IXBH20N300 [IXYS]
Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3;
| 型号： | IXBH20N300 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 50A I(C), 3000V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3 局域网 栅 瞄准线 功率控制 晶体管 |
| 文件： | 总5页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 3000V
IC110 = 20A
VCE(sat) ≤ 3.2V
IXBH20N300
IXBT20N300
TO-268 (IXBT)
G
Symbol
Test Conditions
Maximum Ratings
E
VCES
VCGR
TC = 25°C to 150°C
3000
3000
V
V
C (Tab)
TJ = 25°C to 150°C, RGE = 1MΩ
TO-247 (IXBH)
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
50
20
140
A
A
A
G
C
C (Tab)
SSOA
(RBSOA)
V
GE = 15V, TVJ = 125°C, RG = 20Ω
ICM = 130
1500
A
V
E
Clamped Inductive Load
G = Gate
E = Emiiter
C
= Collector
PC
TC = 25°C
250
W
Tab = Collector
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
Features
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
z
Weight
TO-247
TO-268
6
4
g
g
High Blocking Voltage
z Anti-Parallel Diode
z International Standard Packages
z Low Conduction Losses
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
Advantages
BVCES
VGE(th)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
3000
2.5
V
V
5.0
z Low Gate Drive Requirement
z High Power Density
ICES
VCE = 0.8 • VCES, VGE = 0V
35 μA
1.5 mA
TJ = 125°C
IGES
VCE = 0V, VGE = ± 20V
±100 nA
Applications:
VCE(sat)
IC = 20A, VGE = 15V, Note 1
2.7
3.2
3.2
V
V
z Switch-Mode and Resonant-Mode
Power Supplies
TJ = 125°C
z Uninterruptible Power Supplies (UPS)
z Laser Generators
z Capacitor Discharge Circuits
z AC Switches
© 2012 IXYS CORPORATION, All Rights Reserved
DS100124A(12/12)
IXBH20N300
IXBT20N300
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-268 Outline
Min.
Typ.
Max.
gfS
IC = 20A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
11
18
S
Cies
Coes
Cres
2230
92
pF
pF
pF
33
Qg
105
13
nC
nC
nC
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 1000V
45
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
64
210
300
504
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
68
540
300
395
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
RthJC
RthCS
0.50 °C/W
°C/W
(TO-247)
0.21
TO-247 Outline
Reverse Diode
∅ P
Symbol Test Conditions
Characteristic Values
1
2
3
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 20A, VGE = 0V
2.1
V
μs
A
1.35
30
IF = 10A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
IRM
e
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
Note
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBH20N300
IXBT20N300
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
40
35
30
25
20
15
10
5
300
250
200
150
100
50
VGE = 25V
20V
15V
VGE = 25V
20V
15V
10V
10V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
14
16
18
20
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGE = 25V
20V
VGE = 15V
15V
I C = 40A
I C = 20A
10V
I C = 10A
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
50
45
40
35
30
25
20
15
10
5
TJ = 25ºC
I C = 40A
TJ = 125ºC
25ºC
20A
10A
- 40ºC
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
5
7
9
11
13
15
VGE - Volts
17
19
21
23
25
VGE - Volts
© 2012 IXYS CORPORATION, All Rights Reserved
IXBH20N300
IXBT20N300
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
28
24
20
16
12
8
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 25ºC
TJ = 125ºC
4
0
0
5
10
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
VF - Volts
2
2.5
3
IC - Amperes
Fig. 10. Capacitance
Fig. 9. Gate Charge
16
14
12
10
8
10,000
1,000
100
= 1 MHz
f
VCE = 1kV
I
I
C = 20A
G = 10mA
C
ies
C
oes
6
4
2
C
res
0
10
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 11. Reverse-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
140
120
100
80
1
0.1
60
40
TJ = 125ºC
G = 20Ω
dv / dt < 10V / ns
R
20
0
0.01
250
500
750 1000 1250 1500 1750 2000 2250 2500 2750 3000
VCE - Volts
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBH20N300
IXBT20N300
Fig. 14. Resistive Turn-on Rise Time vs.
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Collector Current
700
600
500
400
300
200
100
0
700
600
500
400
300
200
100
0
RG = 10Ω , VGE = 15V
RG = 10Ω , VGE = 15V
CE = 1250V
VCE = 1250V
V
TJ = 125ºC
I C = 20A
I C = 40A
TJ = 25ºC
25
10
10
35
45
55
65
75
85
95
105
115
125
10
25
10
15
20
25
30
35
40
TJ - Degrees Centigrade
IC - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
850
800
750
700
650
600
550
500
450
200
700
600
500
400
300
200
100
350
330
310
290
270
250
230
tf
t
d(off) - - - -
t r
t
180
160
140
120
100
80
d(on) - - - -
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 20A
I C = 20A, 40A
I C = 40A
60
40
35
45
55
65
75
85
95
105
115
125
20
30
40
50
60
70
80
TJ - Degrees Centigrade
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
1200
1000
800
600
400
200
0
460
420
380
340
300
260
220
600
550
500
450
400
350
300
250
200
1600
1400
1200
1000
800
600
400
200
0
tf
td(off
) - - - -
t f
t
d(off) - - - -
TJ = 125ºC, VGE = 15V
RG = 10Ω, VGE = 15V
VCE = 1250V
VCE = 1250V
I C = 20A
I C = 40A
TJ = 125ºC, 25ºC
30
20
30
40
50
60
70
80
15
20
25
IC - Amperes
35
40
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_20N300(5P)03-10-09
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