IRF7509TR [INFINEON]
Power MOSFET(Vdss=+-30V); 功率MOSFET （ VDSS = + - 30V ）
| 型号： | IRF7509TR |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=+-30V) |
| 文件： | 总8页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91270J
IRF7509
HEXFET® Power MOSFET
● Generation V Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
N-CHANNEL M OSFET
1
8
D1
S1
N-Ch P-Ch
2
7
G 1
D 1
3
4
6
5
VDSS 30V -30V
S2
D 2
● Available in Tape & Reel
● Fast Switching
G 2
D 2
P-CHANNEL M OSFET
RDS(on) 0.11Ω 0.20Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
30
2.7
2.1
21
-30
-2.0
-1.6
-16
V
A
ID @ TA = 25°C
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
W
W
0.8
10
± 20
mW/°C
V
VGS
Gate-to-Source Voltage
VGSM
dv/dt
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
30
V
5.0
V/ns
°C
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
100
°C/W
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1
12/1/98
IRF7509
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
GS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch 30
P-Ch -30
—
—
0.059
-0.039
—
—
—
—
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
V
N-Ch
P-Ch
—
—
—
—
—
—
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
VGS = 10V, ID = 1.7A
VGS = 4.5V, ID = 0.85A
VGS = -10V, ID =-1.2A
VGS = -4.5V, ID =-0.6A
N-Ch
P-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
N-Ch 1.0
P-Ch -1.0
N-Ch 1.9
P-Ch 0.92
—
—
—
—
—
—
—
—
—
—
—
—
VDS = VGS, ID = 250µA
VGS(th)
gfs
Gate Threshold Voltage
V
S
V
V
V
V
V
DS = VGS, ID = -250µA
DS = 10V, ID = 0.85A
DS = -10V, ID = -0.6A
DS = 24 V, VGS = 0V
DS = -24V, VGS = 0V
ForwardTransconductance
—
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
1.0
-1.0
25
-25
±100
IDSS
Drain-to-SourceLeakageCurrent
µA
VDS = 24 V, VGS = 0V, TJ = 125°C
DS = -24V, VGS = 0V, TJ = 125°C
V
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P ––
VGS = ± 20V
N-Ch –– 7.8 12
P-Ch 7.5 11
N-Ch –– 1.2 1.8
P-Ch 1.3 1.9
N-Ch –– 2.5 3.8
N-Channel
—
ID = 1.7A, VDS = 24V, VGS = 10V
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC
—
P-Channel
D = -1.2A, VDS = -24V, VGS = -10V
I
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.5 3.7
4.7
9.7
10
12
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Channel
VDD = 15V, ID = 1.7A, RG = 6.1Ω,
RD = 8.7Ω
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
19
VDD = -15V, ID = -1.2A, RG = 6.2Ω,
5.3
9.3
210
180
80
87
32
42
RD = 12Ω
Ciss
Coss
Crss
Input Capacitance
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
P-Channel
V
GS = 0V, VDS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
40
30
48
37
1.25
-1.25
21
-16
1.2
-1.2
60
45
72
55
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
DiodeForwardVoltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
VSD
trr
T
T
J = 25°C, IS = 1.7A, VGS = 0V
J = 25°C, IS = -1.8A, VGS = 0V
V
N-Channel
J = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
ns
nC
Reverse Recovery Time
T
Qrr
Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 21 )
N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7509
N - Channel
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
T
= 25°C
J
10
10
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
1
1
V
=
10V
DS
20µs PU LS E W ID TH
V
= 0V
GS
0.1
A
0.1
A
6.0
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.8
1.2
1.6
2.0
VG S , Gate-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
2.0
0.220
0.180
I
= 1.7A
D
1.5
1.0
0.5
0.0
VGS = 4.5V
0.140
0.100
VGS = 10V
V
= 10V
GS
0.060
A
0
2
4
6
8
10
-60 -40 -20
0
20
40
60
80
100 120 140 160
I
, Drain Current (A)
D
T
J
, Junction Tem perature (°C)
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
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3
IRF7509
N - Channel
100
10
1
0.140
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
