IXTA4N80P [IXYS]
PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated; PolarHV功率MOSFET N沟道增强型额定雪崩
| 型号： | IXTA4N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated |
| 文件： | 总4页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
PolarHVTM
Power MOSFET
VDSS = 800
ID25 = 3.6
RDS(on) ≤ 3.4
V
A
Ω
IXTA4N80P
IXTP4N80P
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
TO-263 (IXTA)
800
V
800
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
G
S
(TAB)
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
3.6
8
A
A
TO-220 (IXTP)
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
2
20
250
A
mJ
mJ
(TAB)
G
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 18 Ω
,
10
V/ns
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
TC = 25°C
100
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
Md
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
TO-263
4
3
g
g
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 100μA
VGS = ±30 V, VDS = 0 V
800
V
V
Advantages
3.0
5.5
z
Easy to mount
±100
nA
z
Space savings
z
IDSS
VDS = VDSS
VGS = 0 V
5
μA
μA
High power density
TJ = 125°C
150
RDS(on)
VGS = 10 V, ID = 0.5 ID25
3.4
Ω
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99596E(08/06)
© 2006 IXYS CORPORATION All rights reserved
IXTA4N80P
IXTP4N80P
TO-263 (IXTA) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
2.5
4.0
S
Ciss
Coss
Crss
750
70
pF
pF
pF
6.3
td(on)
tr
td(off)
tf
22
24
60
29
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 18 Ω (External)
Qg(on)
Qgs
14.2
4.8
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
4.8
RthJC
RthCS
1.25 °C/W
°C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VGS = 0 V
3.5
A
A
ISM
Repetitive
8
VSD
trr
IF = IS, VGS = 0 V
1.5
V
IF = 3.5 A, -di/dt = 100 A/μs,
560
ns
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXTA4N80P
IXTP4N80P
Fig. 2. Output Characteristics
@ 125ºC
Fig. 1. Extended Output Characteristics
@ 25ºC
6
5
4
3
2
1
0
3.5
3
V
= 10V
7V
GS
V
= 10V
8V
GS
2.5
2
7V
6V
1.5
1
6V
0.5
0
5V
0
5
10
15
20
25
30
150
150
0
0
4
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 2A Value
vs. Drain Current
Fig. 3. RDS(on) Normalized to ID = 2A Value
vs. Junction Temperature
2.6
2.4
2.2
2
3
2.8
2.6
2.4
2.2
2
V
= 10V
GS
V
= 10V
T = 125ºC
J
GS
1.8
1.6
1.4
1.2
1
1.8
1.6
1.4
1.2
1
I
= 3.6A
D
I
= 1.8A
D
T
J
= 25ºC
0.8
0.6
0.4
0.8
-50
-25
0
25
50
75
100
125
1
2
3
4
5
6
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
4
3.5
3
4
3.5
3
2.5
2
2.5
2
T
J
= 125ºC
25ºC
-40ºC
1.5
1
1.5
1
0.5
0
0.5
0
-50
-25
0
25
50
75
100
125
4.5
5
5.5
6
6.5
7
TC - Degrees Centigrade
VGS - Volts
© 2006 IXYS CORPORATION All rights reserved
IXTA4N80P
IXTP4N80P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
7
6
5
4
3
2
1
0
12
11
10
9
T
= - 40ºC
J
8
T
J
= 25ºC
7
6
T
J
= 125ºC
5
T
J
= 125ºC
4
3
T
J
= 25ºC
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0.4
0.5
0.6
0.7
0.8
0.9
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
9
8
7
6
5
4
3
2
1
0
10,000
1,000
100
10
f = 1 MHz
V
= 400V
DS
I
I
= 1.8A
D
G
C
iss
= 10mA
C
C
oss
rss
1
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
Fig. 11. Maximum Transient Thermal Impedance
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: T_4N80P (3J) 10-23-06.xls
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