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Q62702-F1062 [INFINEON]

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA); PNP硅RF晶体管（对于宽带放大器高达2GHz集电极电流高达20mA ）
Q62702-F1062
型号： Q62702-F1062
厂家： Infineon    Infineon
描述：

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
PNP硅RF晶体管（对于宽带放大器高达2GHz集电极电流高达20mA ）

晶体 放大器 晶体管
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BFT 92  
PNP Silicon RF Transistor  
• For broadband amplifiers up to 2GHz  
at collector currents up to 20mA  
• Complementary type: BFR 92P (NPN)  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFT 92  
W1s  
Q62702-F1062  
1 = B  
2 = E  
3 = C  
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
15  
20  
2
V
CEO  
CBO  
EBO  
I
I
25  
3
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T ≤ 78 °C  
S
200  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
thJS  
≤ 360  
K/W  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-13-1996  
BFT 92  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
(BR)CEO  
I = 1 mA, I = 0  
15  
-
-
-
C
B
Collector-base cutoff current  
= 10 V, I = 0  
I
I
nA  
µA  
-
CBO  
V
CB  
-
100  
10  
-
E
Emitter-base cutoff current  
= 2 V, I = 0  
EBO  
V
EB  
-
-
C
DC current gain  
I = 15 mA, V = 8 V  
h
FE  
15  
50  
C
CE  
Semiconductor Group  
2
Dec-13-1996  
BFT 92  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
AC Characteristics  
Transition frequency  
f
GHz  
pF  
T
I = 15 mA, V = 8 V, f = 500 MHz  
3.5  
5
-
C
CE  
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
C
C
F
cb  
ce  
eb  
V
CB  
-
-
-
0.54  
0.25  
0.77  
0.8  
Collector-emitter capacitance  
= 10 V, f = 1 MHz  
V
CE  
-
-
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
V
EB  
Noise figure  
dB  
I = 2 mA, V = 8 V, Z = Z  
C
CE  
S
Sopt  
f = 900 MHz  
-
-
2
-
-
f = 1.8 GHz  
Power gain  
3.2  
2)  
G
ma  
I = 15 mA, V = 8 V, Z = Z  
Sopt  
C
CE  
S
Z = Z  
L
Lopt  
f = 900 MHz  
f = 1.8 GHz  
-
-
13.5  
8
-
-
2
Transducer gain  
|S  
|
21e  
Ω
I = 15 mA, V = 8 V, Z =Z = 50  
C
CE  
S
L
f = 900 MHz  
-
-
11.5  
6
-
-
f = 1.8 GHz  
2
1/2  
2) G = |S /S | (k-(k -1) )  
ma  
21 12  
Semiconductor Group  
3
Dec-13-1996  
BFT 92  
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :  
Transistor Chip Data  
IS =  
4.5354  
10.983  
1.1172  
47.577  
1.206  
fA  
V
-
BF =  
98.533  
0.016123 A  
10.297  
0.019729 A  
-
NF =  
0.90551  
12.196  
1.2703  
-
VAF =  
NE =  
IKF =  
BR =  
IKR =  
RB =  
ISE =  
NR =  
ISC =  
IRB =  
RC =  
fA  
-
-
VAR =  
NC =  
RBM =  
CJE =  
TF =  
V
-
0.024709 fA  
Ω
Ω
V
-
7.9562  
1.5119  
0.79082  
0.30227  
0
0.79584  
0.66749  
0.32167  
0.21451  
922.07  
0.3  
mA  
Ω
fF  
ps  
Ω
-
1.5939  
1.7785  
32.171  
RE =  
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
XTB =  
FC =  
MJE =  
VTF =  
CJC =  
XCJC =  
VJS =  
EG =  
TNOM  
V
fF  
-
ITF =  
VJC =  
TR =  
0.013277 mA  
deg  
-
1.2  
V
ns  
-
0.3  
2.0779  
0
fF  
-
0.75  
V
eV  
K
MJS =  
