IRL5NJ7404 [INFINEON]
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL; HEXFET功率MOSFET表面贴装（ SMD - 0.5 ） 20V ， P- CHANNEL
| 型号： | IRL5NJ7404 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL |
| 文件： | 总7页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94052A
LOGIC LEVEL
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRL5NJ7404
20V, P-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRL5NJ7404
-20V
0.04Ω -11A
SMD-0.5
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
Features:
n
Logic Level Gate Drive
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
n Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-11
-7.0
D
GS
C
A
I
D
= -10V, T = 100°C Continuous Drain Current
C
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
-44
DM
@ T = 25°C
P
50
W
W/°C
V
D
C
Linear Derating Factor
0.4
V
Gate-to-Source Voltage
±12
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
157
mJ
A
AS
I
-11
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
5.0
mJ
V/ns
AR
dv/dt
0.7
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0 (Typical)
For footnotes refer to the last page
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1
8/8/01
IRL5NJ7404
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-20
—
—
—
—
V
V
= 0V, I = -250µA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.14
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-0.7
9.0
—
—
—
—
—
—
—
0.04
0.07
—
Ω
V
V
= -4.5V, I = -11A
D
DS(on)
GS
GS
➀
= -2.7V, I = -7.0A
D
V
V
V
DS
= V , I = -250µA
GS(th)
fs
GS
D
Ω
g
—
S ( )
V
= -15V, I
= -3.2A ➀
DS
V
DS
I
-1.0
-25
= -16V ,V =0V
GS
DSS
DS
µA
—
V
= -16V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
50
V
V
= -12V
= 12V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-4.5V, I = -3.2A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
5.5
21
V
= -16V
DS
t
t
t
t
20
V
DD
V
= -10V, I = -3.2A,
D
150
65
=-4.5V, R = 6.0Ω
GS G
ns
d(off)
f
90
L
+ L
Total Inductance
—
S
D
Measured from the center of
nH
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1450
830
430
—
—
—
V
= 0V, V
= -15V
iss
GS
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-11
-44
-1.0
80
S
A
SM
V
t
V
ns
nC
T = 25°C, I = -3.2A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = -3.2A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
100
V
≤ -20V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
2.5
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRL5NJ7404
100
10
1
100
10
1
VGS
VGS
TOP
-7.5V
-4.5V
-3.5V
-3.0V
-2.7V
-2.0V
-1.75V
TOP
-7.5V
-4.5V
-3.5V
-3.0V
-2.7V
- 2.0V
-1.75V
BOTTOM -1.5V
BOTTOM -1.5V
-1.5V
-1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
-11A
=
I
D
°
T = 25 C
J
°
1.5
1.0
0.5
0.0
T = 150 C
J
V
=-15V
DS
20µs PULSE WIDTH
V
= -4.5V
GS
0.1
1.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
2.0
2.5
3.0
3.5 4.0
4.5
°
T , Junction Temperature( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRL5NJ7404
3000
2500
2000
1500
1000
500
10
8
V
= 0V,
f = 1MHz
C
I
D
= -3.2A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
=-16V
=-10V
=-4V
DS
DS
DS
C
= C
gd
rss
C
= C + C
ds
oss
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
10
20
30
40
50
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
10
°
T = 25 C
J
1ms
10ms
Tc = 25°C
Tj = 150°C
V
= 0 V
Single Pulse
GS
0.1
0.2
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
, Drain-toSource Voltage (V)
100
-V ,Source-to-Drain Voltage (V)
SD
-V
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRL5NJ7404
12
10
8
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
Fig 9. Maximum Drain Current Vs.
DS
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL5NJ7404
400
300
200
100
0
I
L
D
V
DS
TOP
-5.0A
-7.0A
BOTTOM -11A
-
D.U.T
R
G
VDS
+
I
A
AS
DRIVER
-
VGS
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
.3µF
-4.5V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRL5NJ7404
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ -11A, di/dt ≤ -84 A/µs,
SD
maximum junction temperature.
V
≤ -20V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= -15 V, Starting T = 25°C, L= 2.6mH
J
DD
Peak I
= -11A, V
=-10V, R = 25Ω
AS
GS
G
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
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