IXFP4N85X [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFP4N85X |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X-Class HiPERFET
Power MOSFET
VDSS = 850V
ID25 = 3.5A
RDS(on) 2.5
IXFY4N85X
IXFA4N85X
IXFP4N85X
N-Channel Enhancement Mode
TO-252 (IXFY)
G
S
Symbol
VDSS
Test Conditions
Maximum Ratings
D (Tab)
TJ = 25C to 150C
850
850
V
V
TO-263 (IXFA)
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
S
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
3.5
A
A
D (Tab)
10.0
TO-220 (IXFP)
IA
TC = 25C
TC = 25C
2
A
EAS
125
mJ
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
V/ns
W
G
D
S
150
D (Tab)
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
G = Gate
D
= Drain
S = Source
Tab = Drain
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220)
10.65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Weight
TO-252
TO-263
TO-220
0.35
2.50
3.00
g
g
g
Low Package Inductance
Advantages
Symbol
Test Conditions
Characteristic Values
High Power Density
Easy to Mount
Space Savings
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
850
V
3.0
5.5
V
Applications
100 nA
A
IDSS
5
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
TJ = 125C
500 A
RDS(on)
VGS = 10V, ID = 2A, Note 1
2.5
Robotics and Servo Controls
DS100768(12/16)
© 2016 IXYS CORPORATION, All Rights Reserved
IXFY4N85X IXFA4N85X
IXFP4N85X
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 2A, Note 1
Gate Input Resistance
1.2
2.0
S
RGi
3
Ciss
Coss
Crss
247
305
5
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
27
60
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
13
27
28
20
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 2A
V
RG = 30 (External)
Qg(on)
Qgs
7.0
2.3
3.3
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
Qgd
RthJC
RthCS
0.83 C/W
C/W
TO-220
0.50
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
4
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
16
1.4
V
trr
QRM
IRM
170
770
9
ns
IF = 2A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFY4N85X IXFA4N85X
IXFP4N85X
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
V
= 10V
V
= 10V
GS
GS
9V
8V
9V
8V
7V
6V
7V
6V
0
1
2
3
4
5
6
7
8
9
10
11
0
4
8
12
16
20
24
28
32
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
9V
GS
V
= 10V
GS
8V
7V
I
= 4A
D
I
= 2A
D
6V
5V
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 2A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
GS
T = 125ºC
J
T = 25ºC
J
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
IXFY4N85X IXFA4N85X
IXFP4N85X
Fig. 7. Input Admittance
Fig. 8. Transconductance
5
4
3
2
1
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
- 40ºC
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS - Volts
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
8
18
16
14
12
10
8
V
= 425V
DS
I
I
= 2A
D
G
= 10mA
6
4
T
J
= 125ºC
6
4
T = 25ºC
J
2
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
1
2
3
4
5
6
7
QG - NanoCoulombs
VSD - Volts
Fig. 12. Output Capacitance Stored Energy
Fig. 11. Capacitance
10000
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
C
iss
oss
rss
C
C
1
= 1 MHz
f
0.1
1
10
100
1000
0
100
200
300
400
500
600
700
800
900
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFY4N85X IXFA4N85X
IXFP4N85X
Fig. 14. Maximum Transient Thermal Impedance
Fig. 13. Forward-Bias Safe Operating Area
1
100
10
R
DS(
on
Limit
)
25µs
100µs
0.1
1
0.1
0.01
1ms
T
= 150ºC
= 25ºC
J
T
C
10ms
Single Pulse
DC
0.01
10
100
1,000
0.00001
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
Pulse Width - Seconds
TO-220 Outline
A
E
oP
A1
TO-263 Outline
A
C2
E
E1
4
H1
Q
TO-252 AA Outline
D2
E1
D
L1
D1
D
D1
L2
H
A1
1
3
2
b
b2
A2
L3
c
EJECTOR
e
e
PIN
0.43 [11.0]
L1
0
L
0.34 [8.7]
0.66 [16.6]
A2
e
c
3X b
e1
3X b2
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.10 [2.5]
0.12 [3.0]
0.06 [1.6]
1 - Gate
2,4 - Drain
3 - Source
1 - Gate
2,4 - Drain
3 - Source
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_4N85X(S2-D901) 12-05-16
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