IRG7PG35UPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | IRG7PG35UPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总11页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PG35UPbF
IRG7PG35U-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead-free package
C
Benefits
High efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to low
V
CE(on) and low switching losses
E
C
G
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
IRG7PG35U-EPbF
TO-247AD
Applications
U.P.S.
Welding
Solar Inverter
Induction heating
G
Gate
C
E
Collector
Emitter
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7PG35UPbF
IRG7PG35U-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG7PG35UPbF
IRG7PG35U-EPbF
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Max.
1000
55
35
60
Units
V
VCES
IC @ TC = 25°C
IC @ TC = 100°C Continuous Collector Current (Silicon Limited)
A
ICM
ILM
VGE
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
80
±30
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
210
105
W
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300 (0.063 in.(1.6mm) from case)
10 lbf·in (1.1 N·m)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT) Junction-to-Case (IGBT)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.70
–––
40
Units
°C/W
RθCS
RθJA
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
1
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IRG7PG35UPbF/IRG7PG35U-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1000
—
Typ.
—
Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
—
—
V
VGE = 0V, IC = 100µA
1.2
1.9
2.3
2.4
—
V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
IC = 20A, VGE = 15V, TJ = 25°C
V(BR)CES/TJ
—
—
2.2
—
VCE(on)
Collector-to-Emitter Saturation Voltage
IC = 20A, VGE = 15V, TJ = 150°C
IC = 20A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 600µA
V
—
—
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
V
Gate Threshold Voltage temp coefficient.
Forward Transconductance
-16
22
mV/°C VCE = VGE, IC = 600µA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
S
V
CE = 50V, IC = 20A, PW = 30µs
VGE = 0V, VCE = 1000V
GE = 0V, VCE = 1000V, TJ = 175°C
nA VGE = ±30V
ICES
Collector-to-Emitter Leakage Current
—
2.0
2000
—
100
—
µA
—
V
IGES
Gate-to-Emitter Leakage Current
—
±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
85
15
Max. Units
Conditions
Qg
—
IC = 20A
nC
µJ
ns
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
VCC = 600V
35
1060
620
1680
30
—
IC = 20A, VCC = 600V, VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
RG = 10, L = 200µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
15
Diode clamp the same as
IRG7PH35UDPbF
td(off)
tf
Turn-Off delay time
Fall time
160
80
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1880
1140
3020
25
µJ
ns
IC = 20A, VCC = 600V, VGE = 15V
RG = 10, L = 200µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
20
Diode clamp the same as
IRG7PH35UDPbF
td(off)
tf
Turn-Off delay time
Fall time
200
200
1940
60
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
40
TJ = 175°C, IC = 80A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC = 800V, Vp ≤ 1000V
Rg = 10, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
2
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IRG7PG35UPbF/IRG7PG35U-EPbF
45
40
35
30
25
20
15
10
5
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
Square Wave:
V
CC
I
Diodeas specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
60
50
40
30
20
10
0
250
200
150
100
50
0
25
50
75
100
(°C)
125
150
175
0
25
50
75
T
100 125 150 175
T
C
(°C)
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
100
1000
100
10
10 µs
10
100 µs
1
1ms
DC
1000
0.1
1
1
10
100
(V)
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE = 15V
3
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IRG7PG35UPbF/IRG7PG35U-EPbF
80
70
60
50
40
30
20
10
0
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
80
8
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
70
60
50
40
30
20
10
0
7
6
5
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
4
3
2
1
0
2
4
6
8
10
4
8
12
16
20
V
(V)
V
(V)
GE
CE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 175°C; tp = 30µs
8
7
6
5
4
3
2
1
8
7
6
5
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
4
3
2
1
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
TJ = 25°C
4
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IRG7PG35UPbF/IRG7PG35U-EPbF
4000
80
70
60
50
40
30
20
10
0
3000
E
ON
2000
T
= 175°C
J
E
OFF
1000
0
T
= 25°C
J
4
5
6
7
8
9
10
0
10
20
(A)
30
40
I
V
Gate-to-Emitter Voltage(V)
C
GE,
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V
3500
1000
td
OFF
3000
E
ON
t
F
2500
2000
100
10
1
td
ON
E
1500
1000
500
OFF
t
R
0
20
40
60
()
80
100
0
10
20
(A)
30
40
R
I
G
C
Fig. 14 - Typ. Switching Time vs. IC
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V
TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
10000
10000
Cies
td
OFF
1000
1000
t
F
100
100
Coes
td
ON
t
Cres
10
R
10
0
20
40
60
()
80
100
0
100
200
300
(V)
400
500
600
V
R
CE
G
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 16 - Typ. Switching Time vs. RG
VGE= 0V; f = 1MHz
TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
5
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IRG7PG35UPbF/IRG7PG35U-EPbF
16
14
12
10
8
1.0
I
= 600µA
C
V
V
= 600V
= 400V
CES
CES
0.8
0.6
0.4
6
4
2
0
0
20
Q
40
60
80
100
25
50
75
100
125
150
175
, Total Gate Charge (nC)
T
, Temperature (°C)
G
J
Fig. 18 - Typical Gate Charge vs. VGE
CE = 20A
Fig. 19 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
I
1
D = 0.50
0.20
0.1
0.10
0.05
Ri (°C/W)
0.017
i (sec)
0.000013
0.000141
0.002184
0.013107
R1
R1
R2
R2
R3
R3
R4
R4
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
0.218
Ci= iRi
Ci= iRi
0.01
0.299
0.177
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
6
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IRG7PG35UPbF/IRG7PG35U-EPbF
L
L
VCC
80 V
+
DUT
DUT
0
-
Vclamped
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
C fo rce
100K
L
DIODE CLAMP
D1
22K
C sen se
DUT /
DRIVER
0.0075µ
G force
VCC
DUT
Rg
E sense
E force
Fig.C.T.4 - BVCES Filter Circuit
Fig.C.T.3 - Switching Loss Circuit
7
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IRG7PG35UPbF/IRG7PG35U-EPbF
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
tr
tf
TEST CURRENT
90% test current
5% VCE
90% ICE
5% VCE
10% test current
5% ICE
0
Eoff Loss
Eon Loss
-100
-5
-100
-10
-0.5
0.5
time(µs)
1.5
-0.5 -0.3 -0.1 0.1 0.3 0.5
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.3
8
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IRG7PG35UPbF/IRG7PG35U-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
135H
57
RECTIFIER
LOGO
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
April 14, 2014
IRG7PG35UPbF/IRG7PG35U-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PG35UPbF/IRG7PG35U-EPbF
Qualification Information†
Qualification Level
Industrial
TO-247AC
TO-247AD
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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April 14, 2014
相关型号：
IRG7PH35UD1-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
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