IRLMS1902TR [INFINEON]

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6;
IRLMS1902TR
型号: IRLMS1902TR
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件: 总8页 (文件大小:185K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 91540C  
IRLMS1902  
HEXFET® Power MOSFET  
l Generation V Technology  
l Micro6 Package Style  
l Ultra Low RDS(on)  
A
1
2
6
D
D
D
VDSS = 20V  
5
D
l N-Channel MOSFET  
3
4
G
S
RDS(on) = 0.10Ω  
Description  
Top View  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachieveextremelylowon-resistanceper  
silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFET® power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in a wide variety of applications.  
The Micro6package with its customized leadframe  
produces a HEXFET® power MOSFET with RDS(on)  
60% less than a similar size SOT-23. This package is  
idealforapplicationswhereprintedcircuitboardspace  
isatapremium. It'suniquethermaldesignandRDS(on)  
reductionenablesacurrent-handlingincreaseofnearly  
300% compared to the SOT-23.  
Micro6  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current   
3.2  
2.6  
A
18  
1.7  
PD @TA = 25°C  
PowerDissipation  
W
mW/°C  
V
LinearDeratingFactor  
13  
VGS  
Gate-to-SourceVoltage  
± 12  
dv/dt  
PeakDiodeRecoverydv/dt‚  
JunctionandStorageTemperatureRange  
5.0  
V/ns  
°C  
TJ, TSTG  
-55 to + 150  
Thermal Resistance Ratings  
Parameter  
Min.  
Typ.  
Max  
Units  
RθJA  
Maximum Junction-to-Ambient „  
–––  
–––  
75  
°C/W  
www.irf.com  
1
3/18/04  
IRLMS1902  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)DSS  
Drain-to-SourceBreakdownVoltage  
20 ––– –––  
V
VGS = 0V, ID = 250µA  
V(BR)DSS/TJ BreakdownVoltageTemp.Coefficient  
––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA  
––– ––– 0.10  
––– ––– 0.17  
0.70 ––– –––  
3.2 ––– –––  
––– ––– 1.0  
––– ––– 25  
––– ––– 100  
––– ––– -100  
––– 4.7 7.0  
––– 0.97 1.5  
––– 1.8 2.6  
––– 7.0 –––  
––– 11 –––  
––– 12 –––  
––– 4.0 –––  
––– 300 –––  
––– 120 –––  
––– 50 –––  
VGS = 4.5V, ID = 2.2A ƒ  
VGS = 2.7V, ID = 1.1A ƒ  
VDS = VGS, ID = 250µA  
VDS = 10V, ID = 1.1A  
VDS = 16V, VGS = 0V  
VDS = 16V, VGS = 0V, TJ = 125°C  
VGS = 12V  
RDS(on)  
StaticDrain-to-SourceOn-Resistance  
VGS(th)  
gfs  
GateThresholdVoltage  
V
S
ForwardTransconductance  
IDSS  
IGSS  
Drain-to-SourceLeakageCurrent  
µA  
nA  
Gate-to-SourceForwardLeakage  
Gate-to-SourceReverseLeakage  
TotalGateCharge  
VGS = -12V  
Qg  
ID = 2.2A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-SourceCharge  
Gate-to-Drain("Miller")Charge  
Turn-OnDelayTime  
RiseTime  
nC VDS = 16V  
VGS = 4.5V, See Fig. 6 and 9 ƒ  
VDD = 10V  
ID = 2.2A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
FallTime  
RG = 6.0Ω  
RD = 4.4Ω, See Fig. 10 ƒ  
VGS = 0V  
Ciss  
Coss  
Crss  
InputCapacitance  
OutputCapacitance  
VDS = 15V  
ReverseTransferCapacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
ContinuousSourceCurrent  
(BodyDiode)  
Min. Typ. Max. Units  
Conditions  
MOSFETsymbol  
showing the  
D
IS  
–––  
–––  
–––  
–––  
1.7  
18  
A
G
ISM  
PulsedSourceCurrent  
(BodyDiode)  
integralreverse  
p-njunctiondiode.  
S
VSD  
trr  
DiodeForwardVoltage  
ReverseRecoveryTime  
ReverseRecoveryCharge  
––– ––– 1.2  
V
TJ = 25°C, IS = 2.2A, VGS = 0V ‚  
TJ = 25°C, IF = 2.2A  
––– 40  
––– 37  
60  
55  
ns  
nC  
Qrr  
di/dt = 100A/µs‚  
Notes:  
 Repetitive rating; pulse width limited by  
max. junction temperature. ( See fig. 11 )  
ƒ Pulse width 300µs; duty cycle 2%.  
‚ ISD 2.2A, di/dt 110A/µs, VDD V(BR)DSS  
TJ 150°C  
,
„ Surface mounted on FR-4 board, t 5sec.  
