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2SK3535-01 [FUJI]

N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
2SK3535-01
型号： 2SK3535-01
厂家： FUJI ELECTRIC    FUJI ELECTRIC
描述：

N-CHANNEL SILICON POWER MOSFET
N沟道硅功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件： 总4页 (文件大小：116K)
中文：  中文翻译
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FUJI POWER MOSFET  
200304  
2SK3535-01  
Super FAP-G Series  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings [mm]  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
for Switching  
Foot Print Pattern  
Absolute Maximum Ratings at Tc=25°C  
( unless otherwise specified)  
Item  
Symbol  
VDS  
Ratings  
250  
Unit  
V
Remarks  
Equivalent circuit schematic  
Drain-source voltage  
(4) Drain(D)  
VGS=30V  
V
VDSX  
ID  
220  
±37  
A
Continuous drain current  
Ta=25°C  
A
±3.4 *4  
(1) Gate(G)  
A
Pulsed drain current  
ID(puls]  
VGS  
IAR  
±148  
±30  
37  
V
Gate-source voltage  
A
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. power dissipation  
*2  
(3) Source(S)  
mJ  
EAS *1  
dVDS/dt  
dV/dt *3  
PD  
251.9  
20  
(2) Source(S)  
[power line]  
<
[signal line]  
VDS 250V  
=
kV/µs  
kV/µs  
W
5
Ta=25°C  
2.4 *4  
270  
+150  
-55 to +150  
W
Operating and storage  
temperature range  
Tch  
°C  
Tstg  
°C  
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C  
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C  
=
=
=
=
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)  
Electrical characteristics atTc =25°C ( unless otherwise specified)  
Test Conditions  
Min.  
Typ.  
Max. Units  
Symbol  
V(BR)DSS  
VGS(th)  
Item  
µ
ID=250 A  
VGS=0V  
VDS=VGS  
V
Drain-source breakdown voltaget  
Gate threshold voltage  
250  
µ
ID= 250 A  
V
3.0  
5.0  
Tch=25°C  
µA  
25  
VDS=250V VGS=0V  
VDS=200V VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
250  
VDS=0V  
IGSS  
RDS(on)  
gfs  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
VGS=±30V  
10  
75  
100  
ID=12.5A VGS=10V  
mΩ  
S
100  
ID=12.5A VDS=25V  
VDS=75V  
8
16  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
2000  
220  
15  
3000  
330  
30  
VGS=0V  
Output capacitance  
f=1MHz  
Reverse transfer capacitance  
Turn-on time ton  
ns  
VCC=72V ID=12.5A  
20  
30  
VGS=10V  
30  
45  
td(off)  
tf  
60  
90  
Turn-off time toff  
RGS=10 Ω  
20  
30  
VCC=72V  
ID=25A  
QG  
nC  
44  
66  
Total Gate Charge  
QGS  
QGD  
IAV  
14  
21  
Gate-Source Charge  
Gate-Drain Charge  
VGS=10V  
16  
24  
µ
L=309 H Tch=25°C  
37  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
IF=25A VGS=0V Tch=25°C  
IF=25A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
VSD  
1.10  
1.65  
V
trr  
Qrr  
0.45  
1.5  
µs  
µC  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
0.463 °C/W  
Thermal resistance  
Rth(ch-a)  
Rth(ch-a)  
channel to ambient  
channel to ambient  
87.0  
52.0  
°C/W  
°C/W  
*4  
1
2SK3535-01  
FUJI POWER MOSFET  
Characteristics  
Allowable Power Dissipation  
PD=f(Tc)  
Allowable Power Dissipation  
PD=f(Tc)  
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
Surface mounted on  
1000mm2,t=1.6mm FR-4 PCB  
(Drain pad area : 500mm2)  
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
Tc [°C]  
Tc [ °C]  
Typical Output Characteristics  
ID=f(VDS):80µs Pulse test,Tch=25°C  
Typical Transfer Characteristic  
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C  
100  
80  
60  
40  
20  
0
100  
20V  
10V  
8V  
7.5V  
10  
1
7.0V  
6.5V  
6.0V  
0.1  
VGS=5.5V  
10 12  
0
2
4
6
8
0
1
2
3
4
5
6
7
8
9
10  
VDS [V]  
VGS[V]  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80µs Pulse test, Tch=25°C  
Typical Transconductance  
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C  
100  
10  
1
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
VGS=  
6.0V  
6.5V  
7.0V  
5.5V  
7.5V  
8V  
10V  
20V  
0.1  
0.1  
1
10  
100  
0
20  
40  
60  
80  
100  
ID [A]  
ID [A]  
2
2SK3535-01  
FUJI POWER MOSFET  
Gate Threshold Voltage vs. Tch  
VGS(th)=f(Tch):VDS=VGS,ID=1mA  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=12.5A,VGS=10V  
270  
240  
210  
180  
150  
120  
90  
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
max.  
min.  
max.  
typ.  
60  
30  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
Tch [°C]  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=25A, Tch=25°C  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
101  
14  
12  
10  
8
Ciss  
Vcc= 36V  
72V  
100  
96V  
Coss  
6
10-1  
4
2
Crss  
0
10-2  
10-1  
100  
101  
102  
0
10  
20  
30  
40  
50  
60  
VDS [V]  
Qg [C]  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=72V, VGS=10V, RG=10Ω  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80µs Pulse test,Tch=25°C  
103  
102  
101  
100  
100  
10  
1
tf  
td(off)  
tr  
td(on)  
0.1  
10-1  
100  
101  
102  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00  
VSD [V]  
ID [A]  
3
2SK3535-01  
FUJI POWER MOSFET  
Maximum Avalanche Current vs. starting Tch  
I(AV)=f(starting Tch):Vcc=48V  
Maximum Avalanche Energy vs. starting Tch  
E(AS)=f(starting Tch):Vcc=48V  
700  
600  
500  
400  
300  
200  
100  
0
30  
25  
20  
15  
10  
5
IAS=15A  
IAS=22A  
IAS=37A  
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
starting Tch [°C]  
Maximum Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25°C,Vcc=48V  
Thermal Resistance vs. Drain Pad area  
t=1.6mm FR-4 PCB  
102  
101  
100  
10-1  
10-2  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
0
1000  
2000  
3000  
4000  
5000  
2
tAV [sec]  
Drain Pad Area [mm]  
http://www.fujielectric.co.jp/denshi/scd/  
4

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