AOD407 [FREESCALE]
P-Channel 60-V (D-S) MOSFET High performance trench technology; P通道60 -V （ DS ） MOSFET高性能沟道技术
| 型号： | AOD407 |
| 厂家： | 
Freescale |
| 描述： | P-Channel 60-V (D-S) MOSFET High performance trench technology |
| 文件： | 总3页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AOD407/MCD407
P-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V (V)
rDS(on) m( Ω)
ID (A)
16
14
DS
135 @V = -10V
GS
-60
190 @V =-4.5V
GS
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
VDS
VGS
ID
IDM
IS
-60
±20
16
±40
-15
50
V
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
TA=25 C
o
A
Continuous Source Current (Diode Conduction)a
A
W
oC
a
o
PD
Power Dissipation
TA=25 C
Operating Junction and Storage Temperature Range
T, T -55to 175
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Units
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
oC/W
50
RθJA
oC/W
3.0
RθJC
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AOD407/MCD407
SPECIFICATIONS (TA= 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
V
IGSS
V = V , ID =-250uA
-1
GS(th)
DS
GS
V = 0 V, V = ±20 V
±100
-1
-10
nA
uA
DS
GS
V = -48 V, V = 0 V
DS
GS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
o
V = -48 V, V = 0 V, TJ = 55 C
DS
GS
ID(on)
V =-5V, V = -10 V
-20
A
DS
GS
V = -10 V, ID = -28 A
135
190
GS
Drain-Source On-ResistanceA
rDS(on)
mΩ
V =-4.5V, ID = -14 A
GS
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
TotalGateCharge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Ris e Time
g
V = -15 V, ID = -28 A
8
S
V
fs
DS
V
SD
IS=-2.5A, V = 0 V
-1.2
GS
Q
18
5
2
g
V = -30 V, V =-4.5V,
DS
GS
nC
nS
Q
gs
ID = -28 A
Q
gd
td(on)
tr
td(off)
tf
8
V = -30 V, R = 30 Ω , ID=-1A,
10
35
12
DD
L
Turn-Off Delay Time
Fall-Time
VGEN=-10V, RG=6Ω
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
rights of others. freescale products
customer’s technical experts. freescale does not convey any license
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
of the freescale product could create
sustain life, or for any other application in which the failure
a situation where personal injury or death may occur.
and its
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Action Employer.
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AOD407/MCD407
Package Information
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