IRLMS1902TR [INFINEON]
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;
| 型号： | IRLMS1902TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
| 文件： | 总8页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91540C
IRLMS1902
HEXFET® Power MOSFET
l Generation V Technology
l Micro6 Package Style
l Ultra Low RDS(on)
A
1
2
6
D
D
D
VDSS = 20V
5
D
l N-Channel MOSFET
3
4
G
S
RDS(on) = 0.10Ω
Description
Top View
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachieveextremelylowon-resistanceper
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
idealforapplicationswhereprintedcircuitboardspace
isatapremium. It'suniquethermaldesignandRDS(on)
reductionenablesacurrent-handlingincreaseofnearly
300% compared to the SOT-23.
Micro6
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
3.2
2.6
A
18
1.7
PD @TA = 25°C
PowerDissipation
W
mW/°C
V
LinearDeratingFactor
13
VGS
Gate-to-SourceVoltage
± 12
dv/dt
PeakDiodeRecoverydv/dt
JunctionandStorageTemperatureRange
5.0
V/ns
°C
TJ, TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Min.
Typ.
Max
Units
RθJA
Maximum Junction-to-Ambient
75
°C/W
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1
3/18/04
IRLMS1902
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
20
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
0.032 V/°C Reference to 25°C, ID = 1mA
0.10
0.17
0.70
3.2
1.0
25
100
-100
4.7 7.0
0.97 1.5
1.8 2.6
7.0
11
12
4.0
300
120
50
VGS = 4.5V, ID = 2.2A
VGS = 2.7V, ID = 1.1A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 1.1A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS(th)
gfs
GateThresholdVoltage
V
S
ForwardTransconductance
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
TotalGateCharge
VGS = -12V
Qg
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
RiseTime
nC VDS = 16V
VGS = 4.5V, See Fig. 6 and 9
VDD = 10V
ID = 2.2A
ns
pF
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.0Ω
RD = 4.4Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
InputCapacitance
OutputCapacitance
VDS = 15V
ReverseTransferCapacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
showing the
D
IS
1.7
18
A
G
ISM
PulsedSourceCurrent
(BodyDiode)
integralreverse
p-njunctiondiode.
S
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
ReverseRecoveryCharge
1.2
V
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, IF = 2.2A
40
37
60
55
ns
nC
Qrr
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 2.2A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 5sec.
2
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IRLMS1902
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM1.75V
BOTTOM1.75V
1.75V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 150 C
J
1.75V
°
T = 25 C
J
°
0.1
0.1
0.1
0.1
1
10
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
2.2A
=
I
D
°
T = 25 C
1.5
1.0
0.5
0.0
J
°
10
T = 150 C
J
1
V
= 10V
DS
20µs PULSE WIDTH
V
=4.5V
GS
0.1
1.5
2.0
2.5
3.0
3.5 4.0 4.5
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRLMS1902
10
8
600
I
D
= 2.2A
V
= 0V,
f = 1MHz
gd , ds
GS
C
= C + C
C
SHORTED
iss
gs
V
= 16V
DS
C
= C
gd
rss
500
400
300
200
100
0
C
= C + C
ds
oss
gd
6
C
iss
4
C
oss
2
C
rss
FOR TEST CIRCUIT
SEE FIGURE 9
0
1
10
100
0
2
4
6
8
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
1
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.4
0.1
0.6
0.8
1.0
1.4
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRLMS1902
RD
VDS
Q
G
VGS
4.5V
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS1902
Peak Diode Recovery dv/dt Test Circuit
+
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 12. For N-channel HEXFET® power MOSFETs
6
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IRLMS1902
Package Outline
Micro6ä
LEAD ASSIGNMENTS
RECOMMENDED FOOTPRINT
3.00 (.118 )
2.80 (.111 )
-B-
2X 0.95 (.0375 )
2.20 (.087 )
D
D
S
1.75 (.068 )
1.50 (.060 )
6
1
5
2
4
6X (1.06 (.042 )
3.00 (.118 )
2.60 (.103 )
6
1
5
4
-A-
3
2
3
D
G
D
0.95 ( .0375 )
2X
0.50 (.019 )
6X
6X 0.65 (.025 )
0.35 (.014 )
0.15 (.006 ) M C A S B S
0O -10O
0.20 (.007 )
0.09 (.004 )
6X
1.30 (.051 )
0.90 (.036 )
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
SURFACES
0.15 (.006 )
MAX.
0.60 (.023 )
0.10 (.004 )
6
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Part Marking Information
Micro6ä
Note: A line above the work week
(as shown here) indicates Lead-Free.
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7
IRLMS1902
Tape & Reel Information
Micro6ä
8mm
FEED DIRECTION
4mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/04
8
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