AOD410 [FREESCALE]
N-Channel 30-V (D-S) MOSFET High performance trench technology; N通道30 -V （ DS ） MOSFET高性能沟道技术
| 型号： | AOD410 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30-V (D-S) MOSFET High performance trench technology |
| 文件： | 总5页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AOD410/MCD410
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
59 @ VGS = 10V
88 @ VGS = 4.5V
ID (A)
24
20
30
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Units
Drain-Source Voltage
VDS
VGS
ID
IDM
IS
30
±20
24
75
30
50
V
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
TC=25 C
o
A
Continuous Source Current (Diode Conduction)a
A
W
oC
a
o
PD
Power Dissipation
TC=25 C
Operating Junction and Storage Temperature Range
T, T -55 to 175
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Units
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
oC/W
50
RθJA
RθJC
oC/W
3.0
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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AOD410/MCD410
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Th res ho ld Voltag e
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
1
2.3
±100
1
V
nA
VDS = 24 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain CurrentA
IDSS
uA
VDS = 24 V, VGS = 0 V, TJ = 55oC
25
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 12 A
34
A
59
88
Drain-Source On-ResistanceA
rDS(on)
mΩ
VGS = 4.5 V, ID = 10 A
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
gfs
VSD
VDS = 15 V, ID = 12 A
IS = 24 A, VGS = 0 V
22
S
1.1
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charg e
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
2.2
0.5
0.8
720
165
60
16
5
V
DS = 15 V, VGS = 4.5 V,
nC
pF
ID = 10 A
VDS = 15 V, VGS = 0 V,
= 1MHz
f
D
VDD = 25 V, RL = 25 Ω , I = 24 A,
nS
GEN
V
= 10 V
Turn-Off Delay Time
Fall-Time
td(off)
tf
23
3
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
under its patent rights nor the
are not designed,
rights of others. freescale products
customer’s technical experts. freescale does not convey any license
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
of the freescale product could create
sustain life, or for any other application in which the failure
a situation where personal injury or death may occur.
and its
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or manufacture of the part. freescale is an Equal Opportunity/Affirmative
Action Employer.
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AOD410/MCD410
Typical Electrical Characteristics (N-Channel)
40
30
25
20
15
10
5
TA = -55oC
VDS = 5V
25oC
125oC
VGS = 10V
6.0V
30
5.0V
20
10
0
4.0V
3.0V
0
0
1
2
3
4
5
0.5
1.5
2.5
3.5
4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
700
600
500
400
300
200
100
0
f = 1MHz
VGS
=
VGS
2.5
2
CISS
4.5V
1.5
1
10V
COSS
CRSS
0.5
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On Resistance Vs Vgs Voltage
Figure 4. Capacitance Characteristics
1.6
GS
10
V
= 10V
ID = 7A
ID = 5.3A
15V
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
0
1
2
3
4
5
-50 -25
0
25
50
75
100 125 150
Qg, Gate Charge (nC)
TJ Juncation Temperature (ºC)
Figure 5. Gate Charge Characteristics
Figure 6. On-Resistance Variation with Temperature
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Freescale
AOD410/MCD410
Typical Electrical Characteristics (N-Channel)
0.1
0.08
0.06
0.04
0.02
0
100
ID = 5.3A
VGS = 0V
10
1
TA = 125oC
25oC
0.1
0.01
0.001
0.0001
TA = 25oC
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. On-Resistance with Gate to Source Voltage
2.2
2
50
40
30
20
10
0
VDS = VGS
ID = 250mA
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
1.8
1.6
1.4
1.2
1
0.001
0.01
0.1
1
10
100
-50
-25
0
25
50
75
100
125
150
175
t1, TIME (SEC)
TA, AMBIENT TEMPERATURE (oC)
Figure 9. Vth Gate to Source Voltage Vs Temperature
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D = 0.5
0.2
0.1
RqJA(t) = r(t) + RqJA
RqJA = 125oC/W
0.0
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t)
Duty Cycle, D = t1 / t2
SINGLE P ULSE
0.001
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, TIME (s ec)
Figure 11. Transient Thermal Response Curve
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Freescale
AOD410/MCD410
Package Information
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