IXFK64N50Q3 [IXYS]
HiperFET Power MOSFETs Q3-Class; HiperFET功率MOSFET Q3级
| 型号： | IXFK64N50Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiperFET Power MOSFETs Q3-Class |
| 文件： | 总5页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
HiperFETTM
Power MOSFETs
Q3-Class
VDSS = 600V
ID25 = 64A
RDS(on) ≤ 95mΩ
IXFK64N60Q3
IXFX64N60Q3
trr
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
TO-264 (IXFK)
Fast Intrinsic Rectifier
Symbol
VDSS
Test Conditions
Maximum Ratings
G
D
S
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
600
600
V
V
VDGR
Tab
VGSS
VGSM
Continuous
Transient
±30
±40
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
64
A
A
250
IA
EAS
TC = 25°C
TC = 25°C
64
3
A
J
G
D
S
Tab
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
50
V/ns
W
1250
G = Gate
S = Source
D
= Drain
Tab = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
z
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
z
z
z
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z
High Power Density
Easy to Mount
Space Savings
z
z
Symbol
Test Conditions
Characteristic Values
Applications
(TJ = 25°C Unless Otherwise Specified)
Min.
600
3.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ±30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
z
6.5
z
±200 nA
Power Supplies
DC Choppers
Temperature and Lighting Controls
z
IDSS
50 μA
1.5 mA
z
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
95 mΩ
DS100350(06/11)
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK64N60Q3
IXFX64N60Q3
Symbol
Test Conditions
Characteristic Values
TO-264 AA Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
26
42
S
Ciss
Coss
Crss
9930
1090
90
pF
pF
pF
RGi
0.13
45
Ω
: 1 - Gate
2 - Drain
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
3 - Source
4 - Drain
tr
15
50
ns
ns
Dim.
Millimeter
Inches
td(off)
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
tf
11
ns
Qg(on)
Qgs
190
67
nC
nC
nC
b
b1
b2
c
D
E
e
J
1.12
2.39
2.90
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.00
1.42
2.69
3.09
.044
.094
.114
.021
1.020
.780
.215 BSC
.000
.000
.056
.106
.122
.033
1.030
.786
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
0.83
Qgd
78
RthJC
RthCS
0.10 °C/W
°C/W
0.25
0.25
.010
.010
0.15
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
PLUS 247TM Outline
IS
VGS = 0V
64
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
256
1.4
trr
QRM
IRM
300 ns
IF = 32A, -di/dt = 100A/μs
2.1
16.6
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXFK64N60Q3
IXFX64N60Q3
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
VGS = 10V
9V
VGS = 10V
9V
140
120
100
80
60
50
40
30
20
10
0
8V
8V
60
7V
6V
40
7V
6V
20
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
VGS = 10V
8V
60
50
40
30
20
10
0
VGS = 10V
I D = 64A
7V
I D = 32A
6V
5V
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
70
60
50
40
30
20
10
0
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGS = 10V
TJ = 125ºC
TJ = 25ºC
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
ID - Amperes
TC - Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK64N60Q3
IXFX64N60Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
TJ = - 40ºC
25ºC
125ºC
TJ = 125ºC
25ºC
- 40ºC
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.3
40
0
10
20
30
40
50
60
70
80
90
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
14
12
10
8
200
160
120
80
VDS = 300V
I D = 32A
I G = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
40
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
50
100
150
200
250
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100
10
100,000
10,000
1,000
100
= 1 MHz
f
RDS(on) Limit
25µs
C
iss
100µs
C
oss
C
rss
1
TJ = 150ºC
1ms
TC = 25ºC
Single Pulse
10
0.1
0
5
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK64N50Q3
IXFX64N50Q3
Fig. 13. Maximum Transient Thermal Impedance
aaaaa
0.2
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_64N60Q3(Q8) 6-21-11
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