0.120
0.100
0.080
0.060
10us
100us
1ms
ID = 2.7A
10ms
°
= 25 C
T
C
°
T
= 150 C
J
Single Pulse
0.1
0
4
8
12
16
1
10
100
V
, Gate-to-Source Voltage (V)
GS
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
20
400
V
C
C
C
=
=
=
=
0V,
f = 1M Hz
I
= 1.7A
D
GS
iss
C
C
C
+
+
C
C
,
C
S HORTE D
gs
gd
ds
gd
ds
V
V
=
=
24V
15V
DS
DS
rss
oss
gd
16
12
8
300
200
100
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE
9
0
A
A
1
10
100
0
2
4
6
8
10
12
V
, Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
4
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IRF7509
P - Channel
10
10
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
VGS
15V
TOP
TOP
-
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM
- 3.0V
1
1
-3.0V
-3.0V
20µs PULSE W IDTH
20µs P ULSE W IDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
D S
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
10
10
TJ = 25°C
TJ = 150°C
T
= 150°C
J
T
= 25°C
J
1
1
VDS = -10V
20µs PULSE W IDTH
V
= 0V
GS
A
1.4
0.1
0.1
7.0A
0.4
0.6
0.8
1.0
1.2
3.0
4.0
5.0
6.0
-VSD , Source-to-Drain Voltage (V)
-VG S , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
Fig 14. Typical Source-Drain Diode
ForwardVoltage
2.0
I
= -1.2A
D
1.5
1.0
0.5
0.0
V
=
-10V
GS
A
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Tem perature (°C)
Fig 15. Normalized On-Resistance
Fig 16. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
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5
IRF7509
P - Channel
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
= 25 C
T
C
°
T
= 150 C
J
Single Pulse
0.1
1
10
-V , Drain-to-Source Voltage (V)
100
DS
Fig 17. Typical On-Resistance Vs. Gate
Fig 18. Maximum Safe Operating Area
Voltage
20
400
I
=
D
-1.2A
V
C
C
C
=
=
=
=
0V,
f = 1M Hz
GS
iss
C
C
C
+
+
C
C
,
C
SH ORTED
gs
gd
ds
gd
gd
ds
rss
oss
V
V
=
=
-24V
-15V
DS
DS
16
12
8
300
200
100
0
C
C
iss
oss
C
rss
4
FO R TES T CIR CU IT
SE E FIG UR E
9
0
A
A
0
2
4
6
8
10
12
1
10
100
Q
, Total Gate Charge (nC)
-V
, Drain-to-Source Voltage (V)
G
DS
Fig 20. Typical Gate Charge Vs.
Fig 19. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
N-P - Channel
1000
100
D = 0.50
0.20
0.10
10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
J
x
Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7509
Package Outline
Micro8Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNM ENTS
INCHES
MILLIM ETERS
DIM
D
MIN
.036
.004
.010
.005
.116
M AX
.044
.008
.014
.007
.120
M IN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
D
7
D
6
D
5
D1 D1 D2 D2
A
A1
B
8
1
8
1
7
6
5
4
8
1
7
2
6
3
5
4
3
C
D
e
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
4
2
3
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
S1 G 1 S2 G 2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
θ
6X
e 1
RECOM M ENDED FOO TPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
4.24
( .167 ) ( .208 )
3.20
( .126 )
5.28
N O TE S :
1
2
3
D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14 .5M -1982 .
C O N TR O LLIN G D IM E N SIO N : IN C H .
0.65
( .0256 )
6X
D IM E N S IO N S D O N O T IN C LU D E M O LD F LAS H .
Part Marking Information
Micro8
A
DATE CO DE (YW W )
EXAM PLE : THIS IS AN IRF7501
Y = LAST DIG IT O F YEAR
W W = W EEK
451
7501
PART NUM BER
TO P
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7
IRF7509
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T ER M IN AL N UM BER
1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IR EC TIO N
NOTES:
1. OUTLINE C ONFOR M S TO EIA-481 & EIA-541.
2. CONTRO LLING DIM ENSION : M ILLIM ETER.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES
:
1. CO NT RO LLING D IM EN SIO N : M ILLIM ET ER .
2. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
8
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