-
-
-
2028  
75  
-
-
-
pF  
pF  
pF  
VCE = 30 V VGE = 0 V,  
f = 1MHz  
,
Output Capacitance  
Reverse Transfer Capacitance  
26  
Switching Characteristics  
td(on) Turn-On Delay Time  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
22  
40  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
ns  
ns  
ns  
ns  
uJ  
uJ  
uJ  
Rise Time  
Turn-Off Delay Time  
Fall Time  
66  
V
CC = 400 V, IC = 40 A,  
RG = 6 Ω, VGE = 15 V,  
10  
Inductive Load, TC = 25oC  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
1150  
271  
1421  
20  
36  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
68  
V
R
CC = 400 V, IC = 40 A,  
G = 6 Ω, VGE = 15 V,  
13  
Inductive Load, TC = 175oC  
Eon  
Eoff  
Ets  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
1760  
455  
2215  
©2016 Fairchild Semiconductor Corporation  
FGH40T65SHD Rev. 1.0  
2
www.fairchildsemi.com  
Electrical Characteristics of the IGBT (Continued)  
Symbol  
Qg  
Parameter  
Test Conditions  
Min.  
Typ.  
69  
Max Unit  
Total Gate Charge  
-
-
-
-
-
-
nC  
nC  
nC  
V
CE = 400 V, IC = 40 A,  
VGE = 15 V  
Qge  
Gate to Emitter Charge  
Gate to Collector Charge  
13  
Qgc  
26  
Electrical Characteristics of the Diode  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
2.0  
Max Unit  
T
C = 25oC  
-
-
-
-
-
-
-
2.5  
VFM  
Diode Forward Voltage  
IF = 20 A  
V
TC = 175oC  
1.73  
54  
-
Erec  
trr  
Reverse Recovery Energy  
T
T
C = 175oC  
C = 25oC  
-
-
-
-
-
uJ  
ns  
37  
Diode Reverse Recovery Time  
IF =20 A, dIF/dt = 200 A/μs  
TC = 175oC  
TC = 25oC  
TC = 175oC  
235  
65  
Qrr  
Diode Reverse Recovery Charge  
nC  
944  
©2016 Fairchild Semiconductor Corporation  
FGH40T70SHD Rev. 1.0  
3
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 1. Typical Output Characteristics  
Figure 2. Typical Output Characteristics  
120  
120  
TC = 25oC  
20V  
10V  
TC = 175oC  
20V  
15V  
12V  
15V  
10V  
12V  
90  
60  
30  
0
90  
60  
30  
0
VGE = 8V  
VGE = 8V  
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 3. Typical Saturation Voltage  
Characteristics  
Figure 4. Saturation Voltage vs. Case  
Temperature at Variant Current Level  
4
3
2
1
120  
Common Emitter  
VGE = 15V  
Common Emitter  
VGE = 15V  
TC = 25oC  
TC = 175oC  
90  
80A  
40A  
60  
30  
0
IC = 20A  
-100  
-50  
0
50  
100  
150  
200  
0
1
2
3
4
5
Collector-Emitter Case Temperature, TC [oC]  
Collector-Emitter Voltage, VCE [V]  
Figure 5. Saturation Voltage vs. V  
Figure 6. Saturation Voltage vs. V  
GE  
GE  
20  
20  
Common Emitter  
TC = 175oC  
Common Emitter  
TC = 25oC  
16  
12  
8
16  
12  
8
40A  
80A  
IC = 20A  
40A  
80A  
IC = 20A  
4
4
0
0
4
8
12  
16  
20  
4
8
12  
16  
20  
Gate-Emitter Voltage, VGE [V]  
Gate-Emitter Voltage, VGE [V]  
©2016 Fairchild Semiconductor Corporation  
FGH40T65SHD Rev. 1.0  
4
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 7. Capacitance Characteristics  
Figure 8. Gate charge Characteristics  
15  
10000  
Common Emitter  
TC = 25oC  
Cies  
12  
VCC = 200V  
400V  
300V  
1000  
9
6
3
0
Coes  
100  
Common Emitter  
VGE = 0V, f = 1MHz  
TC = 25oC  
Cres  
10  
0
20  
40  
60  
80  
1
10  
30  
Gate Charge, Qg [nC]  
Collector-Emitter Voltage, VCE [V]  
Figure 9. Turn-on Characteristics vs.  
Gate Resistance  
Figure 10. Turn-off Characteristics vs.  
