IPB180N04S4-01 [INFINEON]
OptiMOS-T2 Power-Transistor; 的OptiMOS -T2功率三极管型号: | IPB180N04S4-01 |
厂家: | Infineon |
描述: | OptiMOS-T2 Power-Transistor |
文件: | 总9页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IPB180N04S4-H0
OptiMOS-T2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N04S400ATMA1
Power Field-Effect Transistor, 180A I(D), 40V, 0.00098ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N04S401ATMA1
Power Field-Effect Transistor, 180A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N04S4H0ATMA1
Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N04S4L-H0
本培训解释了TOLG的优势以及该封装的目标工业应用和汽车应用;并列出了当前可用的产品系列,以及您可以通过使用该封装获得哪些好处。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N04S4L01ATMA1
Power Field-Effect Transistor, 180A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N04S4LH0ATMA1
Power Field-Effect Transistor, 180A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N06S4-H1
OptiMOS-T2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N06S4H1ATMA1
Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N06S4H1ATMA2
Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N08S402ATMA1
Power Field-Effect Transistor, 180A I(D), 80V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N10S402ATMA1
Power Field-Effect Transistor, 180A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180N10S403ATMA1
Power Field-Effect Transistor, 180A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180P04P4-03
OptiMOS-P2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180P04P403ATMA1
Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180P04P403ATMA2
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB180P04P4L-02
OptiMOS-P2 Power-TransistorWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB200N15N3
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB200N15N3 G
与次优竞品相比,150V OptiMOS™ R DS(on) 降低 40%,品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性,如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
IPB200N15N3G
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
-
INFINEON
©2020 ICPDF网 联系我们和版权申明