AON4407 [FREESCALE]
12V P-Channel MOSFET; 12V P沟道MOSFET
| 型号： | AON4407 |
| 厂家： | 
Freescale |
| 描述： | 12V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON4407
12V P-Channel MOSFET
General Description
TheꢀAON4407ꢀusesꢀadvancedꢀtrenchꢀtechnologyꢀto
provideꢀexcellentꢀR
DS(ON),ꢀlowꢀgateꢀchargeꢀandꢀoperation
withꢀgateꢀvoltagesꢀasꢀlowꢀasꢀ1.8V.ꢀThisꢀdeviceꢀisꢀsuitable
forꢀuseꢀasꢀaꢀloadꢀswitch.
Features
VDSꢀ(V)ꢀ=ꢀꢁ12V
IDꢀ=ꢀꢁ9ꢀꢀꢀAꢀꢀꢀꢀꢀꢀꢀꢀꢀ(VGSꢀ=ꢀꢁ4.5V)
RDS(ON)ꢀ<ꢀ20mꢂꢀ(VGSꢀ=ꢀꢁ4.5V)
RDS(ON)ꢀ<ꢀ25mꢂꢀ(VGSꢀ=ꢀꢁ2.5V)
RDS(ON)ꢀ<ꢀ31mꢂꢀ(VGSꢀ=ꢀꢁ1.8V)
DFN 3x2
D
Top View
Bottom View
Pin 1
D
D
D
G
D
D
Rg
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
DrainꢁSourceꢀVoltage
ꢁ12
V
V
GateꢁSourceꢀVoltage
VGS
±8
ꢁ9
TA=25°C
TA=70°C
ContinuousꢀDrain
Current
PulsedꢀDrainꢀCurrentꢀC
ID
ꢁ7
A
IDM
ꢁ60
TA=25°C
TA=70°C
2.5
PowerꢀDissipationꢀB
PD
W
1.6
JunctionꢀandꢀStorageꢀTemperatureꢀRange
TJ,ꢀTSTG
ꢁ55ꢀtoꢀ150
°C
Thermal Characteristics
Parameter
Symbol
Typ
42
Max
Units
°C/W
°C/W
°C/W
MaximumꢀJunctionꢁtoꢁAmbientꢀA
tꢀꢀ≤ꢀ10s
50
90
30
RθJA
MaximumꢀJunctionꢁtoꢁAmbientꢀAꢀD
MaximumꢀJunctionꢁtoꢁLeadꢀ
SteadyꢀState
SteadyꢀState
74
RθJL
25
1 / 5
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AON4407
12V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=ꢁ250µA,ꢀVGS=0V
BVDSS
DrainꢁSourceꢀBreakdownꢀVoltage
ꢁ12
V
VDS=ꢁ12V,ꢀVGS=0V
ꢁ1
ꢁ5
IDSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
µA
TJ=55°C
V
DS=0V,ꢀVGS=±8V
VDS=VGSꢀꢀID=ꢁ250µA
GS=ꢁ4.5V,ꢀVDS=ꢁ5V
IGSS
GateꢁBodyꢀleakageꢀcurrent
GateꢀThresholdꢀVoltage
Onꢀstateꢀdrainꢀcurrent
±10
ꢁ0.85
µA
V
VGS(th)
ID(ON)
ꢁ0.35
ꢁ60
ꢁ0.5
V
A
VGS=ꢁ4.5V,ꢀID=ꢁ9A
16.5
22
20
26
25
31
38
mΩ
TJ=125°C
RDS(ON)
VGS=ꢁ2.5V,ꢀID=ꢁ8.5A
VGS=ꢁ1.8V,ꢀID=ꢁ7.5A
VGS=ꢁ1.5V,ꢀID=ꢁ7A
VDS=ꢁ5V,ꢀID=ꢁ9A
StaticꢀDrainꢁSourceꢀOnꢁResistance
20
mΩ
mΩ
mΩ
S
24
29
gFS
VSD
IS
ForwardꢀTransconductance
DiodeꢀForwardꢀVoltage
45
IS=ꢁ1A,VGS=0V
ꢁ0.53
ꢁ1
V
MaximumꢀBodyꢁDiodeꢀContinuousꢀCurrent
ꢁ2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
InputꢀCapacitance
1740 2100
pF
pF
pF
kΩ
V
GS=0V,ꢀVDS=ꢁ6V,ꢀf=1MHz
OutputꢀCapacitance
ReverseꢀTransferꢀCapacitance
Gateꢀresistance
334
200
VGS=0V,ꢀVDS=0V,ꢀf=1MHz
1.3
1.7
23
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
TotalꢀGateꢀChargeꢀ
GateꢀSourceꢀCharge
GateꢀDrainꢀCharge
TurnꢁOnꢀDelayTime
TurnꢁOnꢀRiseꢀTime
TurnꢁOffꢀDelayTime
TurnꢁOffꢀFallꢀTime
19
4.5
5.3
240
580
7
nC
nC
nC
ns
ns
µs
µs
VGS=ꢁ4.5V,ꢀVDS=ꢁ6V,ꢀID=ꢁ9A
VGS=ꢁ4.5V,ꢀVDS=ꢁ6V,ꢀRL=0.67Ω,
RGEN=3Ω
tD(off)
tf
4.2
22
IF=ꢁ9A,ꢀdI/dt=100A/µs
IF=ꢁ9A,ꢀdI/dt=100A/µs
trr
27
BodyꢀDiodeꢀReverseꢀRecoveryꢀTime
BodyꢀDiodeꢀReverseꢀRecoveryꢀCharge
ns
Qrr
17
nC
A.ꢀTheꢀvalueꢀofꢀRθJAꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in2ꢀFRꢁ4ꢀboardꢀwithꢀ2oz.ꢀCopper,ꢀinꢀaꢀstillꢀairꢀenvironmentꢀwithꢀTA=25°C.ꢀTheꢀvalue
inꢀanyꢀgivenꢀapplicationꢀdependsꢀonꢀtheꢀuser'sꢀspecificꢀboardꢀdesign.
B.ꢀTheꢀpowerꢀdissipationꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=150°C,ꢀusingꢀ≤ꢀ10sꢀjunctionꢁtoꢁambientꢀthermalꢀresistance.
C.ꢀRepetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀdutyꢀcyclesꢀtoꢀkeepꢀinitial
TJꢀ=25°C.
D.ꢀTheꢀRθJAꢀisꢀtheꢀsumꢀofꢀtheꢀthermalꢀimpedenceꢀfromꢀjunctionꢀtoꢀleadꢀRθJLꢀandꢀleadꢀtoꢀambient.
E.ꢀTheꢀstaticꢀcharacteristicsꢀinꢀFiguresꢀ1ꢀtoꢀ6ꢀareꢀobtainedꢀusingꢀ<300µsꢀpulses,ꢀdutyꢀcycleꢀ0.5%ꢀmax.
F.ꢀTheseꢀcurvesꢀareꢀbasedꢀonꢀtheꢀjunctionꢁtoꢁambientꢀthermalꢀimpedenceꢀwhichꢀisꢀmeasuredꢀwithꢀtheꢀdeviceꢀmountedꢀonꢀ1in2ꢀꢀFRꢁ4ꢀboardꢀwith
2oz.ꢀCopper,ꢀassumingꢀaꢀmaximumꢀjunctionꢀtemperatureꢀofꢀTJ(MAX)=150°C.ꢀTheꢀSOAꢀcurveꢀprovidesꢀaꢀsingleꢀpulseꢀrating.
Revꢀ1:ꢀJuneꢀ2009
2 / 5
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AON4407
12V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
60
50
40
30
20
10
0
ꢁ4.5V
ꢁ2.5V
VDS=ꢁ5V
ꢁ3V
ꢁ2V
125°C
VGS=ꢁ1.5V
25°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics(Note E)
Figure 1: On-Region Characteristics(Note E)
45
40
35
30
25
20
15
10
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
VGS=ꢁ1.5V
VGS=ꢁ4.5V
ID=ꢁ9A
VGS=ꢁ2.5V
VGS=ꢁ1.8V
VGS=ꢁ1.8V
ꢀID=ꢁ7.5A
VGS=ꢁ1.5V
ꢀID=ꢁ7A
VGS=ꢁ4.5V
10 12 14 16 18 20
0
2
4
6
8
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
50
1E+01
1E+00
1Eꢁ01
1Eꢁ02
ID=ꢁ9A
45
40
35
30
25
125°C
125°C
25°C
1Eꢁ03
20G
1Eꢁ04
15
25°C
10
1Eꢁ05
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
Figure 6: Body-Diode Characteristics(Note E)
3 / 5
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AON4407
12V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2800
2400
2000
1600
1200
800
4.5
4
VDS=ꢁ6V
ID=ꢁ9A
3.5
3
Ciss
2.5
2
1.5
1
Coss
400
0.5
0
Crss
0
0
4
8
12
-Qg (nC)
16
20
0
2
4
6
8
10
12
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
10
10µs
TJ(Max)=150°C
TA=25°C
1ms
RDS(ON)
limited
10ms
1
100ms
10s
DC
0.1
TJ(Max)=150°C
TA=25°C
1
0.01
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
Inꢀdescendingꢀorder
D=0.5,ꢀ0.3,ꢀ0.1,ꢀ0.05,ꢀ0.02,ꢀ0.01,ꢀsingleꢀpulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
G
0.01
Ton
T
SingleꢀPulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
4 / 5
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AON4407
12V P-Channel MOSFET
GateꢀChargeꢀTestꢀCircuitꢀ&ꢀWaveform
Vgs
Qg
ꢁ
ꢁ10V
ꢁ
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
ResistiveꢀSwitchingꢀTestꢀCircuitꢀ&ꢀWaveforms
RL
Vds
toff
ton
t
f
td(off)
td(on)
t
r
Vgs
ꢁ
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
DiodeꢀRecoveryꢀTestꢀCircuitꢀ&ꢀWaveforms
Qꢀꢀꢀ=ꢀꢁꢀꢀꢀIdt
Vdsꢀ+
rr
DUT
Vgs
ꢁIsd
trr
Vdsꢀꢁ
Ig
L
ꢁIF
Isd
Vgs
dI/dt
ꢁIRM
+
Vdd
VDC
Vdd
ꢁ
ꢁVds
5 / 5
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