Gate Resistance  
1000  
100  
tr  
td(off)  
100  
td(on)  
tf  
Common Emitter  
10  
Common Emitter  
VCC = 400V, VGE = 15V  
VCC = 400V, VGE = 15V  
IC = 40A  
IC = 40A  
10  
5
TC = 25oC  
TC = 175oC  
TC = 25oC  
TC = 175oC  
1
0
10  
20  
30  
40  
50  
0
10  
20  
30  
40  
50  
Gate Resistance, RG [Ω]  
Gate Resistance, RG [Ω]  
Figure 11. Switching Loss vs.  
Gate Resistance  
Figure 12. Turn-on Characteristics vs.  
Collector Current  
100  
5000  
tr  
Eon  
1000  
td(on)  
Eoff  
Common Emitter  
VCC = 400V, VGE = 15V  
Common Emitter  
IC = 40A  
VGE = 15V, RG = 6Ω  
TC = 25oC  
TC = 175oC  
10  
TC = 25oC  
TC = 175oC  
5
20  
100  
40  
60  
80  
0
10  
20  
30  
40  
50  
Gate Resistance, RG [Ω]  
Collector Current, IC [A]  
©2016 Fairchild Semiconductor Corporation  
FGH40T65SHD Rev. 1.0  
5
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 13. Turn-off Characteristics vs.  
Collector Current  
Figure 14. Switching Loss vs.  
Collector Current  
10000  
500  
Common Emitter  
VGE = 15V, RG = 6Ω  
TC = 25oC  
TC = 175oC  
Eon  
100  
10  
1
td(off)  
1000  
tf  
Common Emitter  
VGE = 15V, RG = 6Ω  
TC = 25oC  
TC = 175oC  
Eoff  
100  
20  
40  
60  
80  
20  
40  
60  
80  
1M  
5
Collector Current, IC [A]  
Collector Current, IC [A]  
Figure 15. Load Current Vs. Frequency  
Figure 16. SOA Characteristic s  
300  
250  
Square Wave  
TJ <= 175oC, D = 0.5, VCE = 400V  
100  
200  
150  
100  
50  
VGE = 15/0V, RG = 6Ω  
10μs  
100μs  
1ms  
10 ms  
TC = 25oC  
10  
1
TC = 75oC  
DC  
*Notes:  
1. TC = 25oC  
2. TJ = 175oC  
TC = 100oC  
3. Single Pulse  
0.1  
0
1k  
1
10  
100  
1000  
10k  
100k  
Switching Frequency, f[Hz]  
Collector-Emitter Voltage, VCE [V]  
Figure 17. Forward Characteristics  
Figure 18. Reverse Recovery Current  
10  
80  
TC = 25oC  
di/dt = 200A/μs  
TC = 175oC ---  
8
TC = 25oC  
TC = 175oC  
6
di/dt = 100A/μs  
10  
di/dt = 200A/μs  
di/dt = 100A/μs  
TC = 75oC  
4
2
0
TC = 25oC  
TC = 75oC  
TC = 175oC  
4
1
0
10  
20  
30  
40  
0
1
2
3
Forward Voltage, VF [V]  
Forward Current, IF [A]  
©2016 Fairchild Semiconductor Corporation  
FGH40T65SHD Rev. 1.0  
6
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 19. Reverse Recovery Time  
Figure 20. Stored Charge  
350  
1200  
TC = 25oC  
TC = 25oC  
TC = 175oC ---  
280  
TC = 175oC ---  
900  
600  
300  
0
210  
140  
di/dt = 100A/μs  
di/dt = 200A/μs  
di/dt = 200A/μs  
di/dt = 100A/μs  
70  
0
0
10  
20  
30  
40  
0
10  
20  
30  
40  
Forward Current, IF [A]  
Forward Current, IF [A]  
Figure 21.Transient Thermal Impedance of IGBT  
0.6  
0.1  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
PDM  
t1  
t2  
single pulse  
Duty Factor, D = t1/t2  
0.01  
Peak Tj = Pdm x Zthjc + TC  
0.005  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Rectangular Pulse Duration [sec]  
Figure 22.Transient Thermal Impedance of Diode  
2
1
0.5  
0.2  
0.1  
0.05  
0.1  
PDM  
0.02  
t1  
0.01  
t2  
Duty Factor, D = t1/t2  
Peak Tj = Pdm x Zthjc + TC  
single pulse  
0.01  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Rectangular Pulse Duration [sec]  
©2016 Fairchild Semiconductor Corporation  
FGH40T65SHD Rev. 1.0  
7
www.fairchildsemi.com  
Mechanical Dimensions  
Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS  
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner  
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or  
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-  
ically the warranty therein, which covers Fairchild products.  
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:  
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3  
©2016 Fairchild Semiconductor Corporation  
FGH40T65SHD Rev. 1.0  
8
www.fairchildsemi.com  
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Rev. I77  
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©2016 Fairchild Semiconductor Corporation  
FGH40T70SHD Rev. 1.0  
9

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