2
www.irf.com  
IRLMS1902  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
7.50V  
5.00V  
4.00V  
3.50V  
3.00V  
2.50V  
2.00V  
TOP  
7.50V  
5.00V  
4.00V  
3.50V  
3.00V  
2.50V  
2.00V  
BOTTOM1.75V  
BOTTOM1.75V  
1.75V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
T = 150 C  
J
1.75V  
°
T = 25 C  
J
°
0.1  
0.1  
0.1  
0.1  
1
10  
1
10  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 2. Typical Output Characteristics  
Fig 1. Typical Output Characteristics  
100  
2.0  
2.2A  
=
I
D
°
T = 25 C  
1.5  
1.0  
0.5  
0.0  
J
°
10  
T = 150 C  
J
1
V
= 10V  
DS  
20µs PULSE WIDTH  
V
=4.5V  
GS  
0.1  
1.5  
2.0  
2.5  
3.0  
3.5 4.0 4.5  
5.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
V
, Gate-to-Source Voltage (V)  
T , Junction Temperature( C)  
J
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs. Temperature  
www.irf.com  
3
IRLMS1902  
10  
8
600  
I
D
= 2.2A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
C
SHORTED  
iss  
gs  
V
= 16V  
DS  
C
= C  
gd  
rss  
500  
400  
300  
200  
100  
0
C
= C + C  
ds  
oss  
gd  
6
C
iss  
4
C
oss  
2
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 9  
0
1
10  
100  
0
2
4
6
8
V
, Drain-to-Source Voltage (V)  
Q , Total Gate Charge (nC)  
DS  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
100  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
10  
100us  
1ms  
°
T = 150 C  
J
°
T = 25 C  
J
1
10ms  
°
T = 25 C  
C
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
1.2  
0.1  
0.4  
0.1  
0.6  
0.8  
1.0  
1.4  
1
10  
100  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRLMS1902  
RD  
VDS  
Q
G
VGS  
4.5V  
D.U.T.  
Q
Q
GD  
GS  
RG  
+ VDD  
-
V
G
4.5V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Charge  
Fig 9a. Basic Gate Charge Waveform  
Fig 10a. Switching Time Test Circuit  
Current Regulator  
Same Type as D.U.T.  
V
DS  
50KΩ  
90%  
.2µF  
12V  
.3µF  
+
V
DS  
D.U.T.  
-
10%  
V
GS  
V
GS  
t
t
r
t
t
f
3mA  
d(on)  
d(off)  
I
I
D
G
Current Sampling Resistors  
Fig 9b. Gate Charge Test Circuit  
Fig 10b. Switching Time Waveforms  
100  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
P
2
DM  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D = t / t  
1
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRLMS1902  
Peak Diode Recovery dv/dt Test Circuit  
+
CircuitLayoutConsiderations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
D.U.T  
ƒ
-
+
‚
-
„
-
+

RG  
dv/dt controlled by RG  
Driver same type as D.U.T.  
ISD controlled by Duty Factor "D"  
D.U.T. - Device Under Test  
+
-
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 12. For N-channel HEXFET® power MOSFETs  
6
www.irf.com  
IRLMS1902  
Package Outline  
Micro6ä  
LEAD ASSIGNMENTS  
RECOMMENDED FOOTPRINT  
3.00 (.118 )  
2.80 (.111 )  
-B-  
2X 0.95 (.0375 )  
2.20 (.087 )  
D
D
S
1.75 (.068 )  
1.50 (.060 )  
6
1
5
2
4
6X (1.06 (.042 )  
3.00 (.118 )  
2.60 (.103 )  
6
1
5
4
-A-  
3
2
3
D
G
D
0.95 ( .0375 )  
2X  
0.50 (.019 )  
6X  
6X 0.65 (.025 )  
0.35 (.014 )  
0.15 (.006 ) M C A S B S  
0O -10O  
0.20 (.007 )  
0.09 (.004 )  
6X  
1.30 (.051 )  
0.90 (.036 )  
1.45 (.057 )  
0.90 (.036 )  
-C-  
0.10 (.004 )  
SURFACES  
0.15 (.006 )  
MAX.  
0.60 (.023 )  
0.10 (.004 )  
6
NOTES :  
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.  
2. CONTROLLING DIMENSION : MILLIMETER.  
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).  
Part Marking Information  
Micro6ä  
Note: A line above the work week  
(as shown here) indicates Lead-Free.  
www.irf.com  
7
IRLMS1902  
Tape & Reel Information  
Micro6ä  
8mm  
FEED DIRECTION  
4mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
178.00  
( 7.008 )  
MAX.  
9.90 ( .390 )  
8.40 ( .331 )  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 03/04  
8
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