IXFP4N100Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFP4N100Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总4页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
Power MOSFETs
Q-Class
IXFA 4N100Q VDSS
IXFP 4N100Q ID25
=1000 V
4 A
=
RDS(on) = 3.0 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol
TestConditions
MaximumRatings
TO-220 (IXFP)
VDSS
VDGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGS = 1 MW
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
G
D
S
VGSM
ID25
IDM
IAR
TC = 25°C
4
16
4
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-263 (IXFA)
EAR
EAS
TC = 25°C
20
mJ
mJ
G
S
700
D (TAB)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
G = Gate
D
= Drain
PD
TC = 25°C
150
W
S = Source
TAB = Drain
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
-55 to +150
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque(TO-220)
300
°C
Md
1.13/10 Nm/lb.in.
Features
Weight
TO-220
TO-263
4
2
g
g
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Internationalstandardpackages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL94V-0
flammabilityclassification
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1.5 mA
1000
3.0
V
V
VGS(th)
5.0
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50
1
mA
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
3.0
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98705(02/04/00)
1 - 4
IXFA 4N100Q
IXFP 4N100Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-220 AB (IXFP) Outline
VDS = 20 V; ID = 0.5 • ID25, pulse test
1.5
2.5
S
Ciss
Coss
Crss
1050
120
30
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 W (External),
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
39
9
nC
nC
nC
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
22
C
D
9.91 10.66 0.390 0.420
3.54
4.08 0.139 0.161
RthJC
RthCK
0.8
K/W
K/W
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
(TO-220)
0.25
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
J
0.64
1.01 0.025 0.040
K
2.54 BSC 0.100 BSC
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
Symbol
IS
TestConditions
VGS = 0 V
4
16
A
TO-263 AA (IXFA) Outline
ISM
Repetitive; pulse width limited by TJM
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr
250
ns
mC
A
QRM
IRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
0.52
1.8
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160 .190
.080 .110
b
b2
0.51
1.14
0.99
1.40
.020 .039
.045 .055
c
c2
0.46
1.14
0.74
1.40
.018 .029
.045 .055
D
D1
8.64
7.11
9.65
8.13
.340 .380
.280 .320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380 .405
.270 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575 .625
.090 .110
.040 .055
.050 .070
L1
L2
L3
L4
0
.015
R
0.46
0.74
.018 .029
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFA 4N100Q
IXFP 4N100Q
Figure 1. Output Characteristics at 25OC
Figure 2. Extended Output Characteristics at 125OC
6
4
T
= 25°C
V
= 10V
J
GS
V
= 10V
T
= 25°C
GS
J
9V
8V
9V
8V
5
4
3
2
1
0
7V
3
2
1
0
7V
6V
6V
5V
5V
0
4
8
12
16
20
0
2
4
6
8
10
VCE - Volts
VDS - Volts
Figure 4. Admittance Curves
Figure 3. Output characteristics at 125°C
4
4
TJ = 125°C
V
= 10V
GS
9V
8V
3
3
2
1
0
7V
O
T
= 125
C
J
2
1
0
6V
5V
O
T
= 25
C
J
0
5
10
VDS - Volts
15
20
3
4
5
6
7
8
VGS - Volts
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4
2.4
V
= 10V
GS
V
I
= 10V
GS
= 2A
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
D
T
J
= 125°C
T
= 25°C
J
0
1
2
3
4
5
6
25
50
75
100
125
150
TJ - Degrees C
ID - Amperes
© 2000 IXYS All rights reserved
3 - 4
IXFA 4N100Q
IXFP 4N100Q
Figure 8. Capacitance Curves
Figure 7. Gate Charge
2000
15
12
9
Ciss
1000
V
DS = 600 V
ID = 3 A
f = 1MHz
IG = 10 mA
Coss
Crss
100
10
6
3
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
VDS - Volts
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure10. Drain Current vs. Case Temperature
5
4
3
2
1
0
10
8
60
6
TJ = 125OC
4
TJ = 25OC
2
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25 50 75 100 125 150
VSD - Volts
TC - Degrees Centigrade
Figure 11. Transient Thermal Resistance
1.00
0.10
0.01
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4 - 4
相关型号：
IXFP4N60P3
Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
IXYS
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