IXFX44N80Q3 [IXYS]
MOSFET N-CH 800V 44A PLUS247;
| 型号： | IXFX44N80Q3 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | MOSFET N-CH 800V 44A PLUS247 |
| 文件： | 总7页 (文件大小：1962K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Q3-Class
VDSS = 800V
ID25 = 44A
RDS(on) 190m
IXFK44N80Q3
IXFX44N80Q3
HiperFETTM
Power MOSFET
D
S
trr
300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G
TO-264
(IXFK)
G
D
S
Symbol
VDSS
Test Conditions
Maximum Ratings
Tab
TJ = 25C to 150C
800
800
V
V
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
PLUS247
(IXFX)
ID25
IDM
TC = 25C
44
A
A
TC = 25C, Pulse Width Limited by TJM
130
IA
EAS
TC = 25C
TC = 25C
44
3.5
A
J
G
D
Tab
S
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
50
V/ns
W
G = Gate
S = Source
D
= Drain
1250
Tab = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Avalanche Rated
M
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
FCd
Weight
TO-264
PLUS247
10
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
800
3.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
6.5
Applications
200 nA
IDSS
50 A
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
TJ = 125C
2.5 mA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
190 m
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS100359C(1/20)
© 2020 IXYS CORPORATION, All Rights Reserved
IXFK44N80Q3
IXFX44N80Q3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
22
37
S
Ciss
Coss
Crss
10950
957
pF
pF
pF
95
RGi
0.20
45
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
tr
60
63
ns
ns
td(off)
tf
20
ns
Qg(on)
Qgs
185
67
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
83
RthJC
RthCS
0.10C/W
C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
44
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
176
1.4
trr
QRM
IRM
300 ns
C
IF = 22A, -di/dt = 100A/s
1.8
13.4
VR = 100V, VGS = 0V
A
Note
1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFK44N80Q3
IXFX44N80Q3
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
45
40
35
30
25
20
15
10
5
110
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
9V
GS
V
= 10V
9V
GS
8V
8V
7V
6V
7V
6V
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
45
40
35
30
25
20
15
10
5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
9V
GS
V
= 10V
GS
I
= 44A
D
8V
I = 22A
D
7V
6V
0
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.
Drain Current
50
45
40
35
30
25
20
15
10
5
3.0
2.6
2.2
1.8
1.4
1.0
0.6
V
= 10V
GS
T = 125oC
J
T = 25oC
J
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
ID - Amperes
TC - Degrees Centigrade
© 2020 IXYS CORPORATION, All Rights Reserved
IXFK44N80Q3
IXFX44N80Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
70
60
50
40
30
20
10
0
= - 40oC
60
50
40
30
20
10
0
T
J
T
J
= 125oC
25oC
25oC
- 40oC
125oC
4.0
0.3
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
1.2
40
0
10
20
30
40
50
60
70
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
Fig. 10. Gate Charge
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
V
= 400V
DS
I
I
= 22A
D
G
= 10mA
60
T
= 125oC
J
40
T
J
= 25oC
20
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
40
80
120
160
200
240
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100
10
100,000
10,000
1,000
100
= 1 MHz
f
R
Limit
DS(on)
C
iss
25µs
100µs
C
C
oss
1
T
J
= 150oC
= 25oC
1ms
rss
T
C
Single Pulse
10
0.1
5
10
15
20
25
30
35
10
100
1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK44N80Q3
IXFX44N80Q3
Fig. 13. Maximum Transient Thermal Impedance
aaaaa
0.2
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2020 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_44N80Q3(Q8-R88)10-10-12
IXFK44N80Q3
IXFX44N80Q3
TO-264 Outline
D
B
E
A
Q
S
0R
D
Q1
0R1
L1
1
2
3
C
L
A1
M
C A
M
J
b1
b
c
b2
e
1 = Gate
2,4 = Drain
3 = Source
0P1
BACK SIDE
A
M
M
K
D
B
0P
4
PLUS247TM Outline
A
E
E1
Q
A2
D2
R
D
4
1
2
3
L1
L
b
e
A1
3 PLCS
b2
C
2 PLCS
2 PLCS
b4
1 = Gate
2,4 = Drain
3 = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK44N80Q3
IXFX44N80Q3
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
© 2020 IXYS CORPORATION, All Rights Reserved
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