RMPA27000 [FAIRCHILD]
27-29 GHZ 1.8 Watt Power Amplifier MMIC; 27-29 GHZ 1.8瓦功率放大器MMIC型号: | RMPA27000 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | 27-29 GHZ 1.8 Watt Power Amplifier MMIC |
文件: | 总9页 (文件大小:248K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
June 2004
RMPA27000
27–29 GHZ 1.8 Watt Power Amplifier MMIC
General Description
Features
The Fairchild Semiconductor’s RMPA27000 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA27000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
• 18dB small signal gain (typ.)
• 32.5dBm saturated power out (typ.)
• DC Bias connections on top or bottom side
• Circuit contains individual source vias
• Chip size 4.00mm x 2.98mm
Device
Absolute Ratings
Symbol
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Ratings
+6
Units
V
Vd
Vg
-2
V
Vdg
Simultaneous (Vd–Vg)
+8
V
I
Positive DC Current
2450
mA
dBm
°C
D
P
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
+22
IN
T
T
-30 to +85
-55 to +125
5.6
C
°C
STG
R
°C/W
JC
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
Electrical Characteristics (At 25°C), 50Ω system, Vd = +5V, Quiescent current (Idq) = 1500mA
Parameter
Min
Typ
Max
Units
GHz
V
Frequency Range
27
29
1
Gate Supply Voltage (Vg)
-0.2
18
Gain Small Signal (Pin = 0dBm)
Gain Variation vs. Frequency
16
32
dB
±0.5
32.5
32.5
1500
1780
20
dB
Power Output at 1dBm Compression
Power Output Saturated: (Pin = +19dBm)
Drain Current at Pin = 0dBm
dBm
dBm
mA
mA
%
Drain Current at P1dB Compression
Power Added Efficiency (PAE): at P1dB
OIP3 (16dBm/Tone)
38
dBm
dB
Input Return Loss (Pin = 0dBm)
Output Return Loss (Pin = 0dBm)
6
10
dB
Note:
1. Typical range of negative gate voltages is -1.0 to 0.0V to set typical Idq of 1500 mA.
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with
gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT
devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of
bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of
wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges
through the device.
Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for
appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap
between the chip and the substrate material.
GATE SUPPLY
(Vg)
MMIC CHIP
RF IN
RF OUT
GROUND
(Back of the Chip)
DRAIN SUPPLY
(Vd)
Figure 1. Functional Block Diagram
2.997
2.812
2.714
1.692
1.492
1.292
0.270
0.172
0.0
3.891
4.000
0.0
0.454
1.422
2.513
Dimensions in mm
Figure 2. Chip Layout and Bond Pad Locations
(Chip Size is 4.000mm x 2.997mm x 50µm Typical. Back of chip is RF and DC Ground)
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
GATE SUPPLY
(-Vg)
0.1µF
100pF
BOND WIRE Ls
MMIC CHIP
RF IN
RF OUT
100pF
100pF
100pF
GROUND
(Back of Chip)
BOND WIRE Ls
0.01µF
0.01µF
0.01µF
DRAIN SUPPLY
(Vd = +5V)
Figure 3. Chip Layout on Bond Pad Locations
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
DIE-ATTACH
80Au/20Sn
2 MIL GAP
5 MIL THICK
ALUMINA
50Ω
5 MIL THICK
ALUMINA
50Ω
RF OUTPUT
RF INPUT
100pF
100pF
100pF
100pF
L < 0.015"
(4 Places)
0.01µF
0.01µF
0.01µF
0.01µF
Vg (NEGATIVE)
Vd (POSITIVE)
MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side.
Note:
Use 0.003" by 0.0005" Gold Ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long
with stress relief.
Figure 4. Recommended Assembly and Bonding Diagram
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 1500mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
The following sequence of steps must be followed to
properly test the amplifier.
Step 1: Turn off RF input power.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Step 2: Connect the DC supply grounds to the grounds of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Step 3: Slowly apply positive drain bias supply voltage of
+5V to Vd.
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
Typical Characteristics
RMPA27000 S21, S11, S22 Mag. vs. Frequency
Bias Vd = 5V, Idq = 1500mA, T=25°C
25
20
15
10
5
S21
S22
0
-5
S11
-10
-15
-20
20
22
24
26
28
30
32
34
36
FREQUENCY (GHz)
RMPA27000 P1dB vs. Frequency
Vd = 5V, Idq = 1500mA
32.5
32.0
31.5
31.0
30.5
30.0
26
27
28
29
30
31
FREQUENCY (GHz)
RMPA27000 Power Out vs. Power In
Vd = 5V, Idq = 1500mA, T=25°C
34
32
30
28
26
24
22
20
18
16
14
12
10
30 GHz
27 GHz
28 GHz
29 GHz
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
Typical Characteristics (Continued)
RMPA27000 Gain vs. Power In
Vd = 5V, Idq = 1500mA, T=25°C
20
19
18
17
16
15
14
13
12
11
10
28 GHz
27 GHz
29 GHz
30 GHz
0
2
4
6
8
10
12
14
16
18
20
Pin (dBm)
RMPA27000 Two-Tone OIP3 vs. Output Power/tone
Vd = 5V, Idq = 1500mA, T=25°C
44
42
40
38
36
34
32
30
28
26
29 GHz
30 GHz
28 GHz
27 GHz
10
12
14
16
18
20
22
24
26
28
30
OUTPUT POWER/TONE (dBm)
©2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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