IRFP17N50LPBF [INFINEON]
SMPS MOSFET HEXFET㈢Power MOSFET; 开关电源MOSFET HEXFET㈢Power MOSFET型号: | IRFP17N50LPBF |
厂家: | Infineon |
描述: | SMPS MOSFET HEXFET㈢Power MOSFET |
文件: | 总8页 (文件大小:188K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
IRFP17N50LS
Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IRFP21N60L
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Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IRFP21N60LPBF
SMPS MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IRFP21N60LPBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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IRFP220
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IRFP221
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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SAMSUNG
IRFP222
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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SAMSUNG
IRFP223
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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SAMSUNG
IRFP22N50A
Power MOSFET(Vdss=500V, Rds(on)max=0.23ohm, Id=22A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IRFP22N50A
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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VISHAY
IRFP22N50APBF
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INFINEON
IRFP22N60K
SMPS MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IRFP22N60K
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
IRFP22N60KPBF
Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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VISHAY
IRFP230
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SAMSUNG
IRFP231
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SAMSUNG
IRFP232
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SAMSUNG
IRFP233
Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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SAMSUNG
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