XTI =  
0
3
0
1.11  
-
0.75167  
-
300  
All parameters are ready to use, no scalling is necessary.  
Extracted on behalf of SIEMENS Small Signal Semiconductors by:  
Institut für Mobil-und Satellitenfunktechnik (IMST)  
© 1996 SIEMENS AG  
Package Equivalent Circuit:  
LBI =  
0.85  
0.51  
0.69  
0.61  
0
nH  
nH  
nH  
nH  
nH  
nH  
fF  
LBO =  
LEI =  
LEO =  
LCI =  
LCO =  
CBE =  
CCB =  
CCE =  
0.49  
84  
fF  
165  
fF  
Valid up to 6 GHz  
For examples and ready to use parameters please contact your local Siemens distributor or sales office to  
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm  
Semiconductor Group  
4
Dec-13-1996  
BFT 92  
Total power dissipation P = f (T *, T )  
tot  
A
S
* Package mounted on epoxy  
300  
mW  
Ptot  
200  
150  
100  
TS  
TA  
50  
0
0
20  
40  
60  
80  
100 120 °C 150  
TA,TS  
Permissible Pulse Load R  
= f (t )  
Permissible Pulse Load P  
/P  
= f (t )  
thJS  
p
totmax totDC p  
10 3  
10 2  
R
Ptotmax/PtotDC  
-
thJS K/W  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.2  
0.5  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 1  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
Semiconductor Group  
5
Dec-13-1996  
BFT 92  
Collector-base capacitance C = f (V )  
Transition frequency f = f (I )  
cb  
CB  
T
C
V
BE  
= v = 0, f = 1MHz  
be  
V
= Parameter  
CE  
1.6  
pF  
6.0  
GHz  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
10V  
8V  
5V  
Ccb  
fT  
1.2  
1.0  
0.8  
0.6  
0.4  
3V  
2V  
1V  
0.7V  
0.2  
0.0  
0.5  
0.0  
0
4
8
12  
16  
V
VR  
22  
0
5
10  
15  
20  
mA  
30  
IC  
Power Gain G , G = f(I )  
Power Gain G , G = f(I )  
ma ms C  
ma  
ms  
C
f = 0.9GHz  
= Parameter  
f = 1.8GHz  
V = Parameter  
CE  
V
CE  
16  
dB  
12  
10  
8
8.5  
dB  
7.0  
10V  
5V  
3V  
10V  
8V  
5V  
G
G
3V  
2V  
6.0  
5.0  
4.0  
3.0  
2.0  
2V  
1V  
1V  
0.7V  
6
4
0.7V  
2
0
1.0  
0.0  
0
5
10  
15  
20  
mA  
IC  
30  
0
5
10  
15  
20  
mA  
IC  
30  
Semiconductor Group  
6
Dec-13-1996  
BFT 92  
Power Gain G , G = f(V ):_____  
Intermodulation Intercept Point IP =f(I )  
3 C  
ma  
ms  
CE  
2
|S | = f(V ):---------  
(3rd order, Output, Z =Z =50 )  
Ω
S L  
21  
CE  
f = Parameter  
V
= Parameter, f = 900MHz  
CE  
16  
28  
dBm  
24  
8V  
IC=15mA  
dB  
12  
10  
8
0.9GHz  
0.9GHz  
3V  
2V  
G
IP3  
22  
20  
18  
1V  
1.8GHz  
1.8GHz  
16  
14  
12  
10  
8
6
4
2
0
6
4
0
2
4
6
8
V
12  
0
4
8
12  
16  
20  
mA  
IC  
28  
VCE  
2
Power Gain G , G = f(f)  
Power Gain |S | = f(f)  
21  
ma  
ms  
V
= Parameter  
V
= Parameter  
CE  
CE  
30  
26  
IC=15mA  
IC=15mA  
dB  
22  
20  
18  
16  
14  
12  
10  
8
dB  
20  
15  
10  
G
S21  
6
4
10V  
2V  
10V  
2V  
5
0
2
0.7V  
1V  
0.7  
0
-2  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
GHz 3.5  
f
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
GHz 3.5  
f
Semiconductor Group  
7
Dec-13-1996  

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