IRFS5620PBF [IRF]

DIGITAL AUDIO MOSFET; 数字音频MOSFET
IRFS5620PBF
元器件型号: IRFS5620PBF
生产厂家: INTERNATIONAL RECTIFIER    INTERNATIONAL RECTIFIER
描述和应用:

DIGITAL AUDIO MOSFET
数字音频MOSFET

PDF文件: 总9页 (文件大小:334K)
下载文档:  下载PDF数据表文档文件
型号参数:IRFS5620PBF参数

IRFS5620TRLPBF

Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
1 IRF

IRFS59N10D

Power MOSFET(Vdss=100V, Rds(on)max=0.025ohm, Id=59A)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
65 IRF

IRFS59N10DPBF

HEXFET Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
15 IRF

IRFS59N10DPBF

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 IRF

IRFS59N10DTRLP

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 IRF

IRFS59N10DTRR

Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 IRF

IRFS59N10DTRRP

暂无描述

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 IRF

IRFS610A

Advenced Power MOSFET (N-CHANNEL)

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
26 FAIRCHILD

IRFS610B

200V N-Channel MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
26 FAIRCHILD

IRFS614A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.1A I(D) | TO-220AB

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
18 ETC

IRFS614B

250V N-Channel MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
18 FAIRCHILD

IRFS614B_FP001

Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220F, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 FAIRCHILD

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 FAIRCHILD

IRFS620

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4A I(D) | SOT-186

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
17 ETC

IRFS620

Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 156
-
0 SAMSUNG