IXFP4N100P [IXYS]
Polar HiPerFET Power MOSFET; 极地HiPerFET功率MOSFET
| 型号： | IXFP4N100P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Polar HiPerFET Power MOSFET |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarTM HiPerFETTM
Power MOSFET
VDSS = 1000V
ID25 = 4A
RDS(on) ≤ 3.3Ω
IXFA4N100P
IXFP4N100P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 AA (IXFA)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
1000
1000
V
V
D (Tab)
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
TO-220AB (IXFP)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
4
8
A
A
IA
TC = 25°C
TC = 25°C
4
A
G
D
D (Tab)
= Drain
S
EAS
200
mJ
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
10
V/ns
W
G = Gate
D
150
S = Source
Tab = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
TL
Tsold
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
300
260
°C
°C
z
International Standard Packages
Low RDS(on) and QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
z
z
z
z
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10.65 / 2.2..14.6
1.13 / 10
Nm/lb.in.
Nm/lb.in.
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
z
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
1000
V
V
3.0
6.0
Applications
±100 nA
z
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
IDSS
10 μA
z
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Notes 1
750 μA
z
z
RDS(on)
3.3
Ω
z
Robotics and Servo Controls
DS99921A(7/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXFA4N100P
IXFP4N100P
Symbol
Test Conditions
Characteristic Values
TO-220 (IXFP) Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
1.8
3.0
1.6
S
RGi
Gate Input Resistance
Ω
Ciss
Coss
Crss
1456
90
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
16
td(on)
tr
td(off)
tf
24
36
37
50
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
Pins: 1 - Gate
2 - Drain
Qg(on)
Qgs
26
9
nC
nC
nC
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
12
RthJC
RthCS
0.83 °C/W
°C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
4
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
TO-263 (IXFA) Outline
1.3
trr
300 ns
IF = 2A, VGS = 0V, -di/dt = 100A/μs
IRM
QRM
5.30
0.34
A
VR = 100V
μC
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463 6,771,478B2 7,071,537
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
IXFA4N100P
IXFP4N100P
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
4
3.5
3
8
7
6
5
4
3
2
1
0
VGS = 10V
VGS = 10V
8V
8V
7V
7V
6V
5V
2.5
2
6V
5V
1.5
1
0.5
0
0
5
10
15
20
25
30
35
0
0
0
1
2
3
4
5
6
7
8
9
10
11
12
28
8
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
4
3.6
3.2
2.8
2.4
2
VGS = 10V
7V
VGS = 10V
I D = 4A
6V
I D = 2A
1.6
1.2
0.8
0.4
0
5V
2
4
6
8
10
12
14
16
18
20
22
24
26
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
4.5
4
VGS = 10V
TJ = 125ºC
3.5
3
2.5
2
1.5
1
TJ = 25ºC
0.5
0
1
2
3
4
5
6
7
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TC - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXFA4N100P
IXFP4N100P
Fig. 7. Input Admittance
Fig. 8. Transconductance
5
4.5
4
5
4.5
4
TJ = - 40ºC
3.5
3
25ºC
3.5
3
TJ = 125ºC
25ºC
- 40ºC
125ºC
2.5
2
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
3.0
0.3
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.1
40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
12
10
8
16
14
12
10
8
VDS = 500V
I
I
D = 2A
G = 10mA
6
6
4
TJ = 125ºC
4
TJ = 25ºC
2
2
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
5
10
15
20
25
30
35
40
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
10,000
1,000
100
1
= 1 MHz
f
C
iss
0.1
C
oss
C
rss
10
0.01
5
10
15
20
25
30
35
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_4N100P(45-744)10-08-08
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Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
IXYS
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