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IRL2910 [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRL2910
型号： IRL2910
厂家： Infineon    Infineon
描述：

HEXFET Power MOSFET
HEXFET功率MOSFET

晶体 晶体管 开关 脉冲 局域网
文件： 总8页 (文件大小：126K)
中文：  中文翻译
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相关型号：

IRL2910-011

 Power Field-Effect Transistor, 48A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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6 INFINEON

IRL2910L

 HEXFET POWER MOSFET

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58 INFINEON

IRL2910LPBF

 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN

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3 INFINEON

IRL2910N

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29 ETC

IRL2910PBF

 HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026ヘ , ID = 55A )

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84 INFINEON

IRL2910S

 HEXFET POWER MOSFET

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IRL2910SPBF

 HEXFET㈢ Power MOSFET

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54 INFINEON

IRL2910STRL

 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3

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0 INFINEON

IRL2910STRR

 暂无描述

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1 INFINEON

IRL2910STRRPBF

 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

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IRL3102

 Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)

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147 INFINEON

IRL3102-003

 Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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IRL3102-006

 Power Field-Effect Transistor, 61A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 INFINEON

IRL3102LPBF

 暂无描述

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0 INFINEON

IRL3102PBF

 HEXFET Power MOSFET

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32 INFINEON

IRL3102S

 Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)

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92 INFINEON

IRL3102SPBF

 HEXFET Power MOSFET

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40 INFINEON

IRL3102STRLPBF

 Transistor

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0 INFINEON

IRL3103

 Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

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881 INFINEON

IRL3103-024

 Power Field-Effect Transistor, 56A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 INFINEON
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