IXTA50N20P [IXYS]
PolarHT Power MOSFET N-Channel Enhancement Mode; PolarHT功率MOSFET N沟道增强模式
| 型号： | IXTA50N20P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT Power MOSFET N-Channel Enhancement Mode |
| 文件： | 总5页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM
Power MOSFET
IXTQ 50N20P
IXTA 50N20P
IXTP 50N20P
VDSS = 200 V
ID25 = 50 A
RDS(on) = 60 mΩ
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-3P(IXTQ)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 175°C
200
200
V
V
G
D
TJJ = 25°C to 175°C; RGS = 1 MΩ
(TAB)
S
VGSM
20
V
TO-220 (IXTP)
ID25
IDM
T
= 25°C
50
A
A
TCC = 25°C, pulse width limited by TJM
TC = 25°C
120
IAR
50
A
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
(TAB)
G
D
S
1.0
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 10 Ω
,
10
V/ns
TO-263 (IXTA)
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +125
°C
°C
°C
G
S
(TAB)
TL
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
300
260
°C
°C
G = Gate
D = Drain
TAB = Drain
S = Source
Features
Md
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Weight
TO-3P
TO-220
TO-263
5.5
4
3
g
g
g
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Advantages
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
200
V
V
z
Easy to mount
z
2.5
5.0
Space savings
z
High power density
100
nA
PolarHTTM DMOStransistors
utilize proprietary designs and
process. US patent is pending.
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
TJ = 150°C
RDS(on)
VGS = 10 V, ID = IT
50
60 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DS99156A(04/04)
© 2004 IXYS All rights reserved
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Symbol
gfs
TestConditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 50 A pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
12
23
S
Ciss
Coss
Crss
2250
500
pF
pF
pF
125
td(on)
tr
td(off)
tf
26
35
70
30
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 10 Ω (External)
Qg(on)
Qgs
70
17
37
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
RthCK
0.42 K/W
(TO-3P)
(TO-220)
0.21
0.25
K/W
K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
Min.
typ.
Max.
VGS = 0 V
50
A
A
V
ISM
Repetitive
120
1.5
TO-220 (IXTA) Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
180
2.0
ns
QRM
µC
Notes: Test current IT = 50 A.
TO-263 (IXTP) Outline
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
Pins: 1 - Gate
2 - Drain
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
ofthefollowingU.S.patents:
4,835,592
4,881,106
5,017,508
5,049,961
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig. 1. Output Characte ris tics
@ 25ºC
Fig. 2. Exte nde d Output Characte ris tics
@ 25ºC
50
45
40
35
30
25
20
15
10
5
100
90
80
70
60
50
40
30
20
10
0
V
= 10V
GS
V
= 10V
GS
9V
8V
9V
8V
7V
6V
7V
6V
0
0
0.5
1
1.5
2
2.5
3
3.5
0
2
4
6
8
10
12
14
16 18
20
VD S - Volts
V D S - V olts
Fig. 4. RDS(on Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe rature
Fig. 3. Output Characte ris tics
@ 150ºC
)
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
50
45
40
35
30
25
20
15
10
5
V
= 10V
9V
GS
V
= 10V
GS
I
= 50A
D
8V
I
= 25A
D
7V
6V
5V
0.7
0.4
0
-50 -25
0
25
50
75
100 125 150 175
0
1
2
3
4
5
6
7
8
TJ - Degrees Centigrade
V D S - V olts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 V alue vs . ID
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
55
50
45
40
35
30
25
20
15
10
5
4.2
3.8
3.4
3
V
= 10V
GS
T
= 175ºC
J
2.6
2.2
1.8
1.4
1
T
= 125ºC
J
T
= 25ºC
J
0.6
0
0
10
20
30
40
50
60
70
80
90 100
-50 -25
0
25
50
75
100 125 150 175
I D - A mperes
TC - Degrees Centigrade
© 2004 IXYS All rights reserved
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
90
80
70
60
50
40
30
20
10
0
36
32
28
24
20
16
12
8
T
= -40ºC
25ºC
150ºC
J
T
= 150ºC
25ºC
-40ºC
J
4
0
5
6
7
8
9
10
0
20
40
60
80
100
120
VG S - V olts
I D - A mperes
Fig. 9. Source Curre nt vs .
Source -To-Drain V oltage
Fig. 10. Gate Charge
10
9
150
125
100
75
V
= 100V
DS
I
I
= 25A
8
D
G
= 10m A
7
6
5
4
50
3
T
= 150ºC
J
2
25
T = 25ºC
J
1
0
0
0
10
20
Q
30
40
50
60
70
0.4
0.6
0.8
1
1.2
1.4
- nanoCoulombs
VS D - V olts
G
Fig. 12. Forw ard-Bias
Safe Ope rating Are a
Fig. 11. Capacitance
1000
100
10
10000
1000
100
f = 1MHz
T
= 175ºC
= 25ºC
J
R
Lim it
DS(on)
T
C
C
C
iss
25µs
100µs
1m s
oss
10m s
D C
C
rss
1
0
5
10
15
20
25
30
35
40
10
100
V D S - V olts
1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1 6,162,665
6,534,343
6,583,505
ofthefollowingU.S.patents:
4,835,592
4,881,106
5,017,508
5,049,961
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
10
100
1000
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
相关型号：
IXTA52P10P
Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
IXYS
IXTA5N60P
Power Field-Effect Transistor, 5A I(D), 600V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明