AOD408L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AOD408L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOD408
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. Standard Product AOD408 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD408L is a Green Product ordering option.
AOD408 and AOD408L are electrically identical.
VDS (V) = 30V
ID = 18A (VGS = 10V)
R
DS(ON) < 18mΩ (VGS = 10V)
DS(ON) < 27mΩ (VGS = 4.5V)
R
TO-252
D-PAK
D
S
Top View
Drain Connected
to Tab
G
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current C
±20
18
V
A
TC=25°C
TC=100°C
ID
18
IDM
IAR
EAR
40
18
A
Repetitive avalanche energy L=0.1mH C
40
mJ
TC=25°C
Power Dissipation B
TC=100°C
60
PD
W
30
TA=25°C
2.5
PDSM
W
Power Dissipation A
TA=70°C
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Symbol
Typ
16.7
40
Max
25
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
50
RθJC
1.9
2.5
Alpha & Omega Semiconductor, Ltd.
AOD408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.8
VGS=4.5V, VDS=5V
40
A
V
GS=10V, ID=18A
13.6
18
18
24
27
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
mΩ
S
VGS=4.5V, ID=10A
VDS=5V, ID=18A
IS=1A,VGS=0V
20.6
25
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.75
1
V
Maximum Body-Diode Continuous Current
18
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040
180
110
0.7
1250
0.85
pF
pF
pF
Ω
V
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
GS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
19.8
9.8
2.5
3.5
4.5
3.9
17.4
3.2
19
25
nC
nC
nC
nC
ns
Qg(4.5V)
12.5
V
GS=10V, VDS=15V, ID=18A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=15V, RL=0.82Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=18A, dI/dt=100A/µs
IF=18A, dI/dt=100A/µs
25
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
8
nC
A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev 3: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
4V
10V
4.5V
VDS=5V
3.5V
125°C
25°C
VGS=3V
4
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
24
1.6
VGS=4.5V
VGS=10V
22
20
18
16
14
12
10
ID=18A
1.4
1.2
1
VGS=4.5V
VGS=10V
0
5
10
15
20
0.8
I
D (A)
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
30
20
10
ID=18A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=15V
ID=18A
1250
1000
750
500
250
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
1ms
10µs
40
30
20
10
0
10ms
100µs
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
0.1
PD
0.01
Ton
Single Pulse
0.0001
T
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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