IRF7313 [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | IRF7313 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总7页 (文件大小：546K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91480B
IRF7313
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
1
2
8
S1
G1
D1
VDSS = 30V
7
D1
3
4
6
S2
D2
l Fully Avalanche Rated
5
G2
D2
RDS(on) = 0.029Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS
VGS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
± 20
6.5
V
TA = 25°C
TA = 70°C
Continuous Drain Currentꢀ
ID
5.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
IDM
IS
30
2.5
TA = 25°C
TA = 70°C
2.0
1.3
Maximum Power Dissipation ꢀ
PD
W
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
82
mJ
A
4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
5.8
mJ
V/ ns
°C
dv/dt
TJ,TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
9/12/02
IRF7313
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
0.022 V/°C Reference to 25°C, ID = 1mA
0.023 0.029
0.032 0.046
1.0
14
1.0
25
100
-100
VGS = 10V, ID = 5.8A
GS = 4.5V, ID = 4.7A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 5.8A
Forward Transconductance
V
DS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
22
33
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
2.6 3.9
6.4 9.6
nC VDS = 15V
VGS = 10V, See Fig. 10
8.1
8.9
26
12
13
39
VDD = 15V
Rise Time
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
RG = 6.0Ω
RD = 15Ω
VGS = 0V
Fall
Time
1726
650
320
130
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
30
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
45
58
68
ns
Qrr
87nC
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 10mH
RG = 25Ω, IAS = 4.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
IRF7313
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
VDS
100
10
1
100
TJ = 25°C
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = 10V
20µs PULSE WIDTH
V
= 0V
GS
A
1
5.0A
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
IRF7313
2.0
0.040
0.036
0.032
0.028
0.024
0.020
5.8A
=
I
D
V
= 4.5V
GS
1.5
1.0
0.5
0.0
V
= 10V
GS
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
200
160
120
80
0.12
I
I
D
TOP
1.8A
3.2A
BOTTOM 4.0A
0.10
0.08
0.06
0.04
0.02
0.00
I
= 5.8A
D
40
0
A
150
A
0
3
6
9
12
15
25
50
75
100
125
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
IRF7313
1200
900
600
300
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
I = 5.8A
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 15V
DS
= C
= C + C
ds
gd
C
iss
C
oss
C
rss
4
A
0
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7313
Package Outline
SO8 Outline
INCHES
MIN MAX
.0532 .0688 1.35
MILLIMETERS
DIM
A
D
- B -
MIN
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
A1 .0040 .0098 0.10
8
1
7
2
6
3
5
4
5
B
C
D
E
e
.014
.018
0.36
H
E
0.25 (.010)
M
A M
- A -
.0075 .0098 0.19
.189
.150
.196
.157
4.80
3.81
e
6X
.050 BASIC
.025 BASIC
.2284 .2440
1.27 BASIC
0.635 BASIC
5.80 6.20
K x 45°
e1
e1
H
K
L
θ
A
.011
0.16
0°
.019
.050
8°
0.28
0.41 1.27
0° 8°
0.48
- C -
0.10 (.004)
6
C
8X
L
8X
A1
B
8X
θ
0.25 (.010)
M C A S B S
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
312
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
WAFER
LOT CODE
PART NUMBER
TOP
(LAST 4 DIGITS)
BOTTOM
IRF7313
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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http://www.irf.com/
Data and specifications subject to change without notice.
9/02
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