IRG7PA19UPBF [INFINEON]
Insulated Gate Bipolar Transistor, 50A I(C), 360V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3;
| 型号： | IRG7PA19UPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 50A I(C), 360V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 局域网 栅 功率控制 晶体管 |
| 文件： | 总7页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96357
PDP TRENCH IGBT
IRG7PA19UPbF
Features
Key Parameters
VCE min
V
360
1.49
300
150
V
V
l
l
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
CE(ON) typ. @ IC = 30A
IRP max @ TC= 25°C
TJ max
A
°C
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
l
l
C
C
E
C
G
G
E
TO-247AC
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Nominal Current
50
26
15
A
IRP @ TC = 25°C
300
Repetitive Peak Current
PD @TC = 25°C
PD @TC = 100°C
104
Power Dissipation
W
W/°C
°C
42
Power Dissipation
0.83
Linear Derating Factor
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
300
Thermal Resistance
Parameter
Typ.
Max.
Units
Rθ
RθCS
Junction-to-Case
–––
0.24
—
1.2
—
JC
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g
Rθ
40
JA
Wt
6.0
—
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1
02/22/11
IRG7PA19UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 250µA
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
360 ––– –––
BVCES
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 15A
∆ΒVCES/∆TJ
Breakdown Voltage Temp. Coefficient
––– 0.34 ––– V/°C
––– 1.26 1.52
––– 1.41 –––
VGE = 15V, ICE = 25A
VGE = 15V, ICE = 30A
––– 1.49 –––
VCE(on)
VGE = 15V, ICE = 40A
Static Collector-to-Emitter Voltage
1.65 –––
––– 2.12 –––
2.93
V
VGE = 15V, ICE = 70A
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 25A, TJ = 150°C
––– 1.51 –––
VGE(th)
Gate Threshold Voltage
2.2
–––
–––
––– 4.7
V
VCE = VGE, ICE = 1.0mA
VCE = 360V, VGE = 0V
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
-10 ––– mV/°C
1.0
35
20
V
CE = 360V, VGE = 0V, TJ = 125°C
µA
nA
200
VCE = 360V, VGE = 0V, TJ = 150°C
––– 130 –––
––– ––– 100
––– ––– -100
V
V
V
V
GE = 30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
GE = -30V
CE = 25V, ICE = 25A
CE = 200V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
62
38
12
15
21
68
88
15
23
84
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
IC = 25A, VCC = 196V
RG = 10Ω, L = 200µH, LS = 150nH
TJ = 25°C
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
IC = 25A, VCC = 196V
Turn-On delay time
Rise time
R = 10 , L = 200µH, L = 150nH
Ω
G
S
TJ = 150°C
Turn-Off delay time
Fall time
––– 191 –––
100 ––– –––
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
Shoot Through Blocking Time
ns
µJ
––– 854 –––
––– 1083 –––
EPULSE
Energy per Pulse
VCC = 240V, R = 5.1
TJ = 100°C
Ω,
G
Class 1C
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
ESD
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
VGE = 0V
––– 1100 –––
Cies
Coes
Cres
LC
Input Capacitance
VCE = 30V
Output Capacitance
–––
–––
57
30
–––
–––
pF
ƒ = 1.0MHz
Between lead,
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
4.5
7.5
–––
–––
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
and center of die contact
Notes:
Half sine wave with duty cycle <= 0.05, ton=2µsec.
Rq is measured at TJ of approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRG7PA19UPbF
200
150
100
50
200
150
100
50
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
150
100
50
150
100
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
10
I
= 25A
C
T = 25°C
J
8
6
4
2
0
T
= 150°C
150
100
50
J
T = 25°C
J
T = 150°C
J
0
0
2
4
6
8
10
12
4
8
12
16
20
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRG7PA19UPbF
350
300
250
200
150
100
50
55
50
45
40
35
30
25
20
15
10
5
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
0
0
0
25
50
75
(°C)
100
125
150
25
50
75
100
125
150
T
C
Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1100
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1400
V
= 240V
L = 220nH
C = 0.4µF
CC
1300
1200
1100
1000
900
L = 220nH
C = variable
1000
900
800
700
600
500
100°C
100°C
25°C
25°C
800
700
190 200 210 220 230 240 250 260 270
Collector-to-Supply Voltage (V)
160 170 180 190 200 210 220 230
V
I , Peak Collector Current (A)
C
CC,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
1400
1000
V
= 240V
CC
L = 220nH
t = 1µs half sine
C= 0.4µF
C= 0.3µF
C= 0.2µF
1200
1000
800
100
10
1
10µsec
100µsec
1msec
600
400
Tc = 25°C
Tj = 150°C
Single Pulse
200
0.1
20
40
60
80
100 120 140 160
1
10
100
1000
T , Temperature (ºC)
J
V
(V)
CE
Fig 12. Forrward Bias Safe Operating Area
Fig 11. EPULSE vs. Temperature
4
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IRG7PA19UPbF
10000
1000
100
16
14
12
10
8
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
I
= 25A
C
C
C
C
SHORTED
ies
ge
gd
ce
= C
res
oes
gc
V
= 240V
CES
CES
CES
= C + C
ce
gc
V
= 150V
= 60V
Cies
V
6
4
Coes
Cres
2
0
10
0
10
Q
20
30
40
50
0
50
100
150
200
, Total Gate Charge (nC)
G
V
, Collector-toEmitter-Voltage(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05
0.03906 0.000026
τ
τ
J τJ
τ
Cτ
0.02
0.01
0.38906 0.000209
0.49531 0.002373
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.27656
0.016943
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG7PA19UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
6
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IRG7PA19UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
IRFPE30
135H
57
56
DATE CODE
YEAR 1 = 2001
WEEK 35
AS S E MBL Y
LOT CODE
Note: "P" in assembly line position
indicates "Lead-F ree"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2011
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7
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