IXFP3N80 [IXYS]
HiPerFET Power MOSFETs; HiPerFET功率MOSFET
| 型号： | IXFP3N80 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs |
| 文件： | 总2页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
IXFA 3N80 VDSS
IXFP 3N80 ID25
= 800 V
= 3.6 A
RDS(on) = 3.6 W
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Highdv/dt
trr £ 250 ns
Preliminarydatasheet
Symbol
TestConditions
Maximum Ratings
TO-220(IXFP)
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MW
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
G
D
S
VGSM
ID25
IDM
IAR
TC = 25°C
3.6
14.4
3.6
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-263(IXFA)
EAR
EAS
TC = 25°C
10
mJ
mJ
G
S
400
D (TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
G = Gate
S = Source
D
= Drain
PD
TC = 25°C
100
W
TAB = Drain
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
-55 to +150
Features
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
300
°C
l International standard packages
l Low RDS (on)
l Rated for unclamped Inductive load
Md
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
Switching (UIS)
Advantages
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
Easy to mount
min.
typ.
max.
l
Space savings
l
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1 mA
800
2.5
V
V
High power density
VGS(th)
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
3.6
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
98746 (09/00)
IXFA 3N80
IXFP 3N80
TO-220(IXFP)Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 20 V; ID = 0.5 ID25, pulse test
2.5
3.4
S
Ciss
Coss
Crss
685
73
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
16
td(on)
tr
td(off)
tf
12
11
25
14
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 12 W (External),
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Qg(on)
Qgs
24
6
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
9
RthJC
RthCK
1.25
K/W
K/W
(TO-220)
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
3.6
14.4
1.5
A
ISM
Repetitive; pulse width limited by TJM
A
V
TO-263(IXFA)Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
250
ns
mC
A
QRM
IRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
0.52
1.8
1. Gate
2. Drain
3. Source
4. Drain
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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IXYS
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