IAUA250N04S6N007E [INFINEON]
;
| 型号： | IAUA250N04S6N007E |
| 厂家： | 
Infineon |
| 描述： | |
| 文件： | 总12页 (文件大小：781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUA250N04S6N007E
Automotive MOSFET
OptiMOS™ 6 Power-Transistor
PG-HSOF-5-1
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
40
0.7
380
V
RDS(on),max
ID (chip limited)
mΩ
A
Type
Package
Marking
IAUA250N04S6N007E
PG-HSOF-5-1
6N04R7E
Data Sheet
www.infineon.com/mosfets
Please read the Important Notice and Warnings at the end of this document
Rev. 1.0
2022-01-24
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2
Rev. 1.0
2
Data Sheet
2022-01-24
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
V GS = 10 V, Chip limitation1,2)
V GS = 10 V, DC current3)
I D
380
250
55
A
Continuous drain current
T a = 85 °C, V GS = 10 V,
R thJA on 2s2p2,4)
Pulsed drain current2)
I D,pulse
E AS
T C = 25 °C, t p= 100 µs
1300
560
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D = 55 A, R G,min = 25 Ω
mJ
A
I AS
R G,min = 25 Ω
110
V GS
±20
V
–
P tot
T C = 25 °C
192
W
°C
Power dissipation
T j, T stg
-55 ... +175
Operating and storage temperature
–
3
Rev. 1.0
3
Data Sheet
2022-01-24
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Thermal characteristics2)
Parameter
Values
typ.
–
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
Thermal resistance,
junction - ambient4)
–
–
0.78 K/W
–
–
22.9
–
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS = 0 V,
I D = 1 mA
V (BR)DSS
V GS(th)
I DSS
40
2.2
–
–
2.6
–
–
3.0
1
V
V DS = V GS, I D = 110 µA
V DS = 40 V, V GS = 0 V,
T j = 25 °C
Zero gate voltage drain current
µA
V DS = 40 V, V GS = 0 V,
T j = 125 °C2)
–
–
31
I GSS
V GS = 20 V, V DS = 0 V
V GS = 7 V, I D = 100 A
V GS = 10 V, I D = 100 A
–
Gate-source leakage current
–
–
–
–
–
100 nA
0.83 mΩ
0.70
RDS(on)
Drain-source on-state resistance
0.65
0.55
1
Gate resistance2)
R G
–
Ω
Rev. 1.0
2022-01-24
4
Data Sheet
4
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
6444
1944
94
8377 pF
2528
V GS = 0 V, V DS = 25 V,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
124
13
–
–
–
–
ns
14
V DD = 32 V, V GS = 10 V,
I D = 250 A, R G = 3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
27
19
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
28
19
94
4.2
36
29
128
–
nC
V
Q gd
Gate to drain charge
Gate charge total
V DD = 32 V, I D = 250 A,
V GS = 0 to 10 V
Q g
V plateau
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
I S
T C = 25 °C
–
–
–
–
250
A
V
Diode pulse current2)
I S,pulse
T C = 25 °C, t p = 100 µs
1300
V GS = 0 V, I F = 125 A,
T j = 25 °C
V SD
Diode forward voltage
–
0.8
1.1
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
60
73
–
–
ns
V R = 20 V, I F = 50 A,
di F/dt = 100 A/µs
Q rr
nC
1) Current is limited by the overall system design and the customer-specific PCB.
2) The parameter is not subject to production testing – specified by design.
3) Current is limited by the package.
4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Rev. 1.0
2022-01-24
5
Data Sheet
5
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Electrical characteristics diagrams
1 Power dissipation
P tot = f(T C); V GS ≥ 10 V
300
2 Drain current
I D = f(T C); V GS ≥ 10 V
300
250
200
150
100
50
250
200
150
100
50
0
0
0
0
50
100
150
200
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
101
10000
1 µs
100
1000
10 µs
100 µs
0.5
10-1
100
10
1
0.1
150 µs
0.05
0.01
10-2
single pulse
10-3
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
2022-01-24
6
6
Data Sheet
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C; parameter: VGS
1500
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
1.8
10 V
5.5 V
1.6
7 V
1250
4.5 V
1.4
1000
5 V
1.2
5 V
750
1
5.5 V
0.8
500
7 V
4.5 V
0.6
10 V
250
0
0.4
0.2
0
1
2
3
0
250
500
750
1000
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V: parameter: Tj
1500
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A, V GS = 10 V
1.4
1.2
1
1250
1000
750
max.
0.8
0.6
typ.
500
250
0
175 °C
0.4
0.2
0
-55 °C
25 °C
3
4
5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
2022-01-24
7
Data Sheet
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
9 Typ. gate threshold voltage
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
V GS(th) = f(T j); V GS = V DS; parameter: I D
4
3.5
3
104
Ciss
Coss
1100 µA
2.5
110 µA
103
2
Crss
1.5
1
102
0.5
0
101
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I AS = f(t AV); parameter: T j(start)
1000
I F = f(V SD ); parameter: T j
103
102
100
175 °C
25 °C
25 °C
100 °C
150 °C
101
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
2022-01-24
8
Data Sheet
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
13 Typical avalanche energy
E AS = f(T j); parameter: ID
1500
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D_typ = 1 mA
44
27 A
42
40
38
1000
55 A
500
110 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 250 A pulsed; parameter: V DD
10
V GS
9
8 V
Q g
8
32 V
7
6
5
4
3
2
1
0
V gs(th)
Q g(th)
Q sw
Q gate
Q gd
Q gs
0
60
120
Qgate [nC]
Rev. 1.0
2022-01-24
9
Data Sheet
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Package Outline
Footprint
Packaging
Rev. 1.0
2022-01-24
10
Data Sheet
OptiMOS™ 6 Automotive Power MOSFET, 40 V
IAUA250N04S6N007E
Revision History
Revision
Date
Changes
Revision 1.0
24.01.2022
Final Data Sheet
Rev. 1.0
2022-01-24
11
Data Sheet
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-01-24
Published by
IMPORTANT NOTICE
The information given in this document shall in no event be For further information on technology, delivery
regarded as
a guarantee of conditions or characteristics terms and conditions and prices, please contact
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
the nearest Infineon Technologies Office
(www.infineon.com).
With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of
any third party.
WARNINGS
© 2022 Infineon Technologies AG
All Rights Reserved.
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact the nearest
Infineon Technologies Office.
In addition, any information given in this document is subject to
customer's compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards
concerning customer's products and any use of the product of
Do you have any questions about any
aspect of this document?
Except as otherwise explicitly approved by
Infineon Technologies in
a written document
Email: erratum@infineon.com
signed by authorized representatives of Infineon
Technologies, Infineon Technologies’ products
Infineon
Technologies
in
customer's
applications.
The data contained in this document is exclusively intended for
technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for
the intended application and the completeness of the product
information given in this document with respect to such
application.
may not be used in any applications where
a
failure of the product or any consequences of the
use thereof can reasonably be expected to result
in personal injury.
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