IKY75N120CH3 [INFINEON]
IGBT HighSpeed 3;
| 型号： | IKY75N120CH3 |
| 厂家： | 
Infineon |
| 描述： | IGBT HighSpeed 3 双极性晶体管 |
| 文件： | 总16页 (文件大小：1577K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
LowꢀswitchingꢀlossesꢀIGBTꢀinꢀHighspeed3ꢀtechnologyꢀcopackedꢀwithꢀsoft,ꢀfast
recoveryꢀfullꢀcurrentꢀratedꢀanti-parallelꢀEmitterꢀControlledꢀdiode
ꢀ
Features:
HighꢀspeedꢀH3ꢀtechnologyꢀoffers:
•ꢀUltra-lowꢀlossꢀswitchingꢀlossesꢀthanksꢀtoꢀKelvinꢀemitterꢀpin
packageꢀinꢀcombinationꢀwithꢀHighꢀspeedꢀH3ꢀtechnology
•ꢀHighꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonantꢀtopologies
•ꢀ10µsecꢀshortꢀcircuitꢀwithstandꢀtimeꢀatꢀTvj=175°C
•ꢀEasyꢀparallelingꢀcapabilityꢀdueꢀtoꢀpositiveꢀtemperature
coefficientꢀinꢀVCE(sat)
•ꢀLowꢀEMI
•ꢀLowꢀGateꢀChargeꢀQG
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀfullꢀcurrentꢀanti-parallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀIndustrialꢀUPS
•ꢀCharger
•ꢀEnergyꢀStorage
•ꢀThree-levelꢀSolarꢀStringꢀInverter
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
2V 175°C
Marking
Package
IKY75N120CH3
1200V
75A
K75MCH3
PG-TO247-4-2
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.3
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
1200
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ134°C
IC
150.0
75.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
300.0
300.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ1200V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ100°C
IF
150.0
75.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
300.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ175°C
tSC
µs
10
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
PowerꢀdissipationꢀTcꢀ=ꢀ134°C
938.0
256.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,1)
junction - case
Diode thermal resistance,1)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.16 K/W
0.28 K/W
40 K/W
Thermal resistance
junction - ambient
1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet
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HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ75.0A
1200
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
2.00 2.35
2.50
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ75.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.90 2.30
V
V
1.85
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ2.60mA,ꢀVCEꢀ=ꢀVGE
5.1
5.8
6.5
VCEꢀ=ꢀ1200V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
450
-
µA
5000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ75.0A
-
-
-
100
-
nA
S
26.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4856
505
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
290
VCCꢀ=ꢀ960V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
370.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
38
32
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ6.0Ω,ꢀRG(off)ꢀ=ꢀ6.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
303
32
ns
ns
Turn-on energy
Eon
Eoff
Ets
3.40
2.90
6.30
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
292
4.90
41.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ75.0A,
diF/dtꢀ=ꢀ1200A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-585
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
38
35
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ600V,ꢀICꢀ=ꢀ75.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ6.0Ω,ꢀRG(off)ꢀ=ꢀ6.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ67pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
400
68
ns
ns
Turn-on energy
Eon
Eoff
Ets
6.10
6.00
12.10
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
538
13.80
60.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ600V,
IFꢀ=ꢀ75.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1200A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-360
-
A/µs
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
1000
900
100
800
not for linear use
700
600
10
500
400
300
1
200
100
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
160
140
120
100
80
300
VGE=20V
17V
250
15V
13V
11V
200
9V
7V
150
5V
60
100
50
0
40
20
0
25
50
75
100
125
150
175
0
1
2
3
4
5
6
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
300
250
200
150
100
50
300
VGE=20V
17V
15V
13V
11V
9V
Tvj = 25°C
Tvj = 175°C
250
200
150
100
50
7V
5V
0
0
0
1
2
3
4
5
6
2
4
6
8
10
12
14
16
18
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
4.5
1000
IC = 38A
IC = 75A
IC = 150A
4.0
td(off)
tf
td(on)
tr
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
10
1
25
50
75
100
125
150
175
0
30
60
90
120
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀRG=6Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
td(off)
tf
td(on)
td(off)
tf
td(on)
tr
1000
100
10
1000
100
10
tr
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀIC=75A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=75A,ꢀRG=6Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
8
7
6
5
4
3
2
1
35
30
25
20
15
10
5
typ.
min.
max.
