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IXFP44N25X3 [LITTELFUSE]

Power Field-Effect Transistor,;
IXFP44N25X3
型号： IXFP44N25X3
厂家： LITTELFUSE    LITTELFUSE
描述：

Power Field-Effect Transistor,
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中文：  中文翻译
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Preliminary Technical Information  
X3-Class HiPERFETTM  
Power MOSFET  
IXFA44N25X3  
IXFP44N25X3  
VDSS = 250V  
ID25 = 44A  
RDS(on) 40m  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220 (IXFP)  
TJ = 25C to 150C  
250  
250  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25C  
44  
66  
A
A
TC = 25C, Pulse Width Limited by TJM  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
IA  
TC = 25C  
TC = 25C  
22  
A
EAS  
400  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
240  
Features  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Low RDS(ON) and QG  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Low Package Inductance  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Advantages  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
250  
V
V
2.5  
4.5  
100 nA  
IDSS  
15 A  
TJ = 125C  
500 A  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
31  
40 m  
DS100875B(6/18)  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFA44N25X3  
IXFP44N25X3  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
A
C2  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
E
E1  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
Gate Input Resistance  
22  
36  
S
L1  
L2  
D1  
D
4
H
RGi  
2.1  
A1  
1
3
2
Ciss  
Coss  
Crss  
2200  
405  
1
pF  
pF  
pF  
b
b2  
L3  
c
e
e
0.43 [11.0]  
VGS = 0V, VDS = 25V, f = 1MHz  
0  
0.34 [8.7]  
0.66 [16.6]  
A2  
Effective Output Capacitance  
1 - Gate  
2,4 - Drain  
3 - Source  
0.20 [5.0]  
0.10 [2.5]  
0.12 [3.0]  
0.06 [1.6]  
Co(er)  
Co(tr)  
155  
615  
pF  
pF  
Energy related  
VGS = 0V  
VDS = 0.8 • VDSS  
Time related  
td(on)  
tr  
td(off)  
tf  
18  
23  
54  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 10(External)  
Qg(on)  
Qgs  
33  
9
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
10  
RthJC  
RthCS  
0.52 C/W  
C/W  
TO-220  
0.50  
TO-220 Outline  
Source-Drain Diode  
A
E
oP  
A1  
Symbol  
Test Conditions  
Characteristic Values  
H1  
Q
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
D2  
E1  
D
IS  
VGS = 0V  
44  
A
A
D1  
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.4  
A2  
EJECTOR  
PIN  
L1  
V
L
trr  
QRM  
IRM  
87  
300  
7
ns  
IF = 22A, -di/dt = 100A/μs  
3X b  
e
c
e1  
nC  
3X b2  
VR = 100V  
1 - Gate  
2,4 - Drain  
3 - Source  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXFA44N25X3  
IXFP44N25X3  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
V
= 10V  
V
= 10V  
8V  
GS  
GS  
9V  
8V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 44A  
D
I
= 22A  
D
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
o
T = 125 C  
J
o
V
GS(th)  
T = 25 C  
J
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
TJ - Degrees Centigrade  
ID - Amperes  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXFA44N25X3  
IXFP44N25X3  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
V
= 10V  
DS  
o
T
J
= 125 C  
o
25 C  
o
- 40 C  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 9. Transconductance  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
o
V
= 10V  
T = - 40 C  
DS  
J
o
25 C  
o
125 C  
60  
o
T = 125 C  
J
40  
o
T = 25 C  
J
20  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
10000  
1000  
100  
10  
V
= 125V  
DS  
C
iss  
I
I
= 22A  
D
G
= 10mA  
C
C
oss  
rss  
1
= 1 MHz  
f
0.1  
0
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1000  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  
IXFA44N25X3  
IXFP44N25X3  
Fig. 13. Output Capacitance Stored Energy  
Fig. 14. Forward-Bias Safe Operating Area  
100  
10  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
R
DS(  
on  
Limit  
)
25μs  
100μs  
1
1ms  
o
T = 150 C  
J
0.1  
0.01  
10ms  
DC  
o
T
C
= 25 C  
Single Pulse  
0
25  
50  
75  
100  
125  
150  
175  
200  
225  
250  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_44N25X3(23G-S251) 12-15-17  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  

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