Eoff
Eon
Ets
0
25
50
75
100
125
150
175
0
30
60
90
120
150
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=2.6mA)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀRG=6Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
30
25
20
15
10
5
14
Eoff
Eon
Ets
Eoff
Eon
Ets
12
10
8
6
4
2
0
0
0
5
10
15
20
25
30
35
40
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=600V,ꢀVGE=0/15V,
IC=75A,ꢀRG=6Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=600V,
VGE=0/15V,ꢀIC=75A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
18
16
Eoff
Eon
Ets
VCCꢀ=ꢀ240V
VCCꢀ=ꢀ960V
16
14
12
10
8
14
12
10
8
6
6
4
4
2
2
0
0
400 450 500 550 600 650 700 750 800
0
50
100 150 200 250 300 350 400
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=175°C,ꢀVGE=0/15V,
IC=75A,ꢀRG=6Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=75A)
Datasheet
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IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
600
Cies
Coes
Cres
1E+4
1000
100
500
400
300
200
100
0
0
5
10
15
20
25
30
10
11
12
13
14
15
16
17
18
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
(VCE≤600V,ꢀTvj≤175°C)
45
40
35
30
25
20
15
10
5
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.001
i:
1
2
3
4
5
ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3
2.7E-4
τi[s]:
3.8E-4
2.7E-3
0.019881 0.505051 12.95671
0
1E-4
1E-6
10
12
14
16
18
20
1E-5
1E-4
0.001
0.01
0.1
1
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof Figure 20. IGBTꢀtransientꢀthermalꢀresistance
gate-emitterꢀvoltage
(D=tp/T)
(VCE≤600V,ꢀstartꢀatꢀTvj≤175°C)
Datasheet
10
Vꢀ2.3
2019-04-15
IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
1000
D = 0.5
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
0.2
900
0.1
0.1
0.05
800
700
600
500
400
300
200
100
0
0.02
0.01
single pulse
0.01
0.001
i:
1
2
3
4
5
ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3
τi[s]:
3.0E-4
3.6E-4
2.7E-3
0.01681 0.44863 12.11241
1E-4
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
400
600
800
1000
1200
1400
1600
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 22. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=600V)
18
90
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
80
16
14
12
10
8
70
60
50
40
30
20
10
0
6
4
2
0
400
600
800
1000
1200
1400
1600
400
600
800
1000
1200
1400
1600
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Figure 24. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=600V)
Datasheet
11
Vꢀ2.3
2019-04-15
IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
0
-100
-200
-300
-400
-500
-600
-700
-800
-900
-1000
300
Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
Tvj = 25°C
Tvj = 175°C
250
200
150
100
50
0
400
600
800
1000
1200
1400
1600
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=600V)
3.5
IF = 38A
IF = 75A
IF = 150A
3.0
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.3
2019-04-15
IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
PG-TO247-4-2
M
A
E
E2
A2
R
b2
b4
E3
H
b6
2x
E1
1
2 3
e1
4
e
b
4 3 2
1
A1
b7
c
PACKAGE SURFACE ROUTE BETWEEN
PIN 1 & PIN 2 WILL BE 5.1mm MIN.
ALL b... AND c DIMENSIONS INCLUDING
PLATING EXCEPT AREA OF CUTTING
MILLIMETERS
MIN.
DIMENSION
MAX.
5.1
A
A1
A2
b
4.9
2.31
1.9
2.51
2.1
1.16
1.36
2.16
1.16
1.16
0.59
1.29
1.49
2.29
1.45
1.65
0.66
21.1
22.5
16.55
1.35
1.8
b2
b4
b6
b7
c
DOCUMENT NO.
Z8B00182798
D
20.9
REVISION
D1
D2
D3
D4
E
22.3
15.95
1
01
SCALE 2:1
1.6
15.7
3.9
15.9
4.1
0
5
10mm
E1
E2
E3
e
13.1
2.58
13.5
2.78
EUROPEAN PROJECTION
2.54
5.08
e1
H
0.8
19.8
2.55
0.97
3.24
1.9
1
L
20.1
2.85
1.57
3.44
2.1
L1
M
ISSUE DATE
N
23.09.2016
R
Datasheet
13
Vꢀ2.3
2019-04-15
IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.3
2019-04-15
IKY75N120CH3
HighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgenerationꢀIGBT
RevisionꢀHistory
IKY75N120CH3
Revision:ꢀ2019-04-15,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2017-04-26 Final data sheet
2017-06-09 Update Figure 6
2.1
2.2
2.3
2019-04-15 Update condition for Vgeth page 4 and Fig. 11
Datasheet
15
Vꢀ2.3
2019-